Formation of I2-type basal-plane stacking faults in In0.25Ga0.75N multiple quantum wells grown on a ( 101¯1) semipolar GaN template

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Haoyuan Qi ◽  
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T. Tanikawa ◽  
T. Murase ◽  
Y.-Y. Fang ◽  
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J. DUBARD ◽  
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Vol 48 (C5) ◽  
pp. C5-239-C5-242 ◽  
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B. V. SHANABROOK ◽  
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Vol 31 (Part 2, No. 3B) ◽  
pp. L313-L315 ◽  
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