Influence of substrate temperature and InAs mole fraction on the incorporation of indium during molecular-beam epitaxial growth of InGaAs single quantum wells on GaAs

1989 ◽  
Vol 7 (1) ◽  
pp. 111 ◽  
Author(s):  
D. C. Radulescu
Keyword(s):  
Substrate Temperature ◽  
Quantum Wells ◽  
Epitaxial Growth ◽  
Mole Fraction ◽  
Molecular Beam ◽  
Single Quantum ◽  
Molecular Beam Epitaxial ◽  
Influence Of Substrate ◽  
Molecular Beam Epitaxial Growth

Indium adatom migration during molecular beam epitaxial growth of strained InGaAs/GaAs single quantum wells

1989 ◽  
Vol 55 (25) ◽  
pp. 2611-2613 ◽  
Author(s):  
D. J. Arent ◽  
S. Nilsson ◽  
Y. D. Galeuchet ◽  
H. P. Meier ◽  
W. Walter
Keyword(s):  
Quantum Wells ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Single Quantum ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Molecular beam epitaxial growth window for high-quality (Ga,In)(N,As) quantum wells for long wavelength emission

2006 ◽  
Vol 88 (19) ◽  
pp. 191115 ◽  
Author(s):  
Fumitaro Ishikawa ◽  
Michael Höricke ◽  
Uwe Jahn ◽  
Achim Trampert ◽  
Klaus H. Ploog
Keyword(s):  
Quantum Wells ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
High Quality ◽  
Long Wavelength ◽  
Molecular Beam Epitaxial ◽  
Wavelength Emission ◽  
Molecular Beam Epitaxial Growth
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