High resistivity LT-In0.47Ga0.53P grown by gas source molecular beam epitaxy
1993 ◽
Vol 22
(12)
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pp. 1481-1485
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Keyword(s):
Keyword(s):
1987 ◽
Keyword(s):
1994 ◽
Vol 136
(1-4)
◽
pp. 310-314
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2017 ◽
Vol 477
◽
pp. 135-138
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2003 ◽
Vol 103
(3)
◽
pp. 227-232
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Keyword(s):