scholarly journals Morphology and electrical characteristics of p-type ZnO microwires with zigzag rough surfaces induced by Sb doping

RSC Advances ◽  
2018 ◽  
Vol 8 (61) ◽  
pp. 35023-35030 ◽  
Author(s):  
Linlin Shi ◽  
Luchao Du ◽  
Yingtian Xu ◽  
Liang Jin ◽  
He Zhang ◽  
...  
Keyword(s):  
Rough Surface ◽  
Doping Concentration ◽  
Rough Surfaces ◽  
Electrical Characteristics ◽  
Sb Doping ◽  
P Type ◽  
Type Conduction

Sb-doped microwires which have a zigzag rough surface demonstrate p-type conduction and enhanced rectifying behavior with increasing Sb doping concentration.

scholarly journals Tuning the Polarity of MoTe2 FETs by Varying the Channel Thickness for Gas-Sensing Applications

Sensors ◽  
2019 ◽  
Vol 19 (11) ◽  
pp. 2551 ◽  
Author(s):  
Asha Rani ◽  
Kyle DiCamillo ◽  
Md Ashfaque Hossain Khan ◽  
Makarand Paranjape ◽  
Mona E. Zaghloul
Keyword(s):  
Schottky Barrier Height ◽  
Gas Sensing ◽  
Field Effect Transistors ◽  
Thickness Variation ◽  
Electrical Characteristics ◽  
Conductivity Type ◽  
Sensing Applications ◽  
Channel Thickness ◽  
P Type ◽  
Type Conduction

In this study, electrical characteristics of MoTe2 field-effect transistors (FETs) are investigated as a function of channel thickness. The conductivity type in FETs, fabricated from exfoliated MoTe2 crystals, switched from p-type to ambipolar to n-type conduction with increasing MoTe2 channel thickness from 10.6 nm to 56.7 nm. This change in flake-thickness-dependent conducting behavior of MoTe2 FETs can be attributed to modulation of the Schottky barrier height and related bandgap alignment. Change in polarity as a function of channel thickness variation is also used for ammonia (NH3) sensing, which confirms the p- and n-type behavior of MoTe2 devices.

Chemical Beam Epitaxy (CBE) and Laser-Enhanced CBE of GaAs Using Tris-Dimethylaminoarsenic

1994 ◽  
Vol 340 ◽  
Author(s):  
H. K. Dong ◽  
N. Y. Li ◽  
C. W. Tu ◽  
M. Geva ◽  
W. C. Mitchel
Keyword(s):  
Substrate Temperature ◽  
Electron Mobility ◽  
Doping Concentration ◽  
Growth Enhancement ◽  
Chemical Beam Epitaxy ◽  
Unintentional Doping ◽  
P Type ◽  
First Time ◽  
Substrate Temperatures ◽  
Type Conduction

ABSTRACTIn this paper, we report chemical beam epitaxy (CBE) of GaAs, and for the first time, Arion laser-assisted CBE using triethylgallium (TEGa) and tris-dimethylaminoarsenic (TDMAAs), a safer alternative to arsine. Samples grown at substrate temperatures above 490° C show n-type conduction, while those grown at lower temperatures show p-type conduction. An unintentional doping concentration of n∼lx1016 cm-3 with an electron mobility of 5200 cm2/V.s at 300 K and 16000 cm2/V.s at 77 K have been achieved. These are the best results reported for GaAs grown with TDMAAs. Laser-assisted CBE of GaAs is studied in the substrate temperature range of 240-550°C. There are two different substrate-temperature regions for laser-enhanced growth, 265 to 340°C and 340 to 440°C, which are believed to be caused by different TEGa decomposition mechanisms. The laser-assisted growth with TDMAAs, compared to AS4 or AsH3, shows a wider range of growth enhancement at low substrate temperatures.

Switching the electrical characteristics of TiO2 from n-type to p-type by ion implantation

2021 ◽  
pp. 150274
Author(s):  
Adriano Panepinto ◽  
Arnaud Krumpmann ◽  
David Cornil ◽  
Jérôme Cornil ◽  
Rony Snyders
Keyword(s):  
Ion Implantation ◽  
Electrical Characteristics ◽  
P Type

scholarly journals Optimization of Sb2S3 Nanocrystal Concentrations in P3HT: PCBM Layers to Improve the Performance of Polymer Solar Cells

Polymers ◽  
2021 ◽  
Vol 13 (13) ◽  
pp. 2152
Author(s):  
E. M. Mkawi ◽  
Y. Al-Hadeethi ◽  
R. S. Bazuhair ◽  
A. S. Yousef ◽  
E. Shalaan ◽  
...  
Keyword(s):  
Solar Cells ◽  
Doping Concentration ◽  
Polymer Solar Cells ◽  
Energy Levels ◽  
Acid Methyl Ester ◽  
Visible Absorption ◽  
Block Polymer ◽  
Coating Method ◽  
Electronic Parameters ◽  
P Type

