Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (11¯01) semipolar GaN

2011 ◽  
Vol 98 (5) ◽  
pp. 051902 ◽  
Author(s):  
Z. H. Wu ◽  
T. Tanikawa ◽  
T. Murase ◽  
Y.-Y. Fang ◽  
C. Q. Chen ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Strain Relaxation ◽  
Stacking Fault ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Semipolar Gan

Formation of I2-type basal-plane stacking faults in In0.25Ga0.75N multiple quantum wells grown on a ( 101¯1) semipolar GaN template

2017 ◽  
Vol 110 (2) ◽  
pp. 022105 ◽  
Author(s):  
Yueliang Li ◽  
Haoyuan Qi ◽  
Tobias Meisch ◽  
Matthias Hocker ◽  
Klaus Thonke ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Basal Plane ◽  
Stacking Faults ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Semipolar Gan

Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN

2010 ◽  
Vol 96 (23) ◽  
pp. 231912 ◽  
Author(s):  
Feng Wu ◽  
You-Da Lin ◽  
Arpan Chakraborty ◽  
Hiroaki Ohta ◽  
Steven P. DenBaars ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Stacking Fault ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Long Wavelength

Strain relaxation in high‐speedp‐i‐nphotodetectors with In0.2Ga0.8As/GaAs multiple quantum wells

1993 ◽  
Vol 63 (21) ◽  
pp. 2920-2922 ◽  
Author(s):  
G. Bender ◽  
E. C. Larkins ◽  
H. Schneider ◽  
J. D. Ralston ◽  
P. Koidl
Keyword(s):  
Quantum Wells ◽  
Strain Relaxation ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

FEMTOSECOND SPECTRAL HOLE-BURNING IN GaAs/AlGaAs MULTIPLE QUANTUM WELLS

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-511-C5-515 ◽  
Author(s):  
J. L. OUDAR ◽  
J. DUBARD ◽  
F. ALEXANDRE ◽  
D. HULIN ◽  
A. MIGUS ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Multiple Quantum ◽  
Spectral Hole
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