Structural and optical properties of lattice-matched ZnBeSe layers grown by molecular-beam epitaxy onto GaAs substrates

1997 ◽  
Vol 70 (26) ◽  
pp. 3564-3566 ◽  
Author(s):  
V. Bousquet ◽  
E. Tournié ◽  
M. Laügt ◽  
P. Vennéguès ◽  
J. P. Faurie
Vacuum ◽  
2006 ◽  
Vol 80 (9) ◽  
pp. 1042-1045 ◽  
Author(s):  
O. Maksimov ◽  
Y. Gong ◽  
H. Du ◽  
P. Fisher ◽  
M. Skowronski ◽  
...  

2012 ◽  
Vol 20 (4) ◽  
Author(s):  
I. Izhnin ◽  
A. Izhnin ◽  
H. Savytskyy ◽  
O. Fitsych ◽  
N. Mikhailov ◽  
...  

AbstractThe Hall effect and photoluminescence measurements combined with annealing and/or ion milling were used to study the electrical and optical properties of HgCdTe films grown by molecular-beam epitaxy on GaAs substrates with ZnTe and CdTe buffer layers. Unintentional donor doping, likely from the substrate, which resulted in residual donor concentration of the order of 1015 cm−3, was observed in the films. Also, acceptor states, possibly related to structural defects, were observed.


2017 ◽  
Vol 51 (2) ◽  
pp. 267-271 ◽  
Author(s):  
N. V. Kryzhanovskaya ◽  
Yu. S. Polubavkina ◽  
V. N. Nevedomskiy ◽  
E. V. Nikitina ◽  
A. A. Lazarenko ◽  
...  

2018 ◽  
Vol 26 (18) ◽  
pp. 23031 ◽  
Author(s):  
David Arto Laleyan ◽  
Kelsey Mengle ◽  
Songrui Zhao ◽  
Yongjie Wang ◽  
Emmanouil Kioupakis ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document