Memristive-synapse spiking neural networks based on single-electron transistors

In recent decades, with the rapid development of artificial intelligence technologies and bionic engineering, the spiking neural network (SNN), inspired by biological neural systems, has become one of the most promising research topics, enjoying numerous applications in various fields. Due to its complex structure, the simplification of SNN circuits requires serious consideration, along with their power consumption and space occupation. In this regard, the use of SSN circuits based on single-electron transistors (SETs) and modified memristor synapses is proposed herein. A prominent feature of SETs is Coulomb oscillation, which has characteristics similar to the pulses produced by spiking neurons. Here, a novel window function is used in the memristor model to improve the linearity of the memristor and solve the boundary and terminal lock problems. In addition, we modify the memristor synapse to achieve better weight control. Finally, to test the SNN constructed with SETs and memristor synapses, an associative memory learning process, including memory construction, loss, reconstruction, and change, is implemented in the circuit using the PSPICE simulator.

Some physical results of single electron transitor

Single electron transistor (SET) is a key element in current research area of nanoelectronics and nanotechnology which can offer nano-feature size, low power consumption and high operating speed. SET is a new nanoscale switching device. It can control the motion of the single electron. The goal of this paper is to discuss about some physical properties of the SET and focuses on simulation of basic quantum device characteristics such as tunneling effect, Coulomb blockage, Quantum dot, Coulomb staircase, and Coulomb oscillation. The current-voltage characteristics of SET are explored for illustration. Two types of metallic and semiconducting SETs have been simulated.

Evaluation of Room-Temperature Performance of Ultra-Small Single-Electron Transistor-Based Analog-to-Digital Convertors

In this paper, in order to analyze the performance of single-electron transistor (SET)-based analog-to-digital converter (ADC) circuits at room temperature, first, the quantum Coulomb blockade regime is explained and based on it we calculate and discuss the inherent Coulomb oscillation characteristics of room-temperature-operating SETs (or, in other words, ultra-small SETs). Then, to explain the performance of SET-based ADC structures, we explore the sensitivity of converter section of these structures to the inherent periodic oscillation characteristics. By simulating two different temperatures of 100[Formula: see text]K and 300[Formula: see text]K, we demonstrate that for proper performance of converter section of the SET-based ADCs, SETs must have inherent Coulomb oscillations with the same and high peak-to-valley current ratio (PVCR) and equal Coulomb peak spacing (i.e., equal [Formula: see text]. The Coulomb oscillation characteristics of the room-temperature-operating silicon SET show the Coulomb oscillations with unequal PVCRs and unequal Coulomb peak spacings (i.e., unequal [Formula: see text]. As a result, it can be seen that the room-temperature-operating SET-based ADCs never have a suitable output.

ELECTRONIC TRANSPORT BEHAVIORS DUE TO CHARGE DENSITY WAVES IN Ni–Nb–Zr–H GLASSY ALLOYS

The amorphous Ni – Nb – Zr – H glassy alloy containing subnanometer-sized icosahedral Zr 5 Nb 5 Ni 3 clusters exhibited four types of electronic phenomena: a metal/insulator transition, an electric current-induced voltage oscillation (Coulomb oscillation), giant capacitor behavior and an electron avalanche with superior resistivity. These findings could be excluded by charge density waves that the low-dimensional component of clusters, in which the atoms are lined up in chains along the [130] direction, plays important roles in various electron transport phenomena.

ROOM-TEMPERATURE COULOMB OSCILLATION OF Ni–Nb–Zr–H GLASSY ALLOY

The Ids–Vg characteristics of the aluminum-oxide glassy alloy ( Ni 0.36 Nb 0.24 Zr 0.40)90- H 10 field-effect transistor (GAFET) for gate–drain bias voltage from -50 to +50 μV were measured at room temperature. We observed four kinds of drain current oscillations for gate voltage at two-current plateau regions of -20~-15 and +35~+40 μV. The transistor showed the three-dimensional Coulomb diamond structure. From DC current standards I=ef, we get f=256 GHz for the first peak, being tunneling of one electron.