A numerical study of the accuracy of single‐electron current standards

1996 ◽  
Vol 79 (12) ◽  
pp. 9155-9165 ◽  
Author(s):  
L. R. C. Fonseca ◽  
A. N. Korotkov ◽  
K. K. Likharev
Keyword(s):  
Numerical Study ◽  
Single Electron ◽  
Electron Current ◽  
Current Standards

Ultimate accuracy of single‐electron dc current standards

1993 ◽  
Vol 73 (3) ◽  
pp. 1297-1308 ◽  
Author(s):  
D. V. Averin ◽  
A. A. Odintsov ◽  
S. V. Vyshenskii
Keyword(s):  
Single Electron ◽  
Dc Current ◽  
Current Standards

scholarly journals SENECA: a New Program for the Analysis of Single-Electron Devices

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 57-60 ◽  
Author(s):  
L. R. C. Fonseca ◽  
A. N. Korotkov ◽  
K. K. Likharev
Keyword(s):  
Thermal Activation ◽  
Numerical Study ◽  
Single Electron ◽  
Electron Systems ◽  
Small Deviations ◽  
Finite Speed ◽  
Macroscopic Quantum Tunneling ◽  
Single Electron Devices ◽  
Dc Current ◽  
Hybrid Circuit

We describe a new and efficient method for numerical study of the dynamics and statistics of single-electron systems presenting arbitrary combinations of small tunnel junctions, capacitances, and voltage sources. The method is based on the numerical solution of a master equation describing the time evolution of the probabilities of the electric charge states of the system, with iterative refining of the operational set of states. The method is able to describe very small deviations from the “classical” behavior of a system, due to finite speed of applied signals, thermal activation, and macroscopic quantum tunneling of charge (cotunneling). As an illustration, we briefly study the leakage rate in single-electron traps and the accuracy of several devices (turnstile, pump, and a hybrid circuit) suitable as standards of dc current.

scholarly journals Precision measurement of single-electron current with quantized Hall array resistance and Josephson voltage

Metrologia ◽  
2020 ◽  
Vol 57 (6) ◽  
pp. 065025
Author(s):  
Myung-Ho Bae ◽  
Dong-Hun Chae ◽  
Mun-Seog Kim ◽  
Bum-Kyu Kim ◽  
Suk-In Park ◽  
...  
Keyword(s):  
Precision Measurement ◽  
Single Electron ◽  
Electron Current

A self-referenced single-electron current source

2014 ◽  
Author(s):  
Frank Hohls ◽  
Lukas Fricke ◽  
Michael Wulf ◽  
Bernd Kaestner ◽  
Philipp Mirovsky ◽  
...  
Keyword(s):  
Current Source ◽  
Single Electron ◽  
Electron Current

scholarly journals Three-Dimensional S-Matrix Simulation of Single-Electron Resonant Tunnelling Through Random Ionised Donor States

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 103-106
Author(s):  
Hiroshi Mizuta
Keyword(s):  
Numerical Study ◽  
Transmission Rate ◽  
Three Dimensional ◽  
Single Electron ◽  
Resonant Tunnelling ◽  
Total Transmission ◽  
Single Donor ◽  
S Matrix ◽  
Donor States ◽  
Current Steps

This paper presents a numerical study of single-electron resonant tunnelling (RT) assisted by a few ionised donors in a laterally-confined resonant tunnelling diode (LCRTD). The 3D multi-mode S-matrix simulation is performed newly introducing the scattering potential of discrete impurities. With a few ionised donors being placed, the calculated energy-dependence of the total transmission rate shows new resonances which are donor-configuration dependent. Visualised electron probability density reveals that these resonances originate in RT via single-donor-induced localised states. The I-V characteristics show current steps of order 0.1 nA per donor before the main current peak, which is quantitatively in good agreement with the experimental results.

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