Formation of I2-type basal-plane stacking faults in In0.25Ga0.75N multiple quantum wells grown on a ( 101¯1) semipolar GaN template
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1987 ◽
Vol 48
(C5)
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pp. C5-511-C5-515
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1987 ◽
Vol 48
(C5)
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pp. C5-239-C5-242
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1992 ◽
Vol 31
(Part 2, No. 3B)
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pp. L313-L315
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1989 ◽
Vol 32
(12)
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pp. 1207-1212
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