Structural and optical properties of GaAlInAs lattice matched to InP grown by low‐pressure metalorganic vapor phase epitaxy

1988 ◽  
Vol 53 (4) ◽  
pp. 276-278 ◽  
Author(s):  
J. I. Davies ◽  
A. C. Marshall ◽  
M. D. Scott ◽  
R. J. M. Griffiths
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Structural And Optical Properties ◽  
Lattice Matched

Optical properties of very narrow GaInAs/InP quantum wells grown by low‐pressure metalorganic vapor phase epitaxy

1988 ◽  
Vol 52 (11) ◽  
pp. 872-873 ◽  
Author(s):  
D. Grützmacher ◽  
K. Wolter ◽  
H. Jürgensen ◽  
P. Balk ◽  
C. W. T. Bulle Lieuwma
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

TEM investigation of lattice-matched In0.53Ga0.47 as layers grown on InP by low-pressure metalorganic vapor-phase epitaxy

1990 ◽  
Vol 48 (4) ◽  
pp. 674-675
Author(s):  
C.M. Sung ◽  
KJ. Ostreicher ◽  
M. Abdalla ◽  
D.G. Kenneson ◽  
W. Powazinik ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Communication Systems ◽  
High Mobility ◽  
Lattice Misfit ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Cross Sectional ◽  
Efficient Operation ◽  
Lattice Matched

High-quality defect-free In0.53Ga0.47 As thin film layers lattice matched to InP are important materials for the efficient operation of many optoelectronic devices used in long wavelength communication systems. The presence of defects in these devices is known to have a marked effect on their performance and long-term reliability. The In0.53Ga0.47 As layers reported here were grown by a low-pressure metalorganic vapor phase epitaxy method using tertiarybutylarsine as the As precursor; the layers were found to have high mobility and low background carrier concentrations. The aim of the present work is to investigate the microstructure, ordering, and degree of lattice misfit between the epitaxial In0.53Ga0.47 As layer and the InP using cross-sectional TEM (XTEM) and convergent beam electron diffraction (CBED) methods.A bright-field TEM image (Philips EM400T, 120 keV) taken in the cross-sectional view shows the In0.53Ga0.47As layer, a thin InP buffer layer (≈0.05μm), and the InP (Fe-doped) substrate (Figure 1). The dark cluster-like regions in the InP substrate are Fe-rich (confirmed by EDX).

Structural and optical properties of AlInN and AlGaInN on GaN grown by metalorganic vapor phase epitaxy

1998 ◽  
Vol 195 (1-4) ◽  
pp. 309-313 ◽  
Author(s):  
Shigeo Yamaguchi ◽  
Michihiko Kariya ◽  
Shugo Nitta ◽  
Hisaki Kato ◽  
Tetsuya Takeuchi ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Structural And Optical Properties

The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metalorganic Vapor Phase Epitaxy

2000 ◽  
Vol 39 (Part 1, No. 4B) ◽  
pp. 2385-2388 ◽  
Author(s):  
Shigeo Yamaguchi ◽  
Michihiko Kariya ◽  
Shugo Nitta ◽  
Hiroshi Amano ◽  
Isamu Akasaki
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Structural And Optical Properties ◽  
In Doping

Electronic and optical properties of periodically Si δ-doped InP grown by low pressure metalorganic vapor phase epitaxy

1997 ◽  
Vol 82 (4) ◽  
pp. 1700-1705 ◽  
Author(s):  
P. L. Souza ◽  
B. Yavich ◽  
M. Pamplona-Pires ◽  
A. B. Henriques ◽  
L. C. D. Gonçalves
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Electronic And Optical Properties
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