Strain relaxation of GaN nucleation layers during rapid thermal annealing

2001 ◽  
Vol 78 (17) ◽  
pp. 2443-2445 ◽  
Author(s):  
M. S. Yi ◽  
D. Y. Noh
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Strain Relaxation

Effects of Rapid Thermal Annealing on W/Si1−xGex Contacts

1993 ◽  
Vol 320 ◽  
Author(s):  
V. Aubry ◽  
F. Meyer ◽  
R. Laval ◽  
C. Clerc ◽  
P. Warren ◽  
...  
Keyword(s):  
Barrier Height ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Strain Relaxation ◽  
Chemical Vapor ◽  
Thermal Reaction ◽  
Reaction Products ◽  
X Ray Diffraction ◽  
Parasitic Effect ◽  
Strained Films

ABSTRACTThermal reaction of W with Si1−xGex films epitaxially grown by Rapid Thermal Chemical Vapor Deposition was investigated in the temperature range 500°C - 1000°C. The samples were annealed either in a Rapid Thermal Annealing (RTA) system or in a conventional furnace, both in flowing nitrogen. The reaction products were investigated by Rutherford Backscattering Spectroscopy (RBS), Energy Dispersive Spectrometry (EDS) and X-ray diffraction (XRD). Sheet resistance measurements were also performed to follow the progress of the reaction. The reaction of W with Si0.67Ge0.33 is similar to that of W with silicon. W reacts with silicon to form tetragonal WSi2. The Ge-content in the silicide is lower than that of the asdeposited alloy. It is shown that an oxygen contamination occurs during conventional annealing and leads to the formation of non homogeneous Si1−x Gex unreacted alloy below the silicide film. Rapid thermal annealing prevents this parasitic effect and the unreacted film remains homogeneous although a slight decrease in the Ge-content is observed. These results are correlated with Schottky barrier height measurements on p-Si0.83Ge0.17 partially strained films. We observed an increase of the barrier height with increasing the temperature for annealing from 500°C to 1000°C. This trend may be explained either by strain relaxation or (and) Ge-content decrease in the unreacted alloy.

Effect of rapid thermal annealing on the strain relaxation in heavily boron doped silicon epitaxial layer

1995 ◽  
Vol 77 (7) ◽  
pp. 2974-2977 ◽  
Author(s):  
Jiangbao Wang ◽  
Qiang Xu ◽  
Jian Yuan ◽  
Fang Lu ◽  
Henghui Sun ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Epitaxial Layer ◽  
Strain Relaxation ◽  
Boron Doped ◽  
Doped Silicon ◽  
Silicon Epitaxial Layer

Steady-State Versus Rapid Thermal Annealing of Phosphorusimplanted Pseudomorphic Si(100)/Ge0.12Si0.88

1994 ◽  
Vol 342 ◽  
Author(s):  
D. Y. C. Lie ◽  
J. H. Song ◽  
N. D. Theodore ◽  
F. Eisen ◽  
M.-A. Nicolet ◽  
...  
Keyword(s):  
Steady State ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Room Temperature ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Furnace Annealing ◽  
Dopant Activation ◽  
X Ray ◽  
Projected Range

ABSTRACTPseudomorphic Ge0.12Si0.88 films 265 nm thick grown by molecular beam epitaxy on p- Si(100) substrates were implanted with 100 keV 31P at room temperature for a dose of 5 x 1013/cm2. The projected range of the implanted P is about half the epilayer thickness. The implanted layers, together with non-implanted virgin samples, were subsequently annealed by both rapid thermal annealing in nitrogen and by steady-state furnace annealing in vacuum. The damage and strain of the annealed layers were studied by 4He channeling and x-ray doublecrystal diffraction. For a dose of 5 x 1013 P /cm2, both the damage and strain introduced by implantation can be completely removed, within instrumental sensitivity, by rapid thermal annealing at 700 °C for 10 - 40 s. Furnace annealing at 550 °C for 30 min for this sample removes most of the damage and strain induced by implantation. Furnace annealing at 700 °C or higher worsens the crystallinity of the layer and the strain relaxes. Hall measurements were performed on the same samples. Furnace annealing cannot achieve good dopant activation without introducing significant strain relaxation to the heterostructure, while rapid thermal annealing can.

