Strong orientation dependence of the formation of surface stacking faults during oxidation of float‐zone silicon

1982 ◽  
Vol 40 (4) ◽  
pp. 340-341 ◽  
Author(s):  
J. Dieleman ◽  
T. H. G. Martens
Keyword(s):  
Stacking Faults ◽  
Orientation Dependence ◽  
Float Zone ◽  
Strong Orientation

Orientation Dependence of Ductility of Mg Single Crystals at Elevated Temperature

2005 ◽  
Vol 488-489 ◽  
pp. 193-196 ◽  
Author(s):  
Hiromi Miura ◽  
Taku Sakai ◽  
H. Nogawa ◽  
Xu Yue Yang ◽  
Yoshimi Watanabe ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystals ◽  
Crystal Orientation ◽  
Fracture Strain ◽  
Orientation Dependence ◽  
High Temperature Deformation ◽  
Temperature Deformation ◽  
High Ductility ◽  
Superplastic Behavior ◽  
Strong Orientation

Orientation-controlled Mg single crystals were tensile tested at temperatures between 473 K and 673 K at a strain rate of 4.2 x 10-4 s-1 in vacuum. Though all the single crystals showed high ductility compared with that of polycrystals, the ductility of the single crystals strongly depended on the crystal orientation. The [27 -1 -26 1] single crystal showed 0.57 fracture strain, while the [3 8 -11 -1] single crystal showed superplastic behavior of ductility over 1.8 strain. The observed strong orientation dependence of ductility seemed to be caused by orientation dependence of ease occurrence of dynamic recrystallization (DRX) in the single crystals during high-temperature deformation. The orientation dependence of ductility of Mg single crystals will be discussed in detail concerning crystallographical orientations of the single crystals, occurrence of DRX and fracture.

Strong orientation dependence of the scattering of fluoroform by graphite (0001)

1990 ◽  
Vol 92 (1) ◽  
pp. 801-802 ◽  
Author(s):  
R. Scott Mackay ◽  
Thomas J. Curtiss ◽  
Richard B. Bernstein
Keyword(s):  
Orientation Dependence ◽  
Strong Orientation

Study of Deformation Twinning and Planar Slip in a TWIP Steel by Electron Channeling Contrast Imaging in a SEM

2011 ◽  
Vol 702-703 ◽  
pp. 523-529 ◽  
Author(s):  
Ivan Gutierrez-Urrutia ◽  
Dierk Raabe
Keyword(s):  
Twip Steel ◽  
High Strain ◽  
Dislocation Substructure ◽  
True Strain ◽  
Orientation Dependence ◽  
Contrast Imaging ◽  
Electron Channeling ◽  
Strong Orientation ◽  
Dislocation Cells ◽  
Planar Dislocation

We study the dislocation and twin substructures in a high manganese twinning-induced-plasticity steel (TWIP) by means of electron channeling contrast imaging. At low strain (true strain below 0.1) the dislocation substructure shows strong orientation dependence. It consists of dislocation cells and planar dislocation arrangements. This dislocation substructure is replaced by a complex dislocation/twin substructure at high strain (true strain of 0.3-0.4). The twin substructure also shows strong orientation dependence. We identify three types of dislocation/twin substructures. Two of these substructures, those which are highly favorable or unfavorable oriented for twinning, exhibit a Schmid behavior. The other twin substructure does not fulfill Schmid’s law.

Growth and shrinkage of surface stacking faults in float‐zone and Czochralski silicon

1994 ◽  
Vol 76 (8) ◽  
pp. 4547-4552 ◽  
Author(s):  
M. Dammann ◽  
H. Baltes ◽  
N. Strecker ◽  
U. Thiemann
Keyword(s):  
Stacking Faults ◽  
Czochralski Silicon ◽  
Float Zone

Stacking Faults and Dislocation Dissociation in MoSi2

2008 ◽  
Vol 1128 ◽  
Author(s):  
Miroslav Cak ◽  
Mojmir Sob ◽  
Vaclav Paidar ◽  
Vaclav Vitek
Keyword(s):  
Shear Stress ◽  
Slip System ◽  
Density Functional ◽  
Deformation Behaviour ◽  
Stacking Faults ◽  
Dislocation Core ◽  
Orientation Dependence ◽  
The Body ◽  
Anisotropic Elastic ◽  
Critical Resolved Shear Stress

AbstractThe intermetallic compound MoSi2 crystallises in the body-centred-tetragonal C11b structure and while it is brittle when loaded in tension, it deforms plastically in compression even at and below the room temperature. The ductility of MoSi2 is controlled by the mobility of 1/2〈331] dislocations on {013) planes but the critical resolved shear stress for this slip system depends strongly on the orientation of loading and it is the highest for compression along the 〈001] axis. Such deformation behaviour suggests that the dislocation core is controlling the slip on the {013)〈331] system. Since the most important core effect is dissociation into partial dislocations connected by metastable stacking faults the first goal of this paper is to ascertain such faults. This is done by employing the concept of the γ-surface. The γ-surfaces have been calculated for the (013) and (110) planes using a method based on the density functional theory. While there is only one possible stacking fault on the (110) plane, three distinct stacking faults have been found on the (013) plane. This leads to a variety of possible dislocation splittings and the energetics of these dissociations has been studied by employing the anisotropic elastic theory of dislocations. The most important finding is the non-planar dissociation of the 1/2〈331] screw dislocation that is favoured over the planar splittings and may be responsible for the orientation dependence of the critical resolved shear stress for the {013)〈331] slip system.

Hydrogen adsorption on Al(110): strong orientation-dependence of aluminum hydride desorption

1992 ◽  
Vol 268 (1-3) ◽  
pp. L287-L292 ◽  
Author(s):  
H. Kondoh ◽  
M. Hara ◽  
K. Domen ◽  
H. Nozoye
Keyword(s):  
Hydrogen Adsorption ◽  
Aluminum Hydride ◽  
Orientation Dependence ◽  
Strong Orientation

scholarly journals Strong orientation dependence of surface mass density profiles of dark haloes at large scales

2018 ◽  
Vol 477 (2) ◽  
pp. 2141-2153 ◽  
Author(s):  
Ken Osato ◽  
Takahiro Nishimichi ◽  
Masamune Oguri ◽  
Masahiro Takada ◽  
Teppei Okumura
Keyword(s):  
Mass Density ◽  
Orientation Dependence ◽  
Density Profiles ◽  
Surface Mass ◽  
Strong Orientation ◽  
Surface Mass Density
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