Reverse‐biased performance of a molecular‐beam‐epitaxial‐grown AlGaAs/GaAs high‐power optothyristor for pulsed power‐switching applications

1993 ◽  
Vol 74 (8) ◽  
pp. 5225-5230 ◽  
Author(s):  
J. H. Zhao ◽  
T. Burke ◽  
M. Weiner ◽  
A. Chin ◽  
J. M. Ballingall
Keyword(s):  
High Power ◽  
Molecular Beam ◽  
Pulsed Power ◽  
Power Switching ◽  
Molecular Beam Epitaxial

A novel high power optothyristor based on AlGaAs/GaAs for pulsed power-switching applications

1994 ◽  
Vol 41 (5) ◽  
pp. 819-825 ◽  
Author(s):  
J.H. Zhao ◽  
T. Burke ◽  
M. Weiner ◽  
A. Chin ◽  
J.M. Ballingall
Keyword(s):  
High Power ◽  
Pulsed Power ◽  
Power Switching

Molecular Beam Epitaxial Growth of High Power Quantum Dot Super-Luminecent Diodes

2007 ◽  
Vol 46 (4B) ◽  
pp. 2418-2420 ◽  
Author(s):  
Sumon K. Ray ◽  
Hui Y. Liu ◽  
Tom L. Choi ◽  
Kristian M. Groom ◽  
San L. Liew ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Epitaxial Growth ◽  
High Power ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Role of substrate temperature in molecular‐beam epitaxial growth of high‐power GaAs/AlGaAs lasers

1992 ◽  
Vol 60 (4) ◽  
pp. 416-418 ◽  
Author(s):  
S. V. Iyer ◽  
H. P. Meier ◽  
Shlomo Ovadia ◽  
C. Parks ◽  
D. J. Arent ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Epitaxial Growth ◽  
High Power ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Study of SiC Device for Pulsed Power Switching Circuit

2019 ◽  
Vol 139 (8) ◽  
pp. 345-350
Author(s):  
Toru Tagawa ◽  
Tomohiko Yamashita ◽  
Takashi Sakugawa ◽  
Sunao Katsuki ◽  
Kenzi Hukuda ◽  
...  
Keyword(s):  
Pulsed Power ◽  
Switching Circuit ◽  
Power Switching

Magnetic anisotropy and microstructure in molecular beam epitaxial FePt (110)/MgO (110)

1998 ◽  
Vol 84 (2) ◽  
pp. 934-939 ◽  
Author(s):  
R. F. C. Farrow ◽  
D. Weller ◽  
R. F. Marks ◽  
M. F. Toney ◽  
David J. Smith ◽  
...  
Keyword(s):  
Magnetic Anisotropy ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial
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