Impact ionization in GaAs metal–semiconductor field‐effect transistors with a lightly doped drain structure and an Al0.2Ga0.8As/GaAs heterobuffer layer

Junzi Haruyama; Humiaki Katano

doi:10.1063/1.358570

Impact ionization in GaAs metal–semiconductor field‐effect transistors with a lightly doped drain structure and an Al0.2Ga0.8As/GaAs heterobuffer layer

Journal of Applied Physics ◽

10.1063/1.358570 ◽

1995 ◽

Vol 77 (8) ◽

pp. 3913-3918 ◽

Cited By ~ 3

Author(s):

Junzi Haruyama ◽

Humiaki Katano

Keyword(s):

Field Effect ◽

Impact Ionization ◽

Field Effect Transistors ◽

Lightly Doped Drain

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Vertical surround-gated silicon nanowire impact ionization field-effect transistors

Applied Physics Letters ◽

10.1063/1.2720640 ◽

2007 ◽

Vol 90 (14) ◽

pp. 142110 ◽

Cited By ~ 77

Author(s):

M. T. Björk ◽

O. Hayden ◽

H. Schmid ◽

H. Riel ◽

W. Riess

Keyword(s):

Field Effect ◽

Impact Ionization ◽

Field Effect Transistors ◽

Silicon Nanowire

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Numerical Study of Lightly Doped Drain and Source Carbon Nanotube Field Effect Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2010.2041282 ◽

2010 ◽

Vol 57 (4) ◽

pp. 765-771 ◽

Cited By ~ 53

Author(s):

Reza Yousefi ◽

Kamyar Saghafi ◽

Mohammad Kazem Moravvej-Farshi

Keyword(s):

Carbon Nanotube ◽

Field Effect ◽

Field Effect Transistors ◽

Numerical Study ◽

Lightly Doped Drain

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Simple Model for Gate-Voltage Dependent Parasitic Resistancein Short Channel Lightly Doped Drain Metal Oxide Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.30.l535 ◽

1991 ◽

Vol 30 (Part 2, No. 4A) ◽

pp. L535-L537 ◽

Cited By ~ 2

Author(s):

Jung-Il Lee ◽

Myung-Bok Lee ◽

Sang Young Lee ◽

Kwang Nham Kang ◽

Kyung Sik Yoon

Keyword(s):

Simple Model ◽

Metal Oxide ◽

Gate Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Short Channel ◽

Voltage Dependent ◽

Lightly Doped Drain

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Novel Method of Intrinsic Characteristic Extraction in Lightly Doped Drain Metal Oxide Semiconductor Field Effect Transistors for Accurate Device Modeling

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.918 ◽

2004 ◽

Vol 43 (3) ◽

pp. 918-924 ◽

Cited By ~ 1

Author(s):

Kenshi Tada ◽

Toshimasa Matsuoka ◽

Kenji Taniguchi ◽

Kazuhiro Maeda ◽

Tamotsu Sakai ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Device Modeling ◽

Characteristic Extraction ◽

Novel Method ◽

Lightly Doped Drain ◽

Intrinsic Characteristic

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Steep Switching Characteristics of Partially Gated p+–n+–i–n+ Silicon-Nanowire Transistors

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2021.19398 ◽

2021 ◽

Vol 21 (8) ◽

pp. 4330-4335

Author(s):

Jaemin Son ◽

Doohyeok Lim ◽

Sangsig Kim

Keyword(s):

Field Effect ◽

Impact Ionization ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Operation Mode ◽

Feedback Loops ◽

Charge Carriers ◽

Electrical Characteristics ◽

Nanowire Transistors ◽

Switching Characteristics

In this study, we examine the electrical characteristics of p+–n+–i–n+ silicon-nanowire field-effect transistors with partially gated channels. The silicon-nanowire field-effect transistors operate with barrier height modulation through positive feedback loops of charge carriers triggered by impact ionization. Our field-effect transistors exhibit outstanding switching characteristics, with an on current of ˜10−4 A, an on/off current ratio of ˜106, and a point subthreshold swing of ˜23 mV/dec. Moreover, the devices inhibit ambipolar characteristics because of the use of the partially gated structure and feature the p-channel operation mode.

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A Physics-Based Short-Channel Current-Voltage Model for Lightly-Doped-Drain Metal-Oxide-Semiconductor Field-Effect-Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.3448 ◽

1997 ◽

Vol 36 (Part 1, No. 6A) ◽

pp. 3448-3459 ◽

Cited By ~ 5

Author(s):

Man-Chun Hu ◽

Sheng-Lyang Jang ◽

Chwan-Gwo Chyau

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Short Channel ◽

Channel Current ◽

Current Voltage ◽

Lightly Doped Drain

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Behaviors of gate induced drain leakage stress in lightly doped drain n-channel metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.3250435 ◽

2009 ◽

Vol 95 (15) ◽

pp. 152107 ◽

Cited By ~ 8

Author(s):

X. H. Ma ◽

Y. R. Cao ◽

H. X. Gao ◽

H. F. Chen ◽

Y. Hao

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Lightly Doped Drain

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Radio Frequency Power Performance Enhancement for Asymmetric Lightly Doped Drain Metal–Oxide–Semiconductor Field-Effect Transistors on SiC Substrate

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.014104 ◽

2010 ◽

Vol 49 (1) ◽

pp. 014104

Author(s):

Tsu Chang ◽

Hsuan-ling Kao ◽

S. L. Liu ◽

Joseph D. S. Deng ◽

K. Y. Horng ◽

...

Keyword(s):

Metal Oxide ◽

Radio Frequency ◽

Field Effect ◽

Performance Enhancement ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Power Performance ◽

Lightly Doped Drain ◽

Frequency Power

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Impact Ionization Behavior in Bulk Fin Field Effect Transistors with Fin Body Width and Bias Conditions

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.3347 ◽

2007 ◽

Vol 46 (6A) ◽

pp. 3347-3350 ◽

Cited By ~ 3

Author(s):

Sang-Yun Kim ◽

Young Min Kim ◽

Kwang-Ho Baek ◽

Ki-Heung Park ◽

Kyoung-Rok Han ◽

...

Keyword(s):

Field Effect ◽

Impact Ionization ◽

Field Effect Transistors ◽

Body Width ◽

Ionization Behavior

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Impact Ionization in Junctionless Field-Effect Transistors

Junctionless Field-Effect Transistors ◽

10.1002/9781119523543.ch6 ◽

2019 ◽

pp. 255-279

Keyword(s):

Field Effect ◽

Impact Ionization ◽

Field Effect Transistors

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