Effect of heat treatment on palladium amorphous silicon Schottky barriers

1982 ◽  
Vol 20 (3) ◽  
pp. 801-803 ◽  
Author(s):  
S. M. Pietruszko ◽  
K. L. Narasimhan ◽  
S. Guha
Keyword(s):  
Heat Treatment ◽  
Amorphous Silicon ◽  
Schottky Barriers

Crystallization of Amorphous Silicon Thin Films by Microwave Heating

2014 ◽  
Vol 1666 ◽  
Author(s):  
Tomohiko Nakamura ◽  
Shinya Yoshidomi ◽  
Masahiko Hasumi ◽  
Toshiyuki Sameshima ◽  
Tomohisa Mizuno
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Amorphous Silicon ◽  
Microwave Heating ◽  
Volume Ratio ◽  
Heated Sample ◽  
Silicon Thin Films ◽  
Scattering Spectra ◽  
Raman Scattering Spectra ◽  
Si Films

ABSTRACTWe report crystallization of amorphous silicon (a-Si) thin films and improvement of thin film transistors (TFTs) characteristics using 2.45 GHz microwave heating assisted with carbon powders. Undoped 50-nm-thick a-Si films were formed on quartz substrates and heated by microwave irradiation for 2, 3, and 4 min. Raman scattering spectra revealed that the crystalline volume ratio increased to 0.42 for the 4-min heated sample. The dark and photo electrical conductivities measured by Air mass 1.5 at 100 mW/cm2 were 2.6x10-6 and 5.2x10-6 S/cm in the case of 4-min microwave heating followed by 1.3x106-Pa-H2O vapor heat treatment at 260°C for 3 h. N channel polycrystalline silicon TFTs characteristics were improved by the combination of microwave heating with high-pressure H2O vapor heat treatment. The threshold voltage decreased from 5.3 to 4.2 V and the effective carrier mobility increased from 18 to 25 cm2/Vs.

The Effect of Heat Treatment on Al-GaAs Schottky Barriers

1973 ◽  
Vol 12 (11) ◽  
pp. 1814-1815 ◽  
Author(s):  
Osamu Wada ◽  
Shintaro Yanagisawa ◽  
Hirobumi Takanashi
Keyword(s):  
Heat Treatment ◽  
Schottky Barriers

Heat treatment of amorphous silicon p-i-n solar cells with high-pressure H2O vapor

2012 ◽  
Vol 358 (17) ◽  
pp. 2285-2288 ◽  
Author(s):  
J. Takenezawa ◽  
M. Hasumi ◽  
T. Sameshima ◽  
T. Koida ◽  
T. Kaneko ◽  
...  
Keyword(s):  
Heat Treatment ◽  
High Pressure ◽  
Solar Cells ◽  
Amorphous Silicon

The temperature dependence of the barrier height in amorphous-silicon Schottky barriers

1987 ◽  
Vol 56 (1) ◽  
pp. 71-78 ◽  
Author(s):  
D. R. Bapat ◽  
K. L. Narasimhan ◽  
Ravi Kuchibhotla
Keyword(s):  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Barrier Height ◽  
Schottky Barriers

Microstructure of Silicon Nitride Fibers at Elevated Temperatures

2017 ◽  
Vol 898 ◽  
pp. 1705-1711 ◽  
Author(s):  
Jun Zhe Li ◽  
Xun Sun ◽  
Hai Tao Liu ◽  
Hai Feng Cheng ◽  
Xiao Shan Zhang
Keyword(s):  
Heat Treatment ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Treatment Process ◽  
Elevated Temperatures ◽  
Heat Treatment Process ◽  
Amorphous Silicon Nitride ◽  
Heat Treated ◽  
Strength Retention ◽  
Heat Treated Temperature

The composition and microstructure of silicon nitride fibers after heat-treatment at elevated temperatures were investigated by XRD, NMR, XPS, SEM and TEM analyses. The results show that as-received fibers consisted of amorphous silicon nitride, and a little Si-C-O structure. During heat-treatment process, α-Si3N4 and β-Si3N4 formed resulting from the crystallization of amorphous silicon nitride, and the formation of β-SiC derived from the decomposition of Si-C-O structure. As heat-treated temperature increased from 1400oC to 1600oC, the above phenomenon become obvious, indicating that the fiber would possess high serving life with serving temperature lower than 1400oC. The tensile strength of fibers stays stable when heat-treated temperature was below 1200oC, while the strength retention of fibers sharply decreased to 50% after heat-treatment at 1400°C.

scholarly journals Heat Treatment Effect on the Phase Composition of the Silica Electrochemical Coating and the Carbon Fiber Strength

Materials ◽  
2021 ◽  
Vol 14 (18) ◽  
pp. 5209
Author(s):  
Sergei Galyshev ◽  
Evgeniya Postnova ◽  
Olga Shakhlevich ◽  
Dmitrii Agarkov ◽  
Ekaterina Agarkova ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Phase Composition ◽  
Carbon Fiber ◽  
Amorphous Silicon ◽  
Photoelectron Spectroscopy ◽  
Silicon Oxide ◽  
Fiber Strength ◽  
Sol Gel ◽  
Initial State ◽  
X Ray

This work is devoted to the study of the chemical and phase composition of a carbon fiber coating obtained by the electrochemical sol-gel method. The experimental data obtained using several independent complementary methods, including X-ray phase analysis, thermogravimetric and differential thermal analysis, scanning electron microscopy and elemental analysis, and X-ray photoelectron spectroscopy, are in good agreement with each other. It was found that the resulting coating consists of amorphous silicon oxide and crystalline potassium carbonate. Heating above 870 °C leads to the crystallization of cristobalite from amorphous silicon dioxide. At a temperature of about 870 °C, the coating acquires a smooth surface, and heating above 1170 °C leads to its destruction. Thus, the optimum temperature for the heat treatment of the coating is about 870 °C. The loss of strength of carbon fiber at each stage of coating was estimated. A full coating cycle, including thermal cleaning from the sizing, coating, and heat treatment, results in a loss of fiber strength by only 11% compared to the initial state.

Schottky barriers on phosphorus-doped hydrogenated amorphous silicon: The effects of tunneling

1986 ◽  
Vol 33 (10) ◽  
pp. 6936-6945 ◽  
Author(s):  
W. B. Jackson ◽  
R. J. Nemanich ◽  
M. J. Thompson ◽  
B. Wacker
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Schottky Barriers ◽  
Phosphorus Doped ◽  
Hydrogenated Amorphous

Metastable Barrier Voltage in ZnO Varistors

1981 ◽  
Vol 5 ◽  
Author(s):  
Tapan K. Gupta ◽  
William G. Carlson ◽  
Barbara O. Hall
Keyword(s):  
Heat Treatment ◽  
Grain Boundary ◽  
Applied Voltage ◽  
Schottky Barriers ◽  
Reversible Change ◽  
Improved Stability ◽  
Zno Varistors

ABSTRACTA reversible change in barrier voltage is observed in assintered ZnO varistors upon application and removal of the applied voltage. This is attributed to a metastable component in the grain boundary Schottky barriers. Varistors show improved stability when the metastable component is removed or fixed by heat treatment.

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