Tunneling-barrier controlled excitation transfer in hybrid quantum dot-quantum well nanostructures

2010 ◽  
Vol 108 (7) ◽  
pp. 074316 ◽  
Author(s):  
Yu. I. Mazur ◽  
V. G. Dorogan ◽  
E. Marega ◽  
Z. Ya. Zhuchenko ◽  
M. E. Ware ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Excitation Transfer ◽  
Tunneling Barrier

Optical Study of Carrier Transfer in Strain-induced Quantum Dots

1995 ◽  
Vol 417 ◽  
Author(s):  
Yitong Gu ◽  
M. D. Sturge ◽  
K. Kash ◽  
B. P. Van der Gaag ◽  
A. S. Gozdz ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Quantum Well ◽  
Barrier Height ◽  
Intermediate State ◽  
Excitation Transfer ◽  
Optical Study ◽  
Thermally Activated ◽  
Carrier Transfer

AbstractWe have studied excitation transfer from the host quantum well to strain-confined quantum dots. We find that there is a long-lived intermediate state acting as a reservoir, holding the excitation before it is thermally activated over a barrier to reach the quantum dot. The barrier height increases monotonically with dot size.

Gain-length scaling in quantum dot/quantum well infrared photodetectors

2009 ◽  
Vol 95 (9) ◽  
pp. 093502 ◽  
Author(s):  
T. Yamanaka ◽  
B. Movaghar ◽  
S. Tsao ◽  
S. Kuboya ◽  
A. Myzaferi ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Infrared Photodetectors ◽  
Quantum Well Infrared Photodetectors ◽  
Gain Length ◽  
Length Scaling

Investigation of the Internal Heterostructure of Highly Luminescent Quantum Dot−Quantum Well Nanocrystals

2009 ◽  
Vol 131 (2) ◽  
pp. 470-477 ◽  
Author(s):  
Pralay K. Santra ◽  
Ranjani Viswanatha ◽  
Steve M. Daniels ◽  
Nigel L. Pickett ◽  
Jason M. Smith ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Well

Quantum well and quantum dot infrared photodetectors: physics of operation and modeling

2003 ◽  
Author(s):  
Victor Ryzhii ◽  
Maxim Ryzhii ◽  
Irina Khmyrova ◽  
Robert Suris ◽  
Vladimir Mitin ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Infrared Photodetectors ◽  
Quantum Dot Infrared Photodetectors

Excitation transfer in self-organized asymmetric quantum dot pairs

1998 ◽  
Vol 58 (16) ◽  
pp. R10151-R10154 ◽  
Author(s):  
R. Heitz ◽  
I. Mukhametzhanov ◽  
P. Chen ◽  
A. Madhukar
Keyword(s):  
Quantum Dot ◽  
Excitation Transfer ◽  
Self Organized ◽  
Asymmetric Quantum Dot ◽  
Asymmetric Quantum

scholarly journals Few electron double quantum dot in an isotopically purified 28Si quantum well

2012 ◽  
Vol 100 (14) ◽  
pp. 143110 ◽  
Author(s):  
A. Wild ◽  
J. Kierig ◽  
J. Sailer ◽  
J. W. Ager ◽  
E. E. Haller ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Double Quantum ◽  
Double Quantum Dot

A Novel Peripheral Circuit for SWSFET Based Multivalued Static Random-Access Memory

2020 ◽  
Vol 29 (01n04) ◽  
pp. 2040010
Author(s):  
R. H. Gudlavalleti ◽  
B. Saman ◽  
R. Mays ◽  
Evan Heller ◽  
J. Chandy ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Field Effect Transistors ◽  
Random Access ◽  
Memory Cell ◽  
Random Access Memory ◽  
Static Random Access Memory ◽  
Access Memory ◽  
Input Gate ◽  
Reduction In Area

This paper presents the peripheral circuitry for a multivalued static random-access memory (SRAM) based on 2-bit CMOS cross-coupled inverters using spatial wavefunction switched (SWS) field effect transistors (SWSFETs). The novel feature is a two quantum well/quantum dot channel n-SWSFET access transistor. The reduction in area with four-bit storage-per-cell increases the memory density and efficiency of the SRAM array. The SWSFET has vertically stacked two-quantum well/quantum dot channels between the source and drain regions. The upper or lower quantum charge locations in the channel region is based on the input gate voltage. The analog behavioral modeling (ABM) of the SWSFET device is done using conventional BSIM 3V3 device parameters in 90 nm technology. The Cadence circuit simulations for the proposed memory cell and addressing/peripheral circuitry are presented.

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