In this study, polymer solar cells were synthesized by adding Sb2S3 nanocrystals (NCs) to thin blended films with polymer poly(3-hexylthiophene)(P3HT) and [6,6]-phenyl-C61-butyric-acid-methyl-ester (PCBM) as the p-type material prepared via the spin-coating method. The purpose of this study is to investigate the dependence of polymer solar cells’ performance on the concentration of Sb2S3 nanocrystals. The effect of the Sb2S3 nanocrystal concentrations (0.01, 0.02, 0.03, and 0.04 mg/mL) in the polymer’s active layer was determined using different characterization techniques. X-ray diffraction (XRD) displayed doped ratio dependences of P3HT crystallite orientations of P3HT crystallites inside a block polymer film. Introducing Sb2S3 NCs increased the light harvesting and regulated the energy levels, improving the electronic parameters. Considerable photoluminescence quenching was observed due to additional excited electron pathways through the Sb2S3 NCs. A UV–visible absorption spectra measurement showed the relationship between the optoelectronic properties and improved surface morphology, and this enhancement was detected by a red shift in the absorption spectrum. The absorber layer’s doping concentration played a definitive role in improving the device’s performance. Using a 0.04 mg/mL doping concentration, a solar cell device with a glass /ITO/PEDOT:PSS/P3HT-PCBM: Sb2S3:NC/MoO3/Ag structure achieved a maximum power conversion efficiency of 2.72%. These Sb2S3 NCs obtained by solvothermal fabrication blended with a P3HT: PCBM polymer, would pave the way for a more effective design of organic photovoltaic devices.

The Effect of Doping Concentration and Conductivity Type on Preferential Etching of 4H-SiC by Molten KOH

2004 ◽  
Vol 815 ◽  
Author(s):  
Ying Gao ◽  
Zehong Zhang ◽  
Robert Bondokov ◽  
Stanislav Soloviev ◽  
Tangali Sudarshan
Keyword(s):  
Thermal Diffusion ◽  
Basal Plane ◽  
Doping Concentration ◽  
Structural Defects ◽  
Etch Pits ◽  
Conductivity Type ◽  
Isotropic Etching ◽  
Electrochemical Processes ◽  
P Type ◽  
Koh Etching

AbstractMolten KOH etchings were implemented to delineate structural defects in the n- and ptype 4H-SiC samples with different doping concentrations. It was observed that the etch preference is significantly influenced by both the doping concentrations and the conductivity types. The p-type Si-face 4H-SiC substrate has the most preferential etching property, while it is least for n+ samples. It has been clearly demonstrated that the molten KOH etching process involves both chemical and electrochemical processes, during which isotropic etching and preferential etching are competitive. The n+ 4H-SiC substrate was overcompensated via thermal diffusion of boron to p-type and followed by molten KOH etching. Three kinds of etch pits corresponding to threading screw, threading edge, and basal plane dislocations are distinguishably revealed. The same approach was also successfully employed in delineating structural defects in (0001) C-face SiC wafers.

Adjustable electrical characteristics in hybrid Si/PEDOT:PSS core/shell nanowire hetero-junctions

2017 ◽  
Vol 5 (16) ◽  
pp. 3932-3936 ◽  
Author(s):  
Wenhui Lu ◽  
Shuai Zhang ◽  
Enqi Dai ◽  
Bin Miao ◽  
Yiran Peng ◽  
...  
Keyword(s):  
Core Shell ◽  
Electrical Characteristics ◽  
Ohmic Behavior ◽  
P Type

Si/PEDOT:PSS core/shell nanowire hetero-junctions with adjustable electrical characteristics are reported. They exhibit an ohmic behavior ascribed to p-type Si/PEDOT:PSS, whereas n-type Si/PEDOT:PSS displays a rectifying nature.

Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profiling

2014 ◽  
Vol 1634 ◽  
Author(s):  
Luana S. Araujo ◽  
Olivia Berengue ◽  
Maurício Baldan ◽  
Neidenei Ferreira ◽  
João Moro ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Chemical Vapor ◽  
Diamond Surface ◽  
Plasma Cleaning ◽  
Electrical Characteristics ◽  
Capacitance Measurements ◽  
Boron Doped ◽  
Capacitance Voltage ◽  
Surface Adsorbates ◽  
P Type

ABSTRACTDoped diamond films grown by chemical vapor techniques has been used to study hydrogen and oxygen terminated diamond. It is known that the electrical characteristics of metal-diamond interface are strongly affected by the diamond surface features. O2 plasma treatment was used as a cleaning procedure for as grown diamond samples leading to changes in the capacitance measurements after treatment. The alteration in the characteristics of the samples can be attributed to the surface adsorbates like hydrogen and water vapor present in the atmosphere. The results indicates that the O2 plasma treatment was effective in cleaning the surface revealing the expected features of a p-type diamond film.

Reduced Rough-Surface Parametrization for Use With the Discrete-Element Model

2009 ◽  
Vol 131 (2) ◽  
Author(s):  
Stephen T. McClain ◽  
Jason M. Brown
Keyword(s):  
Heat Transfer ◽  
Rough Surface ◽  
Surface Characterization ◽  
Rough Surfaces ◽  
Roughness Element ◽  
Three Dimensional ◽  
Element Model ◽  
Discrete Element ◽  
Diameter Distribution ◽  
Discrete Element Model

The discrete-element model for flows over rough surfaces was recently modified to predict drag and heat transfer for flow over randomly rough surfaces. However, the current form of the discrete-element model requires a blockage fraction and a roughness-element diameter distribution as a function of height to predict the drag and heat transfer of flow over a randomly rough surface. The requirement for a roughness-element diameter distribution at each height from the reference elevation has hindered the usefulness of the discrete-element model and inhibited its incorporation into a computational fluid dynamics (CFD) solver. To incorporate the discrete-element model into a CFD solver and to enable the discrete-element model to become a more useful engineering tool, the randomly rough surface characterization must be simplified. Methods for determining characteristic diameters for drag and heat transfer using complete three-dimensional surface measurements are presented. Drag and heat transfer predictions made using the model simplifications are compared to predictions made using the complete surface characterization and to experimental measurements for two randomly rough surfaces. Methods to use statistical surface information, as opposed to the complete three-dimensional surface measurements, to evaluate the characteristic dimensions of the roughness are also explored.

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