Nonlinear electrical properties of lead‐lanthanum‐titanate thin films deposited by multi‐ion‐beam reactive sputtering

1993 ◽  
Vol 74 (3) ◽  
pp. 1949-1959 ◽  
Author(s):  
G. R. Fox ◽  
S. B. Krupanidhi
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Ion Beam ◽  
Reactive Sputtering ◽  
Lanthanum Titanate

Composition/structure/property relations of multi-ion-beam reactive sputtered lead lanthanum titanate thin films: Part III. Electrical properties

1993 ◽  
Vol 8 (9) ◽  
pp. 2203-2215 ◽  
Author(s):  
G.R. Fox ◽  
S.B. Krupanidhi
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Perovskite Phase ◽  
Ion Beam ◽  
Crystallographic Structure ◽  
Structure Property ◽  
Lanthanum Titanate ◽  
Percolation Effect ◽  
Composition Structure ◽  
High Dielectric

This paper, the third and final of a three part series, presents the electrical properties of postdeposition annealed, lead lanthanum titanate (PLT) thin films deposited by multi-ion-beam reactive sputtering (MIBERS). Also, a model is presented that explains the relations among composition, crystallographic structure, microstructure, and electrical properties of the PLT thin films. Thin films of PLT consisting of the perovskite phase exhibit 〈100〉 textured microstructures. Addition of a critical quantity of excess PbO results in the loss of this 〈100〉 texture, and continuity of the perovskite phase is disrupted while both excess PbO and porosity phases become continuous due to a percolation effect. Films with textured microstructures consisting of a continuous perovskite phase exhibit relatively high dc resistivities, high dielectric permittivities, and high remanent polarizations. At the transition between textured and nontextured microstructures, a discontinuous drop in the electrical properties occurs due to the ensuing continuity of the excess PbO and porosity. These composition-induced changes in the electrical properties were quantitatively modeled by applying a simple mixing rule model to the microstructure model developed in Part II of this series.

Optical and electrical properties of p-type zinc oxide thin films synthesized by ion beam assisted deposition

2005 ◽  
Vol 492 (1-2) ◽  
pp. 203-206 ◽  
Author(s):  
Zhi Yan ◽  
Zhi Tang Song ◽  
Wei Li Liu ◽  
Qing Wan ◽  
Fu Min Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Electrical Properties ◽  
Ion Beam ◽  
Optical And Electrical Properties ◽  
Oxide Thin Films ◽  
Ion Beam Assisted Deposition ◽  
P Type

Peculiarities of nucleation of PbOx thin films during ion-beam reactive sputtering

1996 ◽  
Vol 153 (2) ◽  
pp. K1-K4
Author(s):  
E. V. Sviridov ◽  
D. Q. Xiao ◽  
W. B. Pezg ◽  
Z. Shi ◽  
J. G. Zhu
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Reactive Sputtering

scholarly journals Reactive sputtering deposition of SiO2 thin films

2008 ◽  
Vol 73 (1) ◽  
pp. 121-126
Author(s):  
Ivan Radovic ◽  
Yves Serruys ◽  
Yves Limoge ◽  
Natasa Bibic
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Reactive Sputtering ◽  
Beam Current ◽  
Sputtering Deposition ◽  
Gas Cylinder ◽  
High Purity Silicon

SiO2 layers were deposited in a UHV chamber by 1 keV Ar+ ion sputtering from a high purity silicon target, using different values of the oxygen partial pressure (5?10-6-2?10-4 mbar) and of the ion beam current on the target (1.67-6.85 mA). The argon partial pressure during operation of the ion gun was 1?10-3 mbar. The substrate temperature was held at 550?C and the films were deposited to a thickness of 12.5-150 nm, at a rate from 0.0018-0.035 nm s-1. Structural characterization of the deposited thin films was performed by Rutherford backscattering spectrometry (RBS analysis). Reactive sputtering was proved to be efficient for the deposition of silica at 550?C, an oxygen partial pressure of 2?10-4 mbar (ion beam current on the target of 5 mA) or, at a lower deposition rate, ion beam current of 1.67 mA and an oxygen partial pressure of 6?10-5 mbar. One aspect of these investigations was to study the consumption of oxygen from the gas cylinder, which was found to be lower for higher deposition rates.

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