Influence of GeP precipitates on the thermoelectric properties of P-type GeTe and Ge0.9−xPxSb0.1Te compounds
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System P
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The incorporation of P in GST forms the secondary GeP rich phase. The presence of secondary phase and point defects (Sb and P) enhanced the additional scattering effects in the system.
Keyword(s):
Keyword(s):
2021 ◽
Vol 127
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pp. 105721