Effect of boron doping on the structural properties of polycrystalline silicon films grown at reduced pressures

1994 ◽  
Vol 76 (3) ◽  
pp. 1572-1577 ◽  
Author(s):  
Horng‐Chih Lin ◽  
Hsiao‐Yi Lin ◽  
Chun‐Yen Chang ◽  
Tz‐Gwei Jung ◽  
P. J. Wang ◽  
...  
Keyword(s):  
Structural Properties ◽  
Polycrystalline Silicon ◽  
Boron Doping ◽  
Silicon Films ◽  
Polycrystalline Silicon Films ◽  
Reduced Pressures

Deposition ofinsituboron‐doped polycrystalline silicon films at reduced pressures

1994 ◽  
Vol 64 (6) ◽  
pp. 763-765 ◽  
Author(s):  
Horng‐Chih Lin ◽  
Hsiao‐Yi Lin ◽  
Chun‐Yen Chang ◽  
Tan‐Fu Lei ◽  
P. J. Wang ◽  
...  
Keyword(s):  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Polycrystalline Silicon Films ◽  
Reduced Pressures

Electrical and structural properties of pulse laser-annealed polycrystalline silicon films

1983 ◽  
Vol 30 (7) ◽  
pp. 737-744 ◽  
Author(s):  
T.I. Cox ◽  
V.G.I. Deshmukh ◽  
J.R. Hill ◽  
H.C. Webber ◽  
N.G. Chew ◽  
...  
Keyword(s):  
Structural Properties ◽  
Pulse Laser ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Polycrystalline Silicon Films

Structural properties of polycrystalline silicon films formed by pulsed rapid thermal processing

2002 ◽  
Vol 11 (5) ◽  
pp. 492-495 ◽  
Author(s):  
Wang Yong-Qian ◽  
Liao Xian-Bo ◽  
Diao Hong-Wei, Zhang Shi-Bin ◽  
Xu Yan-Yue ◽  
Chen Chang-Yong, Chen Wei-De ◽  
...  
Keyword(s):  
Structural Properties ◽  
Thermal Processing ◽  
Polycrystalline Silicon ◽  
Rapid Thermal Processing ◽  
Silicon Films ◽  
Polycrystalline Silicon Films

Interface morphology of thermal oxide grown on polycrystalline silicon by different processes

1992 ◽  
Vol 50 (2) ◽  
pp. 1396-1397
Author(s):  
H. Yen ◽  
E. P. Kvam ◽  
R. Bashir ◽  
S. Venkatesan ◽  
G. W. Neudeck
Keyword(s):  
Integrated Circuits ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Interface Morphology ◽  
Oxide Interface ◽  
Poly Silicon ◽  
Thermal Oxide ◽  
Grain Orientations ◽  
Polycrystalline Silicon Films ◽  
P Type

Polycrystalline silicon, when highly doped, is commonly used in microelectronics applications such as gates and interconnects. The packing density of integrated circuits can be enhanced by fabricating multilevel polycrystalline silicon films separated by insulating SiO2 layers. It has been found that device performance and electrical properties are strongly affected by the interface morphology between polycrystalline silicon and SiO2. As a thermal oxide layer is grown, the poly silicon is consumed, and there is a volume expansion of the oxide relative to the atomic silicon. Roughness at the poly silicon/thermal oxide interface can be severely deleterious due to stresses induced by the volume change during oxidation. Further, grain orientations and grain boundaries may alter oxidation kinetics, which will also affect roughness, and thus stress.Three groups of polycrystalline silicon films were deposited by LPCVD after growing thermal oxide on p-type wafers. The films were doped with phosphorus or arsenic by three different methods.

Structure of Annealed Polycrystalline Silicon Films. I. Recrystallization

1986 ◽  
Vol 98 (2) ◽  
pp. 383-390 ◽  
Author(s):  
F. L. Edelman ◽  
J. Heydenreich ◽  
D. Hoehl ◽  
J. Matthäi ◽  
I. Melnik ◽  
...  
Keyword(s):  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Polycrystalline Silicon Films
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