Growth and shrinkage of surface stacking faults in float‐zone and Czochralski silicon

1994 ◽  
Vol 76 (8) ◽  
pp. 4547-4552 ◽  
Author(s):  
M. Dammann ◽  
H. Baltes ◽  
N. Strecker ◽  
U. Thiemann
Keyword(s):  
Stacking Faults ◽  
Czochralski Silicon ◽  
Float Zone

Intrinsic Gettering in Oxygen-Free Silicon

1984 ◽  
Vol 36 ◽  
Author(s):  
K. Nauka ◽  
J. Lagowski ◽  
H. C. Gatos
Keyword(s):  
Magnetic Field ◽  
Czochralski Silicon ◽  
Float Zone ◽  
Free Silicon

ABSTRACTWe found that the intrinsic gettering can be effectively realized in oxygen-lean Czochralski silicon grown in a magnetic field as well as in oxygen-free float-zone silicon. The intrinsic gettering has been observed thus far only in oxygen-rich Czochralski silicon and it has been believed to be intimately related to oxygen. We present experimental characteristics of the new intrinsic gettering process, and we propose a model involving outdiffusion and precipitation of silicon interstitials rather than oxygen which is involved in the standard intrinsic gettering.

Precipitation of Oxygen and Mechanism of Stacking Fault Formation in Czochralski Silicon Bulk Crystals

1982 ◽  
Vol 14 ◽  
Author(s):  
Kazumi Wada ◽  
Naohisa Inoue ◽  
Jiro Osaka
Keyword(s):  
Growth Model ◽  
Growth Kinetics ◽  
Stacking Faults ◽  
Diffusional Growth ◽  
Czochralski Silicon ◽  
Self Diffusion ◽  
Diffusion Limited ◽  
Silicon Bulk ◽  
Precipitate Growth ◽  
Kinetics Of

ABSTRACTThis paper describes recent progress on nucleation and growth of oxide precipitates and stacking faults in Czochralski silicon. Conclusions on the growth kinetics of oxide precipitates are drawn from the experiments and analysis of growth kinetics of two-dimensional precipitates: The experimentally obtained growth kinetics, three-quarter power law is theoretically derived and the precipitate growth is demonstrated to be diffusion-limited by oxygen interstitials. The formation mechanism of stacking faults is the Bardeen-Herring mechanism. Based on diffusional growth model, the growth kinetics of stacking faults are analyzed, assuming a coexistence of self-interstitial supersaturation and vacancy undersaturation. It is found that the growth is driven by vacancies in undersaturation. Vacancy component of self-diffusion has been determined and found to be predominant at low temperature. The possibility of growth model proposed for increase of oxide precipitate density during annealing has been excluded. Both processes, homogeneous and heterogeneous nucleation, have been taking place during annealing.

Nitrogen transport in float-zone and Czochralski silicon investigated by dislocation locking experiments

2005 ◽  
Vol 202 (5) ◽  
pp. 926-930 ◽  
Author(s):  
J. D. Murphy ◽  
A. Giannattasio ◽  
S. Senkader ◽  
R. J. Falster ◽  
P. R. Wilshaw
Keyword(s):  
Nitrogen Transport ◽  
Czochralski Silicon ◽  
Float Zone

Behavior Of Point Defects In CZ Silicon Crystal Growth-Formation Of Polyhedral Cavities And Oxidation-Induced Stacking Fault Nuclei

1996 ◽  
Vol 442 ◽  
Author(s):  
K Tanahashi ◽  
N. Inoue ◽  
Y. Mizokawa
Keyword(s):  
Crystal Growth ◽  
Ternary System ◽  
Point Defects ◽  
Silicon Crystal ◽  
Stacking Faults ◽  
Stacking Fault ◽  
Czochralski Silicon ◽  
Growth Formation

AbstractThe origin of oxidation–induced stacking faults (OSF) and polyhedral cavities in as–grown Czochralski silicon (CZ–Si) crystals is discussed with comparison to the behavior of previously investigated grown–in oxide precipitates. The incorporation, diffusion and reaction in the vacancy, self–interstitial and oxygen ternary system are considered to discuss the origin of grown–in defects.

Sign in / Sign up

Export Citation Format

Share Document