Phosphorus and boron doping effects on solid phase recrystallization of polycrystalline silicon films amorphized by germanium ion implantation

1996 ◽  
Vol 15 (4) ◽  
pp. 343-344
Author(s):  
M. -Y. Kang ◽  
T. Yamamoto ◽  
T. Matsui ◽  
T. Kuwano
1992 ◽  
Vol 31 (Part 2, No. 10A) ◽  
pp. L1392-L1395 ◽  
Author(s):  
Hiroaki Kakinuma ◽  
Mikio Mohri ◽  
Taiji Tsuruoka

Author(s):  
Curtis Anderson ◽  
Lin Cui ◽  
Uwe Kortshagen

This paper describes the rapid formation of polycrystalline silicon films through seeding with silicon nanocrystals. The incorporation of seed crystals into amorphous silicon films helps to eliminate the crystallization incubation time observed in non-seeded amorphous silicon films. Furthermore, the formation of several tens of nanometer in diameter voids is observed when cubic silicon nanocrystals with around 30 nm in size are embedded in the amorphous films. These voids move through the amorphous film with high velocity, pulling behind them a crystallized “tail.” This mechanism leads to rapid formation of polycrystalline films.


1994 ◽  
Vol 76 (3) ◽  
pp. 1572-1577 ◽  
Author(s):  
Horng‐Chih Lin ◽  
Hsiao‐Yi Lin ◽  
Chun‐Yen Chang ◽  
Tz‐Gwei Jung ◽  
P. J. Wang ◽  
...  

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