Ultimate accuracy of single‐electron dc current standards

1993 ◽  
Vol 73 (3) ◽  
pp. 1297-1308 ◽  
Author(s):  
D. V. Averin ◽  
A. A. Odintsov ◽  
S. V. Vyshenskii
Keyword(s):  
Single Electron ◽  
Dc Current ◽  
Current Standards

scholarly journals SENECA: a New Program for the Analysis of Single-Electron Devices

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 57-60 ◽  
Author(s):  
L. R. C. Fonseca ◽  
A. N. Korotkov ◽  
K. K. Likharev
Keyword(s):  
Thermal Activation ◽  
Numerical Study ◽  
Single Electron ◽  
Electron Systems ◽  
Small Deviations ◽  
Finite Speed ◽  
Macroscopic Quantum Tunneling ◽  
Single Electron Devices ◽  
Dc Current ◽  
Hybrid Circuit

We describe a new and efficient method for numerical study of the dynamics and statistics of single-electron systems presenting arbitrary combinations of small tunnel junctions, capacitances, and voltage sources. The method is based on the numerical solution of a master equation describing the time evolution of the probabilities of the electric charge states of the system, with iterative refining of the operational set of states. The method is able to describe very small deviations from the “classical” behavior of a system, due to finite speed of applied signals, thermal activation, and macroscopic quantum tunneling of charge (cotunneling). As an illustration, we briefly study the leakage rate in single-electron traps and the accuracy of several devices (turnstile, pump, and a hybrid circuit) suitable as standards of dc current.

ROOM-TEMPERATURE COULOMB OSCILLATION OF Ni–Nb–Zr–H GLASSY ALLOY

2010 ◽  
Vol 24 (22) ◽  
pp. 2289-2293 ◽  
Author(s):  
MIKIO FUKUHARA ◽  
RYO SATO ◽  
TETSU SUZUKI ◽  
AKIHISA INOUE
Keyword(s):  
Room Temperature ◽  
Field Effect Transistor ◽  
Glassy Alloy ◽  
Three Dimensional ◽  
Drain Current ◽  
Coulomb Oscillation ◽  
Drain Bias ◽  
Effect Transistor ◽  
Dc Current ◽  
Current Standards

The Ids–Vg characteristics of the aluminum-oxide glassy alloy ( Ni 0.36 Nb 0.24 Zr 0.40)90- H 10 field-effect transistor (GAFET) for gate–drain bias voltage from -50 to +50 μV were measured at room temperature. We observed four kinds of drain current oscillations for gate voltage at two-current plateau regions of -20~-15 and +35~+40 μV. The transistor showed the three-dimensional Coulomb diamond structure. From DC current standards I=ef, we get f=256 GHz for the first peak, being tunneling of one electron.

scholarly journals Optimization of asymmetric single-electron transistor generating ac-induced dc current

2007 ◽  
Vol 4 (11) ◽  
pp. 345-350
Author(s):  
Yoshinao Mizugaki ◽  
Akio Kawai ◽  
Masataka Moriya ◽  
Kouichi Usami ◽  
Tadayuki Kobayashi ◽  
...  
Keyword(s):  
Single Electron ◽  
Single Electron Transistor ◽  
Dc Current

scholarly journals Radio Frequency Reflectometry of Single-Electron Box Arrays for Nanoscale Voltage Sensing Applications

2020 ◽  
Vol 10 (24) ◽  
pp. 8797
Author(s):  
Thomas A. Zirkle ◽  
Matthew J. Filmer ◽  
Jonathan Chisum ◽  
Alexei O. Orlov ◽  
Eva Dupont-Ferrier ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Coulomb Blockade ◽  
Electron Tunneling ◽  
Signal To Noise Ratio ◽  
Single Electron ◽  
Practical Applications ◽  
Operation Temperature ◽  
Sensing Applications ◽  
Complex Admittance ◽  
Dc Current

Single-electron tunneling transistors (SETs) and boxes (SEBs) exploit the phenomenon of Coulomb blockade to achieve unprecedented charge sensitivities. Single-electron boxes, however, despite their simplicity compared to SETs, have rarely been used for practical applications. The main reason for that is that unlike a SET where the gate voltage controls conductance between the source and the drain, an SEB is a two terminal device that requires either an integrated SET amplifier or high-frequency probing of its complex admittance by means of radio frequency reflectometry (RFR). The signal to noise ratio (SNR) for a SEB is small, due to its much lower admittance compared to a SET and thus matching networks are required for efficient coupling ofSEBs to an RFR setup. To boost the signal strength by a factor of N (due to a random offset charge) SEBs can be connected in parallel to form arrays sharing common gates and sources. The smaller the size of the SEB, the larger the charging energy of a SEB enabling higher operation temperature, and using devices with a small footprint (<0.01 µm2), a large number of devices (>1000) can be assembled into an array occupying just a few square microns. We show that it is possible to design SEB arrays that may compete with an SET in terms of sensitivity. In this, we tested SETs using RF reflectometry in a configuration with no DC through path (“DC-decoupled SET” or DCD SET) along with SEBs connected to the same matching network. The experiment shows that the lack of a path for a DC current makes SEBs and DCD SETs highly electrostatic discharge (ESD) tolerant, a very desirable feature for applications. We perform a detailed analysis of experimental data on SEB arrays of various sizes and compare it with simulations to devise several ways for practical applications of SEB arrays and DCD SETs.

