Strain effects on normal incidence hole intersubband absorption in ap‐type semiconductor quantum well

1992 ◽  
Vol 72 (4) ◽  
pp. 1539-1542 ◽  
Author(s):  
D. Teng ◽  
C. Lee ◽  
L. F. Eastman
Keyword(s):  
Quantum Well ◽  
Normal Incidence ◽  
Strain Effects ◽  
Intersubband Absorption ◽  
Semiconductor Quantum Well ◽  
Type Semiconductor

P-Type Quantum Well Infrared Photodetectors Grown by OMVPE

1991 ◽  
Vol 240 ◽  
Author(s):  
W. S. Hobson ◽  
A. Zussman ◽  
J. De Jong ◽  
B. F. Levine
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Normal Incidence ◽  
Infrared Photodetectors ◽  
Cutoff Wavelength ◽  
Peak Wavelength ◽  
Long Wavelength ◽  
Quantum Well Infrared Photodetectors ◽  
Intersubband Absorption ◽  
P Type

ABSTRACTWe report on the growth and fabrication of p-doped long wavelength GaAs/AlxGa1−x As quantum well infrared photodetectors (QWIP) grown by organometallic vapor phase epitaxy. The operation of these devices is based on the photocurrent induced through valence band intersubband absorption by holes and, unlike n-doped QWIPs, can utilize normal incidence illumination. Carbon and zinc were used as the p-type dopants in a low-pressure (30 Torr) vertical-geometry reactor. The Zn-doped QWIP consisted of fifty periods of 48 nm-thick undoped Al0.36Ga0.64As barriers and nominally 4 nm-thick doped GaAs quantum wells. Using normal incidence, a quantum efficiency of η = 2.5% and a detectivity of at 77K were obtained for a peak wavelength λp = 6.8 μm and a cutoff wavelength λ∫ =7.6 μm. The C-doped QWIP had 54 nm-thick Al0.31Ga0.69As barriers and exhibited a normal incidence These initial studies indicate the superiority of carbon to zinc as the p-type dopant for these structures. The detectivity of the C-doped QWIPs is about four times less than n-doped QWIPs for the same λp but have the advantage of utilizing normal incidence illumination.

Strain effects on the intervalence‐subband normal‐incidence absorption in ap‐type InGaAs/InP quantum well

1994 ◽  
Vol 65 (13) ◽  
pp. 1706-1708 ◽  
Author(s):  
S. A. Stoklitsky ◽  
P. O. Holtz ◽  
B. Monemar ◽  
Q. X. Zhao ◽  
T. Lundström
Keyword(s):  
Quantum Well ◽  
Normal Incidence ◽  
Strain Effects

scholarly journals Diffusion and transport of spin pulses in an n-type semiconductor quantum well

2005 ◽  
Vol 98 (11) ◽  
pp. 113702 ◽  
Author(s):  
L. Jiang ◽  
M. Q. Weng ◽  
M. W. Wu ◽  
J. L. Cheng
Keyword(s):  
Quantum Well ◽  
Semiconductor Quantum Well ◽  
Type Semiconductor

High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy

1992 ◽  
Vol 2 (9) ◽  
pp. 1727-1738 ◽  
Author(s):  
A. Accard ◽  
F. Brillouet ◽  
E. Duda ◽  
B. Fernier ◽  
G. Gelly ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Performance ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Gas Source ◽  
Semiconductor Quantum Well

SUPERLATTICE TUNNELING DETECTORS OPERATING AT λ = 10 µm, BASED ON QUANTUM WELL INTERSUBBAND ABSORPTION

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-611-C5-614
Author(s):  
B. F. LEVINE ◽  
K. K. CHOI ◽  
C. G. BETHEA ◽  
J. WALKER ◽  
R. J. MALIK
Keyword(s):  
Quantum Well ◽  
Intersubband Absorption
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