Influence of pre-annealing and Mn + Al double doping on the microstructure and thermoelectric properties of iron disilicide

Author(s):  
H.Y. Chen ◽  
X.B. Zhao ◽  
Z.M. He ◽  
C. Stiewe ◽  
E. Muller
2000 ◽  
Vol 626 ◽  
Author(s):  
Jun-ichi Tani ◽  
Hiroyasu Kido

ABSTRACTIn order to investigate the thermoelectric properties of Re-doped β-FeSi2 (Fe1-xRexSi2), Ir-doped β-FeSi2 (Fe1-xIrxSi2), and Pt-doped β-FeSi2 (Fe1-xPtxSi2), the electrical resistivity, the Seebeck coefficient, and the thermal conductivity of these samples have been measured in the temperature range between 300 and 1150 K. Fe1-xRexSi2 is p-type, while Fe1-xIrxSi2 and Fe1-xPt xSi2 are n-type over the measured temperature range. The solubility limits of dopant are estimated to be 0.2at% for Fe1-xRexSi2, 0.5at% for Fe1-xIrxSi2, and 1.9at% for Fe1-xPtxSi2. A maximum ZT value of 0.14 was obtained for Fe1-xPt xSi2 (x=0.03) at the temperature 847 K.


1994 ◽  
Vol 76 (4) ◽  
pp. 2097-2103 ◽  
Author(s):  
T. Miki ◽  
Y. Matsui ◽  
Y. Teraoka ◽  
Y. Ebina ◽  
K. Matsubara ◽  
...  

2011 ◽  
Vol 695 ◽  
pp. 65-68 ◽  
Author(s):  
Kwan Ho Park ◽  
Il Ho Kim

Co4-xFexSb12-ySny skutterudites were synthesized by mechanical alloying and hot pressing, and thermoelectric properties were examined. The carrier concentration increased by doping and thereby the electrical conductivity increased compared with intrinsic CoSb3. Every specimen had a positive Seebeck coefficient. Fe doping caused a decrease in the Seebeck coefficient but it could be enhanced by Fe/Sn double doping possibly due to charge compensation. The thermal conductivity was desirably very low and this originated from ionized impurity-phonon scattering. Thermoelectric properties were improved remarkably by Fe/Sn doping, and a maximum figure of merit, ZT = 0.5 was obtained at 723 K in the Co3FeSb11.2Sn0.8 specimen.


2010 ◽  
Vol 650 ◽  
pp. 137-141
Author(s):  
Qing Sen Meng ◽  
Wen Hao Fan ◽  
L.Q. Wang ◽  
L.Z. Ding

Iron disilicide (-FeSi2, and -FeSi2+Cu0.1wt%) were prepared by a field-activated pressure assisted synthesis(FAPAS) method from elemental powders and the thermoelectric properties were investigated. The average grain size of these products is about 0.3m. The thermal conductivity of these materials is 3-4wm-1K-1in the temperature range 300-725K. These products’ figure of merit is 28.50×10-4 in the temperature range 330-450K. The additions of Cu promote the phase transformation of -Fe2Si5 + -FeSi → β-FeSi2 and shorten the annealing time. It is proved that FAPAS is a benign and rapid process for sintering of -FeSi2 thermoelectric materials.


Author(s):  
Y. Isoda ◽  
Y. Shinohara ◽  
Y. Imai ◽  
I.A. Nishida ◽  
O. Ohashi

1997 ◽  
Vol 9 (3/4) ◽  
pp. 177-179
Author(s):  
Hiroaki ANNO ◽  
Kakuei MATSUBARA ◽  
Yasuhiro NOTOHARA ◽  
Tsutomu SAKAKIBARA ◽  
Hirofumi TASHIRO

2007 ◽  
Vol 438 (1-2) ◽  
pp. 303-309 ◽  
Author(s):  
Zeming He ◽  
Dieter Platzek ◽  
Christian Stiewe ◽  
Haiyan Chen ◽  
Gabriele Karpinski ◽  
...  

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