Strain effects on the intervalence‐subband normal‐incidence absorption in ap‐type InGaAs/InP quantum well

1994 ◽  
Vol 65 (13) ◽  
pp. 1706-1708 ◽  
Author(s):  
S. A. Stoklitsky ◽  
P. O. Holtz ◽  
B. Monemar ◽  
Q. X. Zhao ◽  
T. Lundström
Keyword(s):  
Quantum Well ◽  
Normal Incidence ◽  
Strain Effects

Responsivity of multiple quantum well structures grown by MOCVD at normal incidence

2003 ◽  
Author(s):  
Vladimir B. Kulikov ◽  
G. H. Avetisyan ◽  
L. M. Vasilevskaya ◽  
I. D. Zalevsky ◽  
I. V. Budkin ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Normal Incidence ◽  
Multiple Quantum ◽  
Quantum Well Structures

Tensile-strain effects in quantum-well and superlattice band structures

1994 ◽  
Vol 49 (15) ◽  
pp. 10402-10416 ◽  
Author(s):  
Arvind Baliga ◽  
Dhrupad Trivedi ◽  
Neal G. Anderson
Keyword(s):  
Quantum Well ◽  
Tensile Strain ◽  
Band Structures ◽  
Strain Effects

Normal incidence GaAs/AlGaAs multiple-quantum-well polarization modulator using an induced uniaxial strain

1993 ◽  
Vol 40 (11) ◽  
pp. 2144-2145 ◽  
Author(s):  
J. Pamulapati ◽  
H. Shen ◽  
M. Wraback ◽  
M. Taysing-Lara ◽  
M. Dutta ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Normal Incidence ◽  
Uniaxial Strain ◽  
Multiple Quantum ◽  
Polarization Modulator
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