scholarly journals Anisotropic structural and optical properties of a-plane (112¯0) AlInN nearly-lattice-matched to GaN

2011 ◽  
Vol 98 (18) ◽  
pp. 181108 ◽  
Author(s):  
Masihhur R. Laskar ◽  
Tapas Ganguli ◽  
A. A. Rahman ◽  
Ashish Arora ◽  
Nirupam Hatui ◽  
...  
Keyword(s):  
Optical Properties ◽  
Structural And Optical Properties ◽  
Lattice Matched

Direct nano-scale correlation of structural and optical properties of lattice matched AlInN/AlGaN DBRs using helium temperature scanning transmission electron microscopy cathodoluminescence

2012 ◽  
Vol 18 (S2) ◽  
pp. 1874-1875 ◽  
Author(s):  
F. Bertram ◽  
J. Christen ◽  
G. Schmidt ◽  
P. Veit ◽  
C. Berger ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Optical Properties ◽  
Scanning Transmission Electron Microscopy ◽  
Helium Temperature ◽  
Structural And Optical Properties ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Temperature Scanning ◽  
Lattice Matched

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

Structural and optical properties of MOCVD InAlN epilayers

2005 ◽  
Vol 892 ◽  
Author(s):  
S. Hernández ◽  
K. Wang ◽  
D. Amabile ◽  
E. Nogales ◽  
D. Pastor ◽  
...  
Keyword(s):  
Optical Properties ◽  
Composition Range ◽  
Theoretical Calculations ◽  
Stokes Shift ◽  
Linear Increase ◽  
Defect Structures ◽  
Frequency Range ◽  
Structural And Optical Properties ◽  
Mode Behavior ◽  
Lattice Matched

AbstractWe have studied the structural and optical properties of InAlN alloys with compositions nearly lattice-matched to GaN. Scanning electron microscopy measurements reveals a good overall surface quality, with some defect structures distributed across the surface whose density increases with the InN concentration. On the other hand, Raman scattering experiments show three peaks in the frequency range between 500 and 900 cm-1, which have been assigned to InN-like and AlN-like E2 modes and A1(LO) mode of the InAlN. These results agree with theoretical calculations previously reported where two-mode and one-mode behavior was predicted for the E and A(LO) modes, respectively. Photoluminescence and photoluminescence excitation allowed us to determine the emission and absorption energies of the InAlN epilayers. Both energies display a redshift as the InN fraction increases. We find a roughly linear increase of the Stokes shift with InN fraction, with Stokes shift values of ≈0.5 eV in the composition range close to the lattice-matched condition.

Structural and Optical Properties of Cu2ZnSn(SxSe1–x)4 Thin Films

2018 ◽  
Vol 23 (3) ◽  
pp. 230-239
Author(s):  
E.P. Zaretskaya ◽  
◽  
V.F. Gremenok ◽  
A.V. Stanchik ◽  
A.N. Pyatlitski ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Structural And Optical Properties

Structural and optical properties of Tin Oxide and Indium doped SnO2 thin films deposited by thermal evaporation technique

2016 ◽  
Vol 12 (3) ◽  
pp. 4394-4399
Author(s):  
Sura Ali Noaman ◽  
Rashid Owaid Kadhim ◽  
Saleem Azara Hussain
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Tin Oxide ◽  
Thermal Evaporation ◽  
Pure Sno2 ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Evaporation Technique ◽  
Sno2 Thin Films

Tin Oxide and Indium doped Tin Oxide (SnO2:In) thin films were deposited on glass and Silicon  substrates  by  thermal evaporation technique.  X-ray diffraction pattern of  pure SnO2 and SnO2:In thin films annealed at 650oC and the results showed  that the structure have tetragonal phase with preferred orientation in (110) plane. AFM studies showed an inhibition of grain growth with increase in indium concentration. SEM studies of pure  SnO2 and  Indium doped tin oxide (SnO2:In) ) thin films showed that the films with regular distribution of particles and they have spherical shape.  Optical properties such as  Transmission , optical band-gap have been measured and calculated.

Sign in / Sign up

Export Citation Format

Share Document