Raman study of stress‐relieved silicon‐on‐sapphire films prepared by cw‐laser annealing

1991 ◽  
Vol 69 (11) ◽  
pp. 7815-7819 ◽  
Author(s):  
H. S. Mavi ◽  
A. K. Shukla ◽  
K. P. Jain ◽  
S. C. Abbi ◽  
R. Beserman
Keyword(s):  
Laser Annealing ◽  
Cw Laser ◽  
Raman Study

scholarly journals A comparison between furnace and cw laser annealing of a-Si : evidence of different crystallization states

1982 ◽  
Vol 17 (12) ◽  
pp. 783-786 ◽  
Author(s):  
D. Bensahel ◽  
G. Auvert ◽  
Y. Pauleau ◽  
J.C. Pfister
Keyword(s):  
Laser Annealing ◽  
Cw Laser

Optical, Structural and Electrical Characteristics of Explosively Crystallized Si Thin Films on Glass Substrates

1981 ◽  
Vol 4 ◽  
Author(s):  
G. Auvert ◽  
D. Bensahel ◽  
A. Perio ◽  
F. Morin ◽  
G.A. Rozgonyi ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Laser Annealing ◽  
The State ◽  
Electrical Characteristics ◽  
Glass Substrates ◽  
Explosive Crystallization ◽  
Cw Laser ◽  
Structural And Electrical Properties ◽  
Si Films

ABSTRACTExplosive Crystallization occurs in cw laser annealing on a-Si films deposited on glass substrates at laser scan speeds higher than 30 cm/sec. Optical, structural and electrical properties of the crystallized films at various laser scan speeds confirm the existence of two kinds of explosive growth depending on the state of crystallinity of the starting material.

CW laser annealing of boron implanted polycrystalline silicon

1985 ◽  
Vol 28 (4) ◽  
pp. 339-344 ◽  
Author(s):  
S. Peterström ◽  
G. Holmén ◽  
G. Alestig
Keyword(s):  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Cw Laser

Raman study of amorphous to microcrystalline phase transition in cw laser annealeda‐Si:H films

1989 ◽  
Vol 66 (11) ◽  
pp. 5322-5326 ◽  
Author(s):  
H. S. Mavi ◽  
A. K. Shukla ◽  
S. C. Abbi ◽  
K. P. Jain
Keyword(s):  
Phase Transition ◽  
Cw Laser ◽  
Raman Study

Raman study of cw laser‐induced crystallization ofa‐Si:H films on quartz and sapphire substrates

1991 ◽  
Vol 69 (6) ◽  
pp. 3696-3701 ◽  
Author(s):  
H. S. Mavi ◽  
K. P. Jain ◽  
A. K. Shukla ◽  
S. C. Abbi ◽  
R. Beserman
Keyword(s):  
Sapphire Substrates ◽  
Cw Laser ◽  
Raman Study ◽  
Induced Crystallization

CW Laser Annealing Of Ion-Implanted Silicon

1980 ◽  
Author(s):  
L. D. Hess ◽  
R. A. Forber ◽  
S. A. Kokorowski ◽  
G. L. Olson
Keyword(s):  
Laser Annealing ◽  
Cw Laser ◽  
Ion Implanted

Micro-Raman study of isotope substitution inYBa2Cu318O6.2during local laser annealing

1995 ◽  
Vol 52 (18) ◽  
pp. 13652-13657 ◽  
Author(s):  
V. G. Ivanov ◽  
M. N. Iliev ◽  
C. Thomsen
Keyword(s):  
Laser Annealing ◽  
Isotope Substitution ◽  
Raman Study

Aligned, Coexisting Liquid and Solid Regions in Pulsed and CW Laser Annealing of Si

1982 ◽  
Vol 13 ◽  
Author(s):  
R. J. Nemanich ◽  
D. K. Biegelsen ◽  
W. G. Hawkins
Keyword(s):  
Surface Topography ◽  
Crystallization Process ◽  
Laser Annealing ◽  
Annealing Process ◽  
Temperature Evolution ◽  
Lattice Temperature ◽  
Cw Laser ◽  
Si Films ◽  
Quartz Substrates

ABSTRACTAligned, coexisting liquid and solid regions are observed in cw laser annealing of polycrystalline Si films on quartz substrates. These stripe patterns are the precursors of surface topography that exists after cooling. It is proposed that a similar situation exists in the pulse annealing process. A calculation of the temperature evolution which assumes stripe symmetry and kinetic restraints of the crystallization process has been carried out. These calculations indicate a lattice temperature of between 1100 and 1300 K, 10 nsec after the sample has fully solidified.

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