Computer analysis of the role ofp‐layer quality, thickness, transport mechanisms, and contact barrier height in the performance of hydrogenated amorphous siliconp‐i‐nsolar cells

1991 ◽  
Vol 69 (10) ◽  
pp. 7057-7066 ◽  
Author(s):  
J. K. Arch ◽  
F. A. Rubinelli ◽  
J.‐Y. Hou ◽  
S. J. Fonash
Keyword(s):  
Barrier Height ◽  
Computer Analysis ◽  
Transport Mechanisms ◽  
Contact Barrier ◽  
Hydrogenated Amorphous

Schottky contact barrier height extraction by admittance measurement

2007 ◽  
Vol 101 (5) ◽  
pp. 053705 ◽  
Author(s):  
Yu-Long Jiang ◽  
Jia Luo ◽  
Ye Yao ◽  
Fang Lu ◽  
Guo-Ping Ru ◽  
...  
Keyword(s):  
Barrier Height ◽  
Schottky Contact ◽  
Contact Barrier ◽  
Admittance Measurement

scholarly journals High spectral response of self-driven GaN-based detectors by controlling the contact barrier height

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Xiaojuan Sun ◽  
Dabing Li ◽  
Zhiming Li ◽  
Hang Song ◽  
Hong Jiang ◽  
...  
Keyword(s):  
Barrier Height ◽  
Spectral Response ◽  
Contact Barrier

Metal / Hydrogenated Amorphous Silicon Interfaces

1987 ◽  
Vol 95 ◽  
Author(s):  
Jerzy Kanicki
Keyword(s):  
Amorphous Silicon ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Hydrogenated Amorphous Silicon ◽  
Carrier Injection ◽  
Metal Work Function ◽  
Consistent Model ◽  
Current Saturation ◽  
Metal Work ◽  
Hydrogenated Amorphous

The contact properties between different metals and hydrogenated amorphous silicon, prepared by various deposition techniques in different laboratories, are reviewed. From these studies the appropriate metallizations have been established for the achievement of Schottky diode, quasi-ohmic or ohmic contact to undoped and doped films. The various characteristic parameters describing Schottky barrier interfaces such as ideality factor, current saturation, contact resistance and barrier height are discussed. The dependence of Schottky barrier height upon the metal work function, measuring and annealing temperature, and optical band-gap are also reported. The minority-carrier injection and series resistance effects on the contact properties of a-Si:H diodes are described. All the results are interpreted in terms of a self-consistent model that exhibits an electrode-limited to bulk-limited transition.

scholarly journals Buffer/absorber interface recombination reduction and improvement of back-contact barrier height in CdTe solar cells

2019 ◽  
Vol 685 ◽  
pp. 385-392 ◽  
Author(s):  
Sanjoy Paul ◽  
Craig Swartz ◽  
Sandeep Sohal ◽  
Corey Grice ◽  
Sandip Singh Bista ◽  
...  
Keyword(s):  
Solar Cells ◽  
Barrier Height ◽  
Back Contact ◽  
Cdte Solar Cells ◽  
Interface Recombination ◽  
Contact Barrier

Schottky contact barrier height enhancement on p-type silicon by wet chemical etching

1989 ◽  
Vol 48 (4) ◽  
pp. 391-395 ◽  
Author(s):  
G. A. Adegboyega ◽  
A. Poggi ◽  
E. Susi ◽  
A. Castaldini ◽  
A. Cavallini
Keyword(s):  
Barrier Height ◽  
Chemical Etching ◽  
Schottky Contact ◽  
Type Silicon ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Contact Barrier ◽  
P Type

scholarly journals The Impact of the Surface Treatments on the Properties of Gan/3C-SiC/Si Based Schottky Barrier Diodes

2013 ◽  
Vol 740-742 ◽  
pp. 1111-1114 ◽  
Author(s):  
Ji Sheng Han ◽  
Philip Tanner ◽  
Sima Dimitrijev ◽  
Qu Shuang ◽  
Yan Shen ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Barrier Height ◽  
Schottky Contact ◽  
Surface Preparation ◽  
Schottky Contacts ◽  
Si Substrates ◽  
Contact Barrier ◽  
The Impact ◽  
Substrate Temperatures ◽  
Effect Of Surface

In this work, we studied the effect of surface preparation and substrate temperature during sputter deposition of Schottky contacts on N-GaN/SiC/Si substrates, looking at parameters such as on-resistance, reverse leakage, and contact barrier height. Ti, Ni and Mo were sputtered to form the contacts, and we characterized the I-V curves with the different substrate temperatures during the sputtering as shown in Figure 1. For the Ti Schottky contact, the substrate temperature of 100oC during the sputtering demonstrates the minimum series resistance with Rs about 0.04cm2, while temperatures greater than 3000C increased reverse bias leakage. The Mott-Schottky plot reveals a barrier height of 1.2V for this contact. Results for sputtered Ni contacts using different substrate temperatures will also be presented, as well as the effect of Ar sputter cleaning before contact deposition.

scholarly journals Новый механизм реализации омических контактов

2018 ◽  
Vol 52 (1) ◽  
pp. 138
Author(s):  
А.В. Саченко ◽  
А.Е. Беляев ◽  
Р.В. Конакова
Keyword(s):  
Barrier Height ◽  
Ohmic Contacts ◽  
Contact Potential Difference ◽  
Surface States ◽  
Semiconductor Interface ◽  
Contact Potential ◽  
Semiconductor Doping ◽  
Semiconductor Contacts ◽  
Contact Barrier ◽  
Semiconductor Contact

AbstractAnalysis of the contact-barrier height taking into account the distribution of surface states along coordinate x perpendicular to the insulator–semiconductor interface is performed for metal–semiconductor contacts with a dielectric gap. It is shown that taking into account the spatial dependence of the density of surface states at rather high semiconductor doping levels leads to a substantial decrease in the barrier height, which promotes the realization of ohmic contacts. It is established that the smaller the metal–semiconductor contact potential difference ϕ_ ms is, the stronger the effect of barrier-height lowering. If ϕ_ ms is negative