Sb-doping of ZnO: Phase segregation and its impact on p-type doping

2011 ◽  
Vol 98 (13) ◽  
pp. 131902 ◽  
Author(s):  
F. Friedrich ◽  
I. Sieber ◽  
C. Klimm ◽  
M. Klaus ◽  
Ch. Genzel ◽  
...  
Keyword(s):  
Phase Segregation ◽  
Sb Doping ◽  
P Type

P-type Sb doping hierarchical WO3 microspheres for superior close to room temperature ammonia sensor

2022 ◽  
pp. 131365
Author(s):  
Guanyu Yao ◽  
Jun Yu ◽  
Hao Wu ◽  
Zhongzhou Li ◽  
Wenjing Zou ◽  
...  
Keyword(s):  
Room Temperature ◽  
Ammonia Sensor ◽  
Sb Doping ◽  
P Type

scholarly journals Beneficial CuO Phase Segregation in the Ternary p-Type Oxide Photocathode CuBi2O4

2019 ◽  
Vol 2 (6) ◽  
pp. 4111-4117 ◽  
Author(s):  
Zemin Zhang ◽  
Sarah A. Lindley ◽  
Rohan Dhall ◽  
Karen Bustillo ◽  
Weihua Han ◽  
...  
Keyword(s):  
Phase Segregation ◽  
P Type

Controlled p-type Sb doping in LPE-grown Hg1−x Cdx Te epilayers

1993 ◽  
Vol 22 (9) ◽  
pp. 1165-1172 ◽  
Author(s):  
Theodore C. Harman
Keyword(s):  
Sb Doping ◽  
P Type

An Overview of Doping Strategies in Si:MBE

1991 ◽  
Vol 220 ◽  
Author(s):  
Richard Kubiak ◽  
Carl Parry
Keyword(s):  
High Resolution ◽  
Low Temperatures ◽  
Good Control ◽  
Growth Conditions ◽  
Low Energy ◽  
Type B ◽  
Formidable Challenge ◽  
Sb Doping ◽  
B Doping ◽  
P Type

ABSTRACTThis paper reviews the diverse methods used to achieve doping during MBE of Si and SiGe, and the incorporation processes involved. The optimum choice of dopant and methodology depends on the most appropriate growth conditions for a given structure. At growth temperatures exceeding 750°C, Potential Enhanced n-type doping of coevaporated Sb is capable of achieving high resolution structures, at doping levels up to mid-1019 cm−3. At lower temperatures, such as those most suited to SiGe growth, Sb-doping becomes a formidable challenge, due to the high accumulated equilibrium coverages required. Low energy ion implantation appears to be the favoured route for good control, p-type B-doping can readily be achieved by coevaporation of compounds or, to avoid oxygen incorporation at low temperatures, the element. A “designer” chart for B-doping of Si is presented.

scholarly journals Morphology and electrical characteristics of p-type ZnO microwires with zigzag rough surfaces induced by Sb doping

RSC Advances ◽  
2018 ◽  
Vol 8 (61) ◽  
pp. 35023-35030 ◽  
Author(s):  
Linlin Shi ◽  
Luchao Du ◽  
Yingtian Xu ◽  
Liang Jin ◽  
He Zhang ◽  
...  
Keyword(s):  
Rough Surface ◽  
Doping Concentration ◽  
Rough Surfaces ◽  
Electrical Characteristics ◽  
Sb Doping ◽  
P Type ◽  
Type Conduction

Sb-doped microwires which have a zigzag rough surface demonstrate p-type conduction and enhanced rectifying behavior with increasing Sb doping concentration.

Antimony Doped ZnO Nanorods - A Change From n to p Type?

2010 ◽  
Vol 1256 ◽  
Author(s):  
Joe Briscoe ◽  
Diego E. Gallardo ◽  
Steve Dunn
Keyword(s):  
Ethylene Glycol ◽  
Zno Nanorods ◽  
Ordered Structure ◽  
Aqueous Synthesis ◽  
Reaction Solution ◽  
Sb Doping ◽  
Doped Zno ◽  
Zno Rods ◽  
P Type

AbstractThe in-situ aqueous synthesis of ZnO nanorods doped with Sb is presented. To control the inclusion of Sb into the ZnO nanorods structure ethylene glycol (EG) is added to the reaction solution. The addition of EG reduces the rate at which Sb is included in the ZnO rods and produces nanorods with a morphology that is similar to the undoped rods. This is contrary to the rods produced with Sb in the absence of EG which produce a less well ordered structure. An I/V curve taken from individual rods indicates a change in the diode behaviour. The change in I/V behaviour is associated with a change from the natural n-type behaviour of ZnO to a p-type behaviour due to the Sb doping.

P-type ZnO by Sb doping for PN-junction photodetectors

2006 ◽  
Author(s):  
J. L. Liu ◽  
F. X. Xiu ◽  
L. J. Mandalapu ◽  
Z. Yang
Keyword(s):  
Pn Junction ◽  
Sb Doping ◽  
P Type

scholarly journals p-type Zn1−xMgxO films with Sb doping by radio-frequency magnetron sputtering

2006 ◽  
Vol 89 (20) ◽  
pp. 202102 ◽  
Author(s):  
Peng Wang ◽  
Nuofu Chen ◽  
Zhigang Yin ◽  
Ruixuan Dai ◽  
Yiming Bai
Keyword(s):  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
Sb Doping ◽  
P Type

Influence of a Nano Phase Segregation on the Thermoelectric Properties of the p-Type Doped Stannite Compound Cu2+xZn1–xGeSe4

2012 ◽  
Vol 134 (16) ◽  
pp. 7147-7154 ◽  
Author(s):  
Wolfgang G. Zeier ◽  
Aaron LaLonde ◽  
Zachary M. Gibbs ◽  
Christophe P. Heinrich ◽  
Martin Panthöfer ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Phase Segregation ◽  
P Type

scholarly journals Investigation of Phase Segregation in p-Type Bi0.5Sb1.5Te3 Thermoelectric Alloys by In Situ Melt Spinning to Determine Possible Carrier Filtering Effect

Materials ◽  
2021 ◽  
Vol 14 (24) ◽  
pp. 7567
Author(s):  
Dong Ho Kim ◽  
TaeWan Kim ◽  
Se Woong Lee ◽  
Hyun-Sik Kim ◽  
Weon Ho Shin ◽  
...  
Keyword(s):  
Melt Spinning ◽  
Phase Segregation ◽  
Metal Chalcogenides ◽  
Secondary Phases ◽  
Band Bending ◽  
Metal Elements ◽  
Semiconducting Properties ◽  
Filtering Effect ◽  
P Type

One means of enhancing the performance of thermoelectric materials is to generate secondary nanoprecipitates of metallic or semiconducting properties in a thermoelectric matrix, to form proper band bending and, in turn, to induce a low-energy carrier filtering effect. However, forming nanocomposites is challenging, and proper band bending relationships with secondary phases are largely unknown. Herein, we investigate the in situ phase segregation behavior during melt spinning with various metal elements, including Ti, V, Nb, Mo, W, Ni, Pd, and Cu, in p-type Bi0.5Sb1.5Te3 (BST) thermoelectric alloys. The results showed that various metal chalcogenides were formed, which were related to the added metal elements as secondary phases. The electrical conductivity, Seebeck coefficient, and thermal conductivity of the BST composite with various secondary phases were measured and compared with those of pristine BST alloys. Possible band alignments with the secondary phases are introduced, which could be utilized for further investigation of a possible carrier filtering effect when forming nanocomposites.

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