Application of the time‐resolved optical‐beam‐induced current method to the investigation ofn‐metal‐oxide‐semiconductor inverters

1992 ◽  
Vol 71 (6) ◽  
pp. 3010-3018 ◽  
Author(s):  
H. Bergner ◽  
K. Hempel ◽  
A. Krause ◽  
U. Stamm
Keyword(s):  
Metal Oxide ◽  
Current Method ◽  
Metal Oxide Semiconductor ◽  
Optical Beam ◽  
Oxide Semiconductor ◽  
Induced Current ◽  
Time Resolved ◽  
Optical Beam Induced Current

A time-resolved optical beam induced current method

1990 ◽  
Vol 12 (1-4) ◽  
pp. 143-148 ◽  
Author(s):  
Harald Bergner ◽  
Tobias Damm ◽  
Uwe Stamm ◽  
Klaus-Peter Stolberg
Keyword(s):  
Current Method ◽  
Optical Beam ◽  
Induced Current ◽  
Time Resolved ◽  
Optical Beam Induced Current

Photo-Leakage-Current Analysis of Poly-Si TFT by Using Rear Irradiation OBIC Method

1998 ◽  
Vol 507 ◽  
Author(s):  
Masatoshi Wakagi ◽  
Tatsuya Ookubo ◽  
Masahiko Ando ◽  
Genshiro Kawachi ◽  
Akio Mimura ◽  
...  
Keyword(s):  
Leakage Current ◽  
Current Method ◽  
Optical Beam ◽  
Induced Current ◽  
Current Analysis ◽  
Low Concentration ◽  
Drain Electrode ◽  
Lightly Doped Drain ◽  
Optical Beam Induced Current

ABSTRACTPhoto-leakage-current of poly-Si (polycrystalline Si) TFFs has been investigated by using the rear irradiation OBIC (Optical Beam Induced Current) method. In the case of the offset gate TFIs, it was found that the photo-leakage-current was generated in the offset region of the drain electrode side. In order to reduce the photo-leakage-current, low concentration phosphor (P) was doped in the offset region, which corresponds to LDD (Lightly Doped Drain) structure. In the LDD TFT, the photo leakage current at the offset region decreased remarkably, because of the reduction of hole transportation in this region.

Three-Dimensional Nanometric Sub-Surface Imaging of a Silicon Flip-Chip Using the Two-Photon Optical Beam Induced Current Method

2007 ◽  
Author(s):  
E. Ramsay ◽  
K. A. Serrels ◽  
M. J. Thomson ◽  
A. J. Waddie ◽  
R. J. Warburton ◽  
...  
Keyword(s):  
Flip Chip ◽  
Three Dimensional ◽  
Current Method ◽  
Optical Beam ◽  
Lateral Resolution ◽  
Surface Imaging ◽  
Induced Current ◽  
Axial Resolution ◽  
Two Photon ◽  
Optical Beam Induced Current

Abstract By implementing two-photon optical-beam-induced current microscopy using a solid-immersion lens, imaging inside a silicon flip chip is reported with 166nm lateral resolution and an axial resolution capable of resolving features only 100nm in height.

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