Solid-Phase Epitaxial Regrowth and Dopant Activation of Arsenic. Implanted Metastable Pseudomorphic Ge0.08Si0.92 AND GeO.16SiO.84 ON Si(100)

1995 ◽  
Vol 379 ◽  
Author(s):  
D.Y.C. Lie ◽  
J.H. Song ◽  
M.-A. Nicolet ◽  
N.D. Theodore ◽  
J. Candelaria ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Room Temperature ◽  
Solid Phase ◽  
Strain Relaxation ◽  
Chemical Vapor ◽  
Layer By Layer ◽  
Solid Phase Epitaxy ◽  
Epitaxial Regrowth ◽  
Control Samples

ABSTRACTMetastable pseudomorphic GexSi1−x (x=8%,16%) films were deposited on p-Si(100) substrates by chemical-vapor-deposition and then implanted at room temperature with 90 keV arsenic ions to a dose of 1.5×1015/cm2. The implantation amorphizes approximately the top 125 nm of the 145 nm-thick GeSi layers. The Si-GeSi interfaces remain sharp after implantation. Implanted and non-implanted GeSi samples, together with implanted Si control samples, were subsequently annealed simultaneously by rapid thermal annealing in a nitrogen ambient at 600,700,800 × for 10,20,40s at each temperature. The implanted samples undergo layer-by-layer solid-phase epitaxial regrowth during annealing at or above 600 ×C. The amorphized and regrown GeSi layers are always fully relaxed with a very high density of dislocations (1010-1011/cm2). At a fixed annealing temperature, strain relaxation of an implanted GeSi film is substantially more extensive than that of a non-implanted one. About 50-90% of the implanted arsenic ions become electrically active after the completion of solid-phase epitaxy. The percentages of arsenic ions that are activated in the Si control samples are generally higher than those in GeSi. The room-temperature sheet electron mobility in GeSi is roughly 30% lower than that in Si for a given sheet electron concentration. We conclude that metastable GeSi on Si(100) amorphized by arsenic ions and recrystallized by solid-phase epitaxy cannot recover both its crystallinity and its pseudomorphic strain under rapid thermal annealing.

Strain relaxation and dopant distribution in the rapid thermal annealing of Co with Si/Si1−xGex/Si heterostructure

1998 ◽  
Vol 1 (3-4) ◽  
pp. 257-261 ◽  
Author(s):  
Y Miron ◽  
M Efrati Fastow ◽  
C Cytermann ◽  
R Brener ◽  
M Eizenberg ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Strain Relaxation ◽  
Dopant Distribution

L10 Ordering of FePt Thin Films by Rapid Thermal Annealing

2003 ◽  
Vol 27 (11) ◽  
pp. 1083-1086 ◽  
Author(s):  
H. Ito ◽  
T. Kusunoki ◽  
H. Saito ◽  
S. Ishio
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Fept Thin Films

Effect of a Ti-capped and Ti-mediated Layer on Co Silicide Formation

2002 ◽  
Vol 716 ◽  
Author(s):  
G.Z. Pan ◽  
E.W. Chang ◽  
Y. Rahmat-Samii
Keyword(s):  
Electron Diffraction ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Diffusion Barrier ◽  
Silicide Formation ◽  
Plan View ◽  
Processing Window

AbstractWe comparatively studied the formation of ultra thin Co silicides, Co2Si, CoSi and CoSi2, with/without a Ti-capped and Ti-mediated layer by using rapid thermal annealing in a N2 ambient. Four-point-probe sheet resistance measurements and plan-view electron diffraction were used to characterize the silicides as well as the epitaxial characteristics of CoSi2 with Si. We found that the formation of the Co silicides and their existing duration are strongly influenced by the presence of a Ti-capped and Ti-mediated layer. A Ti-capped layer promotes significantly CoSi formation but suppresses Co2Si, and delays CoSi2, which advantageously increases the silicidation-processing window. A Ti-mediated layer acting as a diffusion barrier to the supply of Co suppresses the formation of both Co2Si and CoSi but energetically favors directly forming CoSi2. Plan-view electron diffraction studies indicated that both a Ti-capped and Ti-mediated layer could be used to form ultra thin epitaxial CoSi2 silicide.

Effect of rapid thermal annealing on sprayed Cu2SnS3 thin films for solar-cell application

2020 ◽  
Vol 59 (10) ◽  
pp. 105503
Author(s):  
Wafaa Magdy ◽  
Ayaka Kanai ◽  
F. A. Mahmoud ◽  
E. T. El Shenawy ◽  
S. A. Khairy ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solar Cell Application
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