Intrinsic stress in hydrogenated amorphous silicon deposited with a remote hydrogen plasma

1992 ◽  
Vol 71 (6) ◽  
pp. 2628-2631 ◽  
Author(s):  
K. S. Stevens ◽  
N. M. Johnson
Keyword(s):  
Amorphous Silicon ◽  
Hydrogen Plasma ◽  
Hydrogenated Amorphous Silicon ◽  
Intrinsic Stress ◽  
Hydrogenated Amorphous

Etching Properties of Hydrogenated Amorphous Silicon

1991 ◽  
Vol 219 ◽  
Author(s):  
Y. S. Tsuo ◽  
Y. Xu ◽  
D. W. Baker ◽  
S.K Deb
Keyword(s):  
Amorphous Silicon ◽  
Plasma Etching ◽  
Hydrogen Content ◽  
Chemical Etching ◽  
Isopropyl Alcohol ◽  
Hydrogen Plasma ◽  
Hydrogenated Amorphous Silicon ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Hydrogenated Amorphous

ABSTRACTWe have studied wet-chemical and dry etching properties of doped and undoped hydrogenated amorphous silicon (a-Si:H) films with bonded hydrogen content varying from 0 to 20 at.%. Etching processes studied include (1) wet-chemical etching using solutions of KOH, isopropyl alcohol (IPA), and H2O, (2) hydrogen plasma etching, and (3) XeF2 vapor etching.

Selective Etching of Hydrogenated Amorphous Silicon by Hydrogen Plasma

1994 ◽  
Vol 33 (Part 1, No. 7B) ◽  
pp. 4442-4445 ◽  
Author(s):  
Masanori Otobe ◽  
Masao Kimura ◽  
Shunri Oda
Keyword(s):  
Amorphous Silicon ◽  
Hydrogen Plasma ◽  
Hydrogenated Amorphous Silicon ◽  
Selective Etching ◽  
Hydrogenated Amorphous

High-Quality Wide-Gap Hydrogenated Amorphous Silicon Fabricated Using Hydrogen Plasma Post-Treatment

1994 ◽  
Vol 33 (Part 1, No. 4A) ◽  
pp. 1773-1777 ◽  
Author(s):  
Shingo Okamoto ◽  
Yoshihiro Hishikawa ◽  
Sadaji Tsuge ◽  
Manabu Sasaki ◽  
Kunimoto Ninomiya ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Hydrogen Plasma ◽  
Hydrogenated Amorphous Silicon ◽  
Post Treatment ◽  
High Quality ◽  
Wide Gap ◽  
Hydrogenated Amorphous

Hydrogen Diffusion in Boron-Doped Hydrogenated Amorphous Silicon Films: Crystallization and Induced Structural Changes

2005 ◽  
Vol 864 ◽  
Author(s):  
F. Kail ◽  
A. Hadjadj ◽  
P. Roca i Cabarrocas
Keyword(s):  
Amorphous Silicon ◽  
Structural Changes ◽  
Hydrogen Diffusion ◽  
Hydrogen Plasma ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Hydrogen Atoms ◽  
Boron Doped ◽  
Hydrogenated Amorphous ◽  
Positively Charged

AbstractWe have studied the evolution of the structure of boron-doped hydrogenated amorphous silicon films exposed to a hydrogen plasma. From the early stages of exposure, hydrogen diffuses and forms a thick H-rich subsurface. At longer times, hydrogen plasma leads to the formation of a microcrystalline layer via chemical transport without crystallization of the initial layer. We observe that the hydrogen content increases in the films during a plasma exposure and once the microcrystalline layer is formed hydrogen diffuses out of the sample accompanied with a decrease in the boron content. This effect can be attributed to the electric field developed within the heterojunction a-Si:H/μc-Si:H that drives the positively charged hydrogen atoms in the boron-doped layer towards the μc-Si:H layer.

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