P-type ZnO by Sb doping for PN-junction photodetectors

2006 ◽  
Author(s):  
J. L. Liu ◽  
F. X. Xiu ◽  
L. J. Mandalapu ◽  
Z. Yang
Keyword(s):  
Pn Junction ◽  
Sb Doping ◽  
P Type

Si1−xGex Bulk Crystals Growth and PN Junction Formation by Diffusing Phosphorus

1999 ◽  
Vol 607 ◽  
Author(s):  
S. Kato ◽  
T. Horikoshi ◽  
T. Ohkubo ◽  
T. Iida ◽  
Y. Takano
Keyword(s):  
Silicon Germanium ◽  
Bulk Crystals ◽  
Temperature Dependent ◽  
Alloy Scattering ◽  
Self Diffusion ◽  
Pn Junction ◽  
Current Voltage ◽  
Vertical Bridgman ◽  
Current Voltage Characteristics ◽  
P Type

AbstractThe bulk crystal of silicon germanium was grown by vertical Bridgman method with germanium composition, x, varying from 0.6 to 1.0. The temperature dependent variation of the mobility is indicative of alloy scattering dominantly for the bulk wafer. Phosphorus was diffused in as-grown p-type bulk wafer at 850 °C to form pn-junction, and the diffusion coefficient of phosphorus was evaluated as a function of x. The diffusion behavior of phosphorus in silicon germanium is closely correlated with the germanium self-diffusion with changing x. For specimens with lower content x, P concentration profiles indicated “kink and tail” shape, while it was not observed for higher x. For current-voltage characteristics measurement, an ideality factor was obtained.

scholarly journals Increased efficiency in pn-junction PbS QD solar cells via NaHS treatment of the p-type layer

2017 ◽  
Vol 110 (10) ◽  
pp. 103904 ◽  
Author(s):  
Mark J. Speirs ◽  
Daniel M. Balazs ◽  
Dmitry N. Dirin ◽  
Maksym V. Kovalenko ◽  
Maria Antonietta Loi
Keyword(s):  
Solar Cells ◽  
Pn Junction ◽  
Type Layer ◽  
P Type

scholarly journals Deep-Ultraviolet (DUV)-Induced Doping in Single Channel Graphene for Pn-Junction

Nanomaterials ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 3003
Author(s):  
Asif Ali ◽  
So-Young Kim ◽  
Muhammad Hussain ◽  
Syed Hassan Abbas Jaffery ◽  
Ghulam Dastgeer ◽  
...  
Keyword(s):  
Single Channel ◽  
Field Effect Transistors ◽  
Single Layer ◽  
Charge Carrier Mobility ◽  
Radiation Environment ◽  
Pmma Layer ◽  
Laboratory Environment ◽  
Pn Junction ◽  
Deep Ultraviolet ◽  
P Type

The electronic properties of single-layer, CVD-grown graphene were modulated by deep ultraviolet (DUV) light irradiation in different radiation environments. The graphene field-effect transistors (GFETs), exposed to DUV in air and pure O2, exhibited p-type doping behavior, whereas those exposed in vacuum and pure N2 gas showed n-type doping. The degree of doping increased with DUV exposure time. However, n-type doping by DUV in vacuum reached saturation after 60 min of DUV irradiation. The p-type doping by DUV in air was observed to be quite stable over a long period in a laboratory environment and at higher temperatures, with little change in charge carrier mobility. The p-doping in pure O2 showed ~15% de-doping over 4 months. The n-type doping in pure N2 exhibited a high doping effect but was highly unstable over time in a laboratory environment, with very marked de-doping towards a pristine condition. A lateral pn-junction of graphene was successfully implemented by controlling the radiation environment of the DUV. First, graphene was doped to n-type by DUV in vacuum. Then the n-type graphene was converted to p-type by exposure again to DUV in air. The n-type region of the pn-junction was protected from DUV by a thick double-coated PMMA layer. The photocurrent response as a function of Vg was investigated to study possible applications in optoelectronics.

