The Effect of Electron Incident Angle on Transmittance and Tunneling Current in an Anisotropic Metal-Oxide-Semiconductor Capacitor with High-K Dielectric Gate Stack

2010 ◽  
Author(s):  
Fatimah A. Noor ◽  
Yudi Darma ◽  
Mikrajuddin Abdullah ◽  
Khairurrijal ◽  
Khairurrijal ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Incident Angle ◽  
Tunneling Current ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Stack ◽  
High K ◽  
High K Dielectric ◽  
Metal Oxide Semiconductor Capacitor ◽  
Anisotropic Metal

Role of ultra thin pseudomorphic InP layer to improve the high-k dielectric/GaAs interface in realizing metal-oxide-semiconductor capacitor

2012 ◽  
Vol 112 (3) ◽  
pp. 034514 ◽  
Author(s):  
Souvik Kundu ◽  
Nripendra N. Halder ◽  
D. Biswas ◽  
P. Banerji ◽  
T. Shripathi ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High K ◽  
High K Dielectric ◽  
Metal Oxide Semiconductor Capacitor

Optimized Al-doped TiO2 gate insulator for metal-oxide-semiconductor capacitor on Ge substrate

2021 ◽  
Author(s):  
Dong Gun Kim ◽  
Cheol Hyun An ◽  
Sanghyeon Kim ◽  
Dae Seon Kwon ◽  
Junil Lim ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Tio2 Film ◽  
Single Layer ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
High K ◽  
Metal Oxide Semiconductor Capacitor

Atomic layer deposited TiO2- and Al2O3-based high-k gate insulator (GI) were examined for the Ge-based metal-oxide-semiconductor capacitor application. The single-layer TiO2 film showed a too high leakage current to be...

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