Point defects and thermoelectric properties of iron disilicide ceramics sintered with SiH4‐plasma‐processed micrograins

1994 ◽  
Vol 76 (4) ◽  
pp. 2097-2103 ◽  
Author(s):  
T. Miki ◽  
Y. Matsui ◽  
Y. Teraoka ◽  
Y. Ebina ◽  
K. Matsubara ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Point Defects ◽  
Iron Disilicide

Influence of GeP precipitates on the thermoelectric properties of P-type GeTe and Ge0.9−xPxSb0.1Te compounds

CrystEngComm ◽  
2018 ◽  
Vol 20 (41) ◽  
pp. 6449-6457 ◽  
Author(s):  
J. Rajeev Gandhi ◽  
Raja Nehru ◽  
Sheng-Ming Chen ◽  
Raman Sankar ◽  
Khasim Saheb Bayikadi ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Point Defects ◽  
Secondary Phase ◽  
Rich Phase ◽  
System P ◽  
Scattering Effects ◽  
P Type

The incorporation of P in GST forms the secondary GeP rich phase. The presence of secondary phase and point defects (Sb and P) enhanced the additional scattering effects in the system.

Thermoelectric Properties of Doped Iron Disilicide

2000 ◽  
Vol 626 ◽  
Author(s):  
Jun-ichi Tani ◽  
Hiroyasu Kido
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Measured Temperature ◽  
Iron Disilicide ◽  
Measured Temperature Range ◽  
Temperature Range

ABSTRACTIn order to investigate the thermoelectric properties of Re-doped β-FeSi2 (Fe1-xRexSi2), Ir-doped β-FeSi2 (Fe1-xIrxSi2), and Pt-doped β-FeSi2 (Fe1-xPtxSi2), the electrical resistivity, the Seebeck coefficient, and the thermal conductivity of these samples have been measured in the temperature range between 300 and 1150 K. Fe1-xRexSi2 is p-type, while Fe1-xIrxSi2 and Fe1-xPt xSi2 are n-type over the measured temperature range. The solubility limits of dopant are estimated to be 0.2at% for Fe1-xRexSi2, 0.5at% for Fe1-xIrxSi2, and 1.9at% for Fe1-xPtxSi2. A maximum ZT value of 0.14 was obtained for Fe1-xPt xSi2 (x=0.03) at the temperature 847 K.

Effect of FAPAS Process on the Thermoelectric Properties of β-FeSi2

2010 ◽  
Vol 650 ◽  
pp. 137-141
Author(s):  
Qing Sen Meng ◽  
Wen Hao Fan ◽  
L.Q. Wang ◽  
L.Z. Ding
Keyword(s):  
Thermal Conductivity ◽  
Grain Size ◽  
Phase Transformation ◽  
Thermoelectric Properties ◽  
Thermoelectric Materials ◽  
Annealing Time ◽  
Figure Of Merit ◽  
Iron Disilicide ◽  
Temperature Range ◽  
Average Grain Size

Iron disilicide (-FeSi2, and -FeSi2+Cu0.1wt%) were prepared by a field-activated pressure assisted synthesis(FAPAS) method from elemental powders and the thermoelectric properties were investigated. The average grain size of these products is about 0.3m. The thermal conductivity of these materials is 3-4wm-1K-1in the temperature range 300-725K. These products’ figure of merit is 28.50×10-4 in the temperature range 330-450K. The additions of Cu promote the phase transformation of -Fe2Si5 + -FeSi → β-FeSi2 and shorten the annealing time. It is proved that FAPAS is a benign and rapid process for sintering of -FeSi2 thermoelectric materials.

Vacancy Phonon Scattering and Thermoelectric Properties in In2Te3–SnTe Compounds

2010 ◽  
Vol 650 ◽  
pp. 126-131 ◽  
Author(s):  
Hong Fu ◽  
Peng Zhan Ying ◽  
J.L. Cui ◽  
Y.M. Yan ◽  
X.J. Zhang
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Point Defects ◽  
Figure Of Merit ◽  
Lattice Thermal Conductivity ◽  
Phonon Scattering ◽  
Chemical Compositions ◽  
Thermoelectric Figure ◽  
Solid Solution Formation ◽  
Solution Formation

Solid solution formation is a common and effective way to reduce the lattice thermal conductivity for thermoelectric materials because of additional phonon scattering by point defects and grain boundaries. In the present work we prepared In2Te3–SnTe compounds using a mild solidification technique and evaluated their thermoelectric properties in the temperature range from 318705 K. Measurements reveal that the transport properties are strongly dependent on the chemical composition  In2Te3 content, and lattice thermal conductivity significantly reduces above a minimum In2Te3 concentration, which can possibly be explained by an introduction of the vacancy on the indium sublattice and periodical vacancy planes. The highest thermoelectric figure of merit ZT of 0.19 can be achieved at 705 K, and a big improvement of In2Te3 based alloys would be expected if a proper optimization to the chemical compositions and structures were made.

Thermoelectric properties of boron doped iron disilicide

2002 ◽  
Author(s):  
Y. Isoda ◽  
Y. Shinohara ◽  
Y. Imai ◽  
I.A. Nishida ◽  
O. Ohashi
Keyword(s):  
Thermoelectric Properties ◽  
Iron Disilicide ◽  
Boron Doped

Enhancement of thermoelectric properties by Na doping in Te-free p-type AgSbSe2

2015 ◽  
Vol 44 (3) ◽  
pp. 1046-1051 ◽  
Author(s):  
Songting Cai ◽  
Zihang Liu ◽  
Jianyong Sun ◽  
Rui Li ◽  
Weidong Fei ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
Point Defects ◽  
Power Factor ◽  
Stacking Faults ◽  
Na Doping ◽  
P Type

Na substituting Sb in the AgSbSe2 not only improves the power factor caused by the enhanced carrier concentration, but also decreases the thermal conductivity due to point defects, nanoscale stacking faults and Na-rich precipitate. Consequently, a high ZT value of 0.92 is achieved in the AgSb0.99Na0.01Se2 sample.

Sign in / Sign up

Export Citation Format

Share Document