Influence of interface quality on structural and optical properties of GaxIn1−xAs/AlyIn1−yAs superlattices lattice matched to (001) InP

1989 ◽  
Vol 66 (7) ◽  
pp. 3217-3219 ◽  
Author(s):  
L. Tapfer ◽  
W. Stolz ◽  
K. Ploog
Keyword(s):  
Optical Properties ◽  
Structural And Optical Properties ◽  
Interface Quality ◽  
Lattice Matched

scholarly journals Comparison Study of Structural and Optical Properties of InxGa1−xN/GaN Quantum Wells with Different In Compositions

2000 ◽  
Vol 5 (S1) ◽  
pp. 977-983
Author(s):  
Yong-Hwan Kwon ◽  
G. H. Gainer ◽  
S. Bidnyk ◽  
Y. H. Cho ◽  
J. J. Song ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Chemical Vapor ◽  
Multiple Quantum ◽  
Nonradiative Recombination ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Recombination Rates ◽  
Satellite Peak ◽  
Interface Quality

The effect of In on the structural and optical properties of InxGa1−xN/GaN multiple quantum wells (MQWs) was investigated. These were five-period MQWs grown on sapphire by metalorganic chemical vapor deposition. Increasing the In composition caused broadening of the high-resolution x-ray diffraction superlattice satellite peak and the photoluminescence-excitation bandedge. This indicates that the higher In content degrades the interface quality because of nonuniform In incorporation into the GaN layer. However, the samples with higher In compositions have lower room temperature (RT) stimulated (SE) threshold densities and lower nonradiative recombination rates. The lower RT SE threshold densities of the higher In samples show that the suppression of nonradiative recombination by In overcomes the drawback of greater interface imperfection.

Direct nano-scale correlation of structural and optical properties of lattice matched AlInN/AlGaN DBRs using helium temperature scanning transmission electron microscopy cathodoluminescence

2012 ◽  
Vol 18 (S2) ◽  
pp. 1874-1875 ◽  
Author(s):  
F. Bertram ◽  
J. Christen ◽  
G. Schmidt ◽  
P. Veit ◽  
C. Berger ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Optical Properties ◽  
Scanning Transmission Electron Microscopy ◽  
Helium Temperature ◽  
Structural And Optical Properties ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Temperature Scanning ◽  
Lattice Matched

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

Structural and optical properties of MOCVD InAlN epilayers

2005 ◽  
Vol 892 ◽  
Author(s):  
S. Hernández ◽  
K. Wang ◽  
D. Amabile ◽  
E. Nogales ◽  
D. Pastor ◽  
...  
Keyword(s):  
Optical Properties ◽  
Composition Range ◽  
Theoretical Calculations ◽  
Stokes Shift ◽  
Linear Increase ◽  
Defect Structures ◽  
Frequency Range ◽  
Structural And Optical Properties ◽  
Mode Behavior ◽  
Lattice Matched

AbstractWe have studied the structural and optical properties of InAlN alloys with compositions nearly lattice-matched to GaN. Scanning electron microscopy measurements reveals a good overall surface quality, with some defect structures distributed across the surface whose density increases with the InN concentration. On the other hand, Raman scattering experiments show three peaks in the frequency range between 500 and 900 cm-1, which have been assigned to InN-like and AlN-like E2 modes and A1(LO) mode of the InAlN. These results agree with theoretical calculations previously reported where two-mode and one-mode behavior was predicted for the E and A(LO) modes, respectively. Photoluminescence and photoluminescence excitation allowed us to determine the emission and absorption energies of the InAlN epilayers. Both energies display a redshift as the InN fraction increases. We find a roughly linear increase of the Stokes shift with InN fraction, with Stokes shift values of ≈0.5 eV in the composition range close to the lattice-matched condition.

Comparison Study of Structural and Optical Properties of InxGa1-xN/GaN Quantum Wells with Different in Compositions

1999 ◽  
Vol 595 ◽  
Author(s):  
Yong-Hwan Kwon ◽  
G. H. Gainer ◽  
S. Bidnyk ◽  
Y. H. Cho ◽  
J. J. Song ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Chemical Vapor ◽  
Multiple Quantum ◽  
Nonradiative Recombination ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Recombination Rates ◽  
Satellite Peak ◽  
Interface Quality

AbstractThe effect of In on the structural and optical properties of InxGa1−xN/GaN multiple quantum wells (MQWs) was investigated. These were five-period MQWs grown on sapphire by metalorganic chemical vapor deposition. Increasing the In composition caused broadening of the high-resolution x-ray diffraction superlattice satellite peak and the photoluminescence-excitation bandedge. This indicates that the higher In content degrades the interface quality because of nonuniform In incorporation into the GaN layer. However, the samples with higher In compositions have lower room temperature (RT) stimulated (SE) threshold densities and lower nonradiative recombination rates. The lower RT SE threshold densities of the higher In samples show that the suppression of nonradiative recombination by In overcomes the drawback of greater interface imperfection.

scholarly journals Anisotropic structural and optical properties of a-plane (112¯0) AlInN nearly-lattice-matched to GaN

2011 ◽  
Vol 98 (18) ◽  
pp. 181108 ◽  
Author(s):  
Masihhur R. Laskar ◽  
Tapas Ganguli ◽  
A. A. Rahman ◽  
Ashish Arora ◽  
Nirupam Hatui ◽  
...  
Keyword(s):  
Optical Properties ◽  
Structural And Optical Properties ◽  
Lattice Matched

Structural and Optical Properties of Cu2ZnSn(SxSe1–x)4 Thin Films

2018 ◽  
Vol 23 (3) ◽  
pp. 230-239
Author(s):  
E.P. Zaretskaya ◽  
◽  
V.F. Gremenok ◽  
A.V. Stanchik ◽  
A.N. Pyatlitski ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Structural And Optical Properties
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