Correlation between the nanoscale electrical and morphological properties of crystallized hafnium oxide-based metal oxide semiconductor structures

V. Iglesias; M. Porti; M. Nafría; X. Aymerich; P. Dudek; T. Schroeder; G. Bersuker

doi:10.1063/1.3533257

Correlation between the nanoscale electrical and morphological properties of crystallized hafnium oxide-based metal oxide semiconductor structures

Applied Physics Letters ◽

10.1063/1.3533257 ◽

2010 ◽

Vol 97 (26) ◽

pp. 262906 ◽

Cited By ~ 45

Author(s):

V. Iglesias ◽

M. Porti ◽

M. Nafría ◽

X. Aymerich ◽

P. Dudek ◽

...

Keyword(s):

Metal Oxide ◽

Hafnium Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Morphological Properties ◽

Semiconductor Structures

Download Full-text

Comparative study of tunneling currents through silicon dioxide and high-κ dielectric hafnium oxide partly embedded with nanocrystals and nanotubes in metal oxide semiconductor structures

Journal of Applied Physics ◽

10.1063/1.2963705 ◽

2008 ◽

Vol 104 (3) ◽

pp. 034313 ◽

Cited By ~ 6

Author(s):

Gargi Chakraborty ◽

C. K. Sarkar

Keyword(s):

Metal Oxide ◽

Comparative Study ◽

Silicon Dioxide ◽

Hafnium Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Tunneling Currents

Download Full-text

Spatially Resolved Transport Studies and Microscopy of Ultrathin Metal-Oxide-Semiconductor Structures

10.21236/ada329531 ◽

1997 ◽

Author(s):

R. Ludeke

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Spatially Resolved ◽

Transport Studies

Download Full-text

Damage effect of hafnium oxide gate dielectric based metal–oxide–semiconductor structure under gamma-ray irradiation

AIP Advances ◽

10.1063/5.0048080 ◽

2021 ◽

Vol 11 (6) ◽

pp. 065304

Author(s):

Man Ding ◽

Xin Liu

Keyword(s):

Metal Oxide ◽

Hafnium Oxide ◽

Gamma Ray ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Semiconductor Structure ◽

Oxide Semiconductor ◽

Damage Effect ◽

Gamma Ray Irradiation ◽

Metal Oxide Semiconductor Structure

Download Full-text

High Performance β-Ga2O3 Solar-Blind Metal–Oxide–Semiconductor Field-Effect Phototransistor With Hafnium Oxide Gate Dielectric Process

IEEE Electron Device Letters ◽

10.1109/led.2021.3061509 ◽

2021 ◽

Vol 42 (4) ◽

pp. 545-548

Author(s):

Zhe Li ◽

Zhaoqing Feng ◽

Yu Xu ◽

Qian Feng ◽

Weidong Zhu ◽

...

Keyword(s):

Metal Oxide ◽

Hafnium Oxide ◽

Field Effect ◽

High Performance ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Solar Blind

Download Full-text

Effects of Hafnium Oxide on Surface Potential and Drain Current Models for Subthreshold Short Channel Metal–Oxide–Semiconductor-Field-Effect-Transistor

Transactions on Electrical and Electronic Materials ◽

10.1007/s42341-020-00181-4 ◽

2020 ◽

Vol 21 (3) ◽

pp. 339-347 ◽

Cited By ~ 3

Author(s):

N. P. Maity ◽

Reshmi Maity ◽

Subir Dutta ◽

Subhasish Deb ◽

K. Girija Sravani ◽

...

Keyword(s):

Metal Oxide ◽

Surface Potential ◽

Hafnium Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Short Channel ◽

Effect Transistor

Download Full-text

Characterization of Stacked Hafnium Oxide (HfO2)/Silicon Dioxide (SiO2) Metal-Oxide-Semiconductor (MOS) Tunneling Temperature Sensors

ECS Transactions ◽

10.1149/1.3206635 ◽

2019 ◽

Vol 25 (6) ◽

pp. 361-370

Author(s):

Chih-Yao Wang ◽

Jenn-Gwo Hwu

Keyword(s):

Metal Oxide ◽

Silicon Dioxide ◽

Hafnium Oxide ◽

Temperature Sensors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

Download Full-text

Dominant Device Instability Mechanism in Scaled Metal–Oxide–Semiconductor Field-Effect Transistors with Hafnium Oxide Dielectric

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.091404 ◽

2009 ◽

Vol 48 (9) ◽

pp. 091404 ◽

Cited By ~ 2

Author(s):

Rino Choi ◽

Tea Wan Kim ◽

Hokyung Park ◽

Byoung Hun Lee

Keyword(s):

Metal Oxide ◽

Hafnium Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Instability Mechanism

Download Full-text

Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

Applied Physics Letters ◽

10.1063/1.4907861 ◽

2015 ◽

Vol 106 (5) ◽

pp. 051605 ◽

Cited By ~ 52

Author(s):

Shenghou Liu ◽

Shu Yang ◽

Zhikai Tang ◽

Qimeng Jiang ◽

Cheng Liu ◽

...

Keyword(s):

Metal Oxide ◽

Interfacial Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures

Download Full-text

Towards a first-principles simulation and current-voltage characteristic of atomistic metal-oxide–semiconductor structures

Physical Review B ◽

10.1103/physrevb.64.125306 ◽

2001 ◽

Vol 64 (12) ◽

Cited By ~ 37

Author(s):

Alexander A. Demkov ◽

Xiaodong Zhang ◽

D. A. Drabold

Keyword(s):

Metal Oxide ◽

First Principles ◽

Voltage Characteristic ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Current Voltage Characteristic ◽

Semiconductor Structures ◽

Current Voltage

Download Full-text

Effects of Successive Annealing of Oxides on Electrical Characteristics of Silicon Carbide Metal-Oxide-Semiconductor Structures

Materials Science Forum ◽

10.4028/www.scientific.net/msf.389-393.1009 ◽

2002 ◽

Vol 389-393 ◽

pp. 1009-1012 ◽

Cited By ~ 4

Author(s):

Masahito Yoshikawa ◽

Mirei Satoh ◽

Takeshi Ohshima ◽

Hisayoshi Itoh

Keyword(s):

Silicon Carbide ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Semiconductor Structures

Download Full-text