A numerical study of the accuracy of single‐electron current standards

1996 ◽  
Vol 79 (12) ◽  
pp. 9155-9165 ◽  
Author(s):  
L. R. C. Fonseca ◽  
A. N. Korotkov ◽  
K. K. Likharev
Keyword(s):  
Numerical Study ◽  
Single Electron ◽  
Electron Current ◽  
Current Standards

Evaluation of single-electron movies of glutamine synthetase molecules

1983 ◽  
Vol 41 ◽  
pp. 280-281
Author(s):  
W. Kunath ◽  
E. Zeitler ◽  
M. Kessel
Keyword(s):  
Electron Microscope ◽  
Glutamine Synthetase ◽  
Electron Irradiation ◽  
Structural Damage ◽  
Structural Changes ◽  
Single Electron ◽  
Continuous Series ◽  
Digital Recording ◽  
Recording Device ◽  
Low Exposure

The features of digital recording of a continuous series (movie) of singleelectron TV frames are reported. The technique is used to investigate structural changes in negatively stained glutamine synthetase molecules (GS) during electron irradiation and, as an ultimate goal, to look for the molecules' “undamaged” structure, say, after a 1 e/Å2 dose.The TV frame of fig. la shows an image of 5 glutamine synthetase molecules exposed to 1/150 e/Å2. Every single electron is recorded as a unit signal in a 256 ×256 field. The extremely low exposure of a single TV frame as dictated by the single-electron recording device including the electron microscope requires accumulation of 150 TV frames into one frame (fig. lb) thus achieving a reasonable compromise between the conflicting aspects of exposure time per frame of 3 sec. vs. object drift of less than 1 Å, and exposure per frame of 1 e/Å2 vs. rate of structural damage.

Single-electron sensitivity with a lens-coupled CCD camera

1993 ◽  
Vol 51 ◽  
pp. 642-643
Author(s):  
G.Y. Fan ◽  
Bruce Mrosko ◽  
Mark H. Ellisman
Keyword(s):  
Focal Length ◽  
Thick Layer ◽  
Ccd Camera ◽  
Single Electron ◽  
Bottom Flange ◽  
X Rays ◽  
Red Phosphor ◽  
Ccd Detector ◽  
Lens Assembly ◽  
Efficient Coupling

A lens coupled CCD camera showing single electron sensitivity has been built for TEM applications. The design is illustrated in Fig. 1. The bottom flange of a JEM-4000EX microscope is replaced by a special flange which carries a large rectangular leaded glass window, 22 mm thick. A 20 μm thick layer of red phosphor is coated on the window, and the entire window is sputter-coated with a thin layer of Au/Pt. A two-lens relay system is used to provide efficient coupling between the image on the phosphor scintillator and the CCD imager. An f1.0 lens (Goerz optical) with front focal length 71.6 mm is used as the collector. A mirror prism, of the Amici type, is used to "bend" the optical path by 90° to prevent X-rays which may penetrate the leaded glass from hitting the CCD detector. Images may be relayed directly to the camera (1:1) or demagnified by a factor of up to 3:1 by moving the lens assembly.

Sensing of dynamic charge states using single-electron tunneling transistors

1998 ◽  
Vol 168 (2) ◽  
pp. 219
Author(s):  
V.A. Krupenin ◽  
S.V. Lotkhov ◽  
H. Scherer ◽  
A.B. Zorin ◽  
F.-J. Ahlers ◽  
...  
Keyword(s):  
Electron Tunneling ◽  
Single Electron ◽  
Single Electron Tunneling ◽  
Dynamic Charge ◽  
Charge States

Improvement of Single-Electron Digital Logic Gates by Utilizing Input Discretizers

2016 ◽  
Vol E99.C (2) ◽  
pp. 285-292 ◽  
Author(s):  
Tran THI THU HUONG ◽  
Hiroshi SHIMADA ◽  
Yoshinao MIZUGAKI
Keyword(s):  
Logic Gates ◽  
Single Electron ◽  
Digital Logic
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