Al2O3/GeOx/Ge gate stacks with low interface trap density fabricated by electron cyclotron resonance plasma postoxidation

2011 ◽  
Vol 98 (11) ◽  
pp. 112902 ◽  
Author(s):  
R. Zhang ◽  
T. Iwasaki ◽  
N. Taoka ◽  
M. Takenaka ◽  
S. Takagi
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Gate Stacks ◽  
Electron Cyclotron Resonance Plasma ◽  
Resonance Plasma

Electron cyclotron resonance plasma etching of InP in CH4/H2/Ar

1990 ◽  
Vol 56 (15) ◽  
pp. 1424-1426 ◽  
Author(s):  
S. J. Pearton ◽  
U. K. Chakrabarti ◽  
A. P. Kinsella ◽  
D. Johnson ◽  
C. Constantine
Keyword(s):  
Plasma Etching ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Electron Cyclotron Resonance Plasma ◽  
Resonance Plasma
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