Bias‐voltage‐ and bias‐light‐dependent high photocurrent gains in amorphous silicon Schottky barriers

1993 ◽  
Vol 73 (5) ◽  
pp. 2548-2554 ◽  
Author(s):  
F. A. Rubinelli ◽  
J. Y. Hou ◽  
S. J. Fonash
Keyword(s):  
Amorphous Silicon ◽  
Bias Voltage ◽  
Schottky Barriers

Photoresponse Linearity of a-Si:H Imaging Pixels

1993 ◽  
Vol 297 ◽  
Author(s):  
J. Yorkston ◽  
L.E. Antonuk ◽  
W. Huang ◽  
R.A. Street
Keyword(s):  
Amorphous Silicon ◽  
Bias Voltage ◽  
Linear Response ◽  
Reverse Bias ◽  
Reverse Bias Voltage ◽  
Imaging Arrays ◽  
Low Contrast ◽  
X Ray

Amorphous silicon imaging arrays with ∼3×105 pixels have recently been developed and x-ray images of low contrast anatomical phantoms have been demonstrated. This paper reports on the linearity of response of these a-Si:H imaging pixels as a function of reverse bias voltage. The fraction of the imaging pixel's full signal range that maintains a linear response has been found to increase with increasing voltage.

The temperature dependence of the barrier height in amorphous-silicon Schottky barriers

1987 ◽  
Vol 56 (1) ◽  
pp. 71-78 ◽  
Author(s):  
D. R. Bapat ◽  
K. L. Narasimhan ◽  
Ravi Kuchibhotla
Keyword(s):  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Barrier Height ◽  
Schottky Barriers

Schottky barriers on phosphorus-doped hydrogenated amorphous silicon: The effects of tunneling

1986 ◽  
Vol 33 (10) ◽  
pp. 6936-6945 ◽  
Author(s):  
W. B. Jackson ◽  
R. J. Nemanich ◽  
M. J. Thompson ◽  
B. Wacker
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Schottky Barriers ◽  
Phosphorus Doped ◽  
Hydrogenated Amorphous

Effect of heat treatment on palladium amorphous silicon Schottky barriers

1982 ◽  
Vol 20 (3) ◽  
pp. 801-803 ◽  
Author(s):  
S. M. Pietruszko ◽  
K. L. Narasimhan ◽  
S. Guha
Keyword(s):  
Heat Treatment ◽  
Amorphous Silicon ◽  
Schottky Barriers
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