ELECTRON TRANSPORT IN HYDROGENATED AMORPHOUS SILICON SCHOTTKY BARRIERS AND DEEP LOCALIZED STATES KINETICS

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-487-C4-490
Author(s):  
S. Deleonibus ◽  
D. Jousse
Keyword(s):  
Electron Transport ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Schottky Barriers ◽  
Localized States ◽  
Hydrogenated Amorphous

Electron transport in hydrogenated amorphous silicon

1983 ◽  
Vol 59-60 ◽  
pp. 473-476
Author(s):  
J. Shirafuji ◽  
H. Matsui ◽  
M. Kuwagaki ◽  
T. Sato ◽  
Y. Inuishi
Keyword(s):  
Electron Transport ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

Investigations of Localized States in Hydrogenated Amorphous Silicon

1984 ◽  
Vol 23 (Part 1, No. 1) ◽  
pp. 6-10 ◽  
Author(s):  
Fon-Shan Huang ◽  
Hua Chang ◽  
Jiann-Ruey Chen ◽  
Yuen-Chung Liu
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Localized States ◽  
Hydrogenated Amorphous

Picosecond electron transport in hydrogenated amorphous silicon

Solar Cells ◽  
1989 ◽  
Vol 27 (1-4) ◽  
pp. 169-175 ◽  
Author(s):  
J. Tauc ◽  
R.I. Devlen ◽  
E.A. Schiff
Keyword(s):  
Electron Transport ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

Schottky barriers on phosphorus-doped hydrogenated amorphous silicon: The effects of tunneling

1986 ◽  
Vol 33 (10) ◽  
pp. 6936-6945 ◽  
Author(s):  
W. B. Jackson ◽  
R. J. Nemanich ◽  
M. J. Thompson ◽  
B. Wacker
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Schottky Barriers ◽  
Phosphorus Doped ◽  
Hydrogenated Amorphous

Bias Stress Induced Instabilities in Amorphous Silicon Nitride / Crystalline Silicon and Amorphous Silicon Nitride / Amorphous Silicon Structures

1991 ◽  
Vol 219 ◽  
Author(s):  
J. Kanicki ◽  
C. Godet ◽  
A. V. Gelatos
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Localized States ◽  
Negative Bias ◽  
Amorphous Silicon Nitride ◽  
Bias Stress ◽  
Silicon Structures ◽  
Hydrogenated Amorphous

ABSTRACTThe effects of positive and negative bias stress on hydrogenated amorphous silicon nitride / crystalline silicon and hydrogenated amorphous silicon nitride / hydrogenated amorphous silicon (a-Si:H) structures are investigated as a function of stress time, stress temperature and stress bias. It is shown that in both structures bias stress induces a parallel shift of the C-V (capacitance-voltage) characteristics. For a given stress bias the direction of the C-V shift depends on the sign of the applied stress voltage, while the magnitude of the C-V shift depends on stress time and temperature. In addition, it is shown that positive bias stress slightly increases the number of localized states in the a-Si:H mobility gap, but negative bias stress does not. These results lead us to conclude that the C-V shift is not induced by dangling bond defects in a-Si:H but rather by carrier trapping in the insulator.

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