Annealing behavior of carbon‐oxygen complexes in silicon crystals observed by low‐temperature infrared absorption

1995 ◽  
Vol 77 (1) ◽  
pp. 41-46 ◽  
Author(s):  
Yoshimi Shirakawa ◽  
Hiroshi Yamada‐Kaneta ◽  
Haruhisa Mori
Keyword(s):  
Low Temperature ◽  
Infrared Absorption ◽  
Annealing Behavior ◽  
Silicon Crystals ◽  
Oxygen Complexes

scholarly journals Оптические свойства и механизм образования вакансионно-кислородных комплексов V-=SUB=-2-=/SUB=-O-=SUB=-2-=/SUB=- и V-=SUB=-3-=/SUB=-O-=SUB=-2-=/SUB=- в облученных кристаллах кремния

2018 ◽  
Vol 52 (9) ◽  
pp. 973
Author(s):  
Е.А. Толкачева ◽  
В.П. Маркевич ◽  
Л.И. Мурин
Keyword(s):  
Infrared Absorption ◽  
Vibrational Modes ◽  
Fourier Spectroscopy ◽  
Absorption Bands ◽  
Fast Electrons ◽  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Local Vibrational Modes ◽  
Oxygen Complexes

AbstractThe processes of the formation and annealing of V_ n O_ m ( n , m ≥ 2) vacancy–oxygen complexes in Czochralski silicon crystals irradiated with fast electrons and reactor neutrons have been studied by infrared absorption Fourier spectroscopy. A number of arguments are presented in favor of identification of absorption bands at 829.3 and 844.2 cm^–1 as being related to local vibrational modes of V_2O_2 and V_3O_2 complexes, respectively.

Oxygen Precipitation in Conventional and Nitrogen Co-Doped Heavily Arsenic-Doped Czochralski Silicon Crystals: Oswald Ripening

2009 ◽  
Vol 156-158 ◽  
pp. 275-278
Author(s):  
Xiang Yang Ma ◽  
Yan Feng ◽  
Yu Heng Zeng ◽  
De Ren Yang
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Oxygen Precipitation ◽  
High Temperature Anneal ◽  
Oxygen Precipitates ◽  
Co Doped ◽  
Oswald Ripening

Oxygen precipitation (OP) behaviors in conventional and nitrogen co-doped heavily arsenic-doped Czocharalski silicon crystals subjected to low-high two-step anneals of 650 oC/8 h + 1000 oC/4-256 h have been comparatively investigated. Due to the nitrogen enhanced nucleation of OP during the low temperature anneal, much higher density of oxygen precipitates generated in the nitrogen co-doped specimens. With the extension of high temperature anneal, Oswald ripening of OP in the nitrogen co-doped specimens preceded that in the conventional ones. Moreover, due to the Oswald ripening effect, the oxygen precipitates in the conventional specimens became larger with a wider range of sizes. While, the sizes of oxygen precipitates in the nitrogen co-doped specimens distributed in a much narrower range with respect to the conventional ones.

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