Role of substrate temperature in molecular‐beam epitaxial growth of high‐power GaAs/AlGaAs lasers

S. V. Iyer; H. P. Meier; Shlomo Ovadia; C. Parks; D. J. Arent; W. Walter

doi:10.1063/1.106620

Role of substrate temperature in molecular‐beam epitaxial growth of high‐power GaAs/AlGaAs lasers

Applied Physics Letters ◽

10.1063/1.106620 ◽

1992 ◽

Vol 60 (4) ◽

pp. 416-418 ◽

Cited By ~ 15

Author(s):

S. V. Iyer ◽

H. P. Meier ◽

Shlomo Ovadia ◽

C. Parks ◽

D. J. Arent ◽

...

Keyword(s):

Substrate Temperature ◽

Epitaxial Growth ◽

High Power ◽

Molecular Beam ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Molecular beam epitaxial growth and optical characterization of AlGaN nanowires with reduced substrate temperature

AIP Advances ◽

10.1063/1.5140572 ◽

2020 ◽

Vol 10 (2) ◽

pp. 025022 ◽

Cited By ~ 4

Author(s):

Y. Zhong ◽

E. Berikaa ◽

J. Lu ◽

X. Yin ◽

S. Zhao

Keyword(s):

Substrate Temperature ◽

Epitaxial Growth ◽

Molecular Beam ◽

Optical Characterization ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Low substrate temperature and low As-pressure growth concept for the molecular beam epitaxial growth of (Ga,In)(N,As) multiple quantum wells

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2006.09.009 ◽

2007 ◽

Vol 301-302 ◽

pp. 529-533 ◽

Cited By ~ 5

Author(s):

Fumitaro Ishikawa ◽

Achim Trampert ◽

Klaus H. Ploog

Keyword(s):

Substrate Temperature ◽

Quantum Wells ◽

Epitaxial Growth ◽

Molecular Beam ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Molecular Beam Epitaxial Growth of High Power Quantum Dot Super-Luminecent Diodes

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.2418 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 2418-2420 ◽

Cited By ~ 6

Author(s):

Sumon K. Ray ◽

Hui Y. Liu ◽

Tom L. Choi ◽

Kristian M. Groom ◽

San L. Liew ◽

...

Keyword(s):

Quantum Dot ◽

Epitaxial Growth ◽

High Power ◽

Molecular Beam ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Molecular beam epitaxial growth of In1−x−yGaxAlyAs: effects of substrate temperature and V/III ratio

Materials Chemistry and Physics ◽

10.1016/s0254-0584(99)00031-0 ◽

1999 ◽

Vol 59 (1) ◽

pp. 20-25 ◽

Cited By ~ 2

Author(s):

S.F Yoon ◽

P.H Zhang ◽

H.Q Zheng ◽

K Radhakrishnan

Keyword(s):

Substrate Temperature ◽

Epitaxial Growth ◽

Molecular Beam ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Molecular beam epitaxial growth of SmBa2Cu3O7−δ thin films and effect of substrate temperature on the surface roughness

Thin Solid Films ◽

10.1016/0040-6090(94)90190-2 ◽

1994 ◽

Vol 250 (1-2) ◽

pp. 232-237 ◽

Cited By ~ 4

Author(s):

W. Schindler ◽

P. van Haβelt ◽

J. Markl ◽

P. Bauer ◽

P. Tontsch ◽

...

Keyword(s):

Thin Films ◽

Surface Roughness ◽

Substrate Temperature ◽

Epitaxial Growth ◽

Molecular Beam ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Influence of substrate temperature and InAs mole fraction on the incorporation of indium during molecular-beam epitaxial growth of InGaAs single quantum wells on GaAs

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.584432 ◽

1989 ◽

Vol 7 (1) ◽

pp. 111 ◽

Cited By ~ 38

Author(s):

D. C. Radulescu

Keyword(s):

Substrate Temperature ◽

Quantum Wells ◽

Epitaxial Growth ◽

Mole Fraction ◽

Molecular Beam ◽

Single Quantum ◽

Molecular Beam Epitaxial ◽

Influence Of Substrate ◽

Molecular Beam Epitaxial Growth

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The role of excess arsenic during the metalorganic molecular beam epitaxial growth of GaAs from trimethylgallium and As2

Journal of Crystal Growth ◽

10.1016/0022-0248(94)90390-5 ◽

1994 ◽

Vol 136 (1-4) ◽

pp. 99-103 ◽

Cited By ~ 4

Author(s):

T. Kaneko ◽

O. Naji ◽

T.S. Jones ◽

B.A. Joyce

Keyword(s):

Epitaxial Growth ◽

Molecular Beam ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Improved GaAs substrate temperature measurement during molecular-beam epitaxial growth

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.584351 ◽

1988 ◽

Vol 6 (3) ◽

pp. 842 ◽

Cited By ~ 24

Author(s):

S. L. Wright

Keyword(s):

Substrate Temperature ◽

Temperature Measurement ◽

Epitaxial Growth ◽

Gaas Substrate ◽

Molecular Beam ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Molecular beam epitaxial growth of SrCu[sub 2]O[sub 3]: Metastable structures and the role of epitaxy

Journal of Applied Physics ◽

10.1063/1.1466876 ◽

2002 ◽

Vol 91 (10) ◽

pp. 6371 ◽

Cited By ~ 13

Author(s):

N. J. C. Ingle ◽

R. H. Hammond ◽

M. R. Beasley

Keyword(s):

Epitaxial Growth ◽

Molecular Beam ◽

Molecular Beam Epitaxial ◽

Metastable Structures ◽

Molecular Beam Epitaxial Growth

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Computer simulations of the role of group V molecular reactions at steps during molecular beam epitaxial growth of III-V semiconductors

Journal of Crystal Growth ◽

10.1016/0022-0248(87)90073-x ◽

1987 ◽

Vol 80 (2) ◽

pp. 275-288 ◽

Cited By ~ 23

Author(s):

M. Thomsen ◽

A. Madhukar

Keyword(s):

Epitaxial Growth ◽

Computer Simulations ◽

Molecular Beam ◽

Group V ◽

Molecular Beam Epitaxial ◽

Molecular Reactions ◽

Molecular Beam Epitaxial Growth

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