Low substrate temperature molecular beam epitaxial growth and the critical layer thickness of InGaAs grown on GaAs

1991 ◽  
Vol 70 (5) ◽  
pp. 2634-2640 ◽  
Author(s):  
B. Elman ◽  
Emil S. Koteles ◽  
P. Melman ◽  
K. Ostreicher ◽  
C. Sung
Keyword(s):  
Substrate Temperature ◽  
Epitaxial Growth ◽  
Layer Thickness ◽  
Molecular Beam ◽  
Critical Layer ◽  
Critical Layer Thickness ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Role of substrate temperature in molecular‐beam epitaxial growth of high‐power GaAs/AlGaAs lasers

1992 ◽  
Vol 60 (4) ◽  
pp. 416-418 ◽  
Author(s):  
S. V. Iyer ◽  
H. P. Meier ◽  
Shlomo Ovadia ◽  
C. Parks ◽  
D. J. Arent ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Epitaxial Growth ◽  
High Power ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Molecular-beam-epitaxial growth of Ga1−xInxSb on GaAs substrates

1997 ◽  
Vol 175-176 ◽  
pp. 883-887 ◽  
Author(s):  
J.H. Roslund ◽  
O. Zsebők ◽  
G. Swenson ◽  
T.G. Andersson
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Gaas Substrates ◽  
Molecular Beam Epitaxial Growth

Molecular beam epitaxial growth of gallium nitride nanowires on atomic layer deposited aluminum oxide

2011 ◽  
Vol 334 (1) ◽  
pp. 113-117 ◽  
Author(s):  
Kevin Goodman ◽  
Vladimir Protasenko ◽  
Jai Verma ◽  
Tom Kosel ◽  
Grace Xing ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Aluminum Oxide ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth
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