P-type Sb doping hierarchical WO3 microspheres for superior close to room temperature ammonia sensor

2022 ◽  
pp. 131365
Author(s):  
Guanyu Yao ◽  
Jun Yu ◽  
Hao Wu ◽  
Zhongzhou Li ◽  
Wenjing Zou ◽  
...  
Keyword(s):  
Room Temperature ◽  
Ammonia Sensor ◽  
Sb Doping ◽  
P Type

scholarly journals Mg and In Codoped p-type AlN Nanowires for pn Junction Realization

Nano Letters ◽  
2019 ◽  
Vol 19 (12) ◽  
pp. 8357-8364 ◽  
Author(s):  
Alexandra-Madalina Siladie ◽  
Gwénolé Jacopin ◽  
Ana Cros ◽  
Nuria Garro ◽  
Eric Robin ◽  
...  
Keyword(s):  
Pn Junction ◽  
P Type

Controlled p-type Sb doping in LPE-grown Hg1−x Cdx Te epilayers

1993 ◽  
Vol 22 (9) ◽  
pp. 1165-1172 ◽  
Author(s):  
Theodore C. Harman
Keyword(s):  
Sb Doping ◽  
P Type

Analog and bipolar resistive switching in pn junction of n-type ZnO nanowires on p-type Si substrate

2013 ◽  
Vol 114 (6) ◽  
pp. 064502 ◽  
Author(s):  
Seung Chang Lee ◽  
Quanli Hu ◽  
Yoon-Jae Baek ◽  
Young Jin Choi ◽  
Chi Jung Kang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Zno Nanowires ◽  
Si Substrate ◽  
Bipolar Resistive Switching ◽  
Pn Junction ◽  
P Type

A new thermoelectric concept using large area PN junctions

2013 ◽  
Vol 1543 ◽  
pp. 3-8 ◽  
Author(s):  
R. Chavez ◽  
A. Becker ◽  
V. Kessler ◽  
M. Engenhorst ◽  
N. Petermann ◽  
...  
Keyword(s):  
Silicon Nanoparticles ◽  
Electrical Contacts ◽  
Large Area ◽  
Charge Generation ◽  
Thermally Induced ◽  
Pn Junction ◽  
In Series ◽  
Working Principle ◽  
Pn Junctions ◽  
P Type

ABSTRACTA new thermoelectric concept using large area silicon PN junctions is experimentally demonstrated. In contrast to conventional thermoelectric generators where the n-type and p-type semiconductors are connected electrically in series and thermally in parallel, we demonstrate a large area PN junction made from densified silicon nanoparticles that combines thermally induced charge generation and separation in a space charge region with the conventional Seebeck effect by applying a temperature gradient parallel to the PN junction. In the proposed concept, the electrical contacts are made at the cold side eliminating the need for contacts at the hot side allowing temperature gradients greater than 100K to be applied. The investigated PN junction devices are produced by stacking n-type and p-type nanopowder prior to a densification process. The nanoparticulate nature of the densified PN junction lowers thermal conductivity and increases the intraband traps density which we propose is beneficial for transport across the PN junction thus enhancing the thermoelectric properties. A fundamental working principle of the proposed concept is suggested, along with characterization of power output and output voltages per temperature difference that are close to those one would expect from a conventional thermoelectric generator.

Photoelectrochemical properties of a well-structured 1.3 nm-thick pn junction crystal

2019 ◽  
Vol 55 (31) ◽  
pp. 4586-4588 ◽  
Author(s):  
Keisuke Awaya ◽  
Akihide Takashiba ◽  
Takaaki Taniguchi ◽  
Michio Koinuma ◽  
Tatsumi Ishihara ◽  
...  
Keyword(s):  
Nickel Hydroxide ◽  
Photoelectrochemical Properties ◽  
Onset Potential ◽  
Pn Junction ◽  
Photoelectrochemical Oxidation ◽  
Pn Junctions ◽  
P Type

A 1.3 nm-thick nickel hydroxide (p-type, 0.5 nm)/titania (n-type, 0.8 nm) pn junction prepared by lamination of nanosheets improved the onset potential for photoelectrochemical oxidation and increased the photooxidation current, indicating that ultrathin pn junctions suppress the recombination of photo-generated carriers.

Sign in / Sign up

Export Citation Format

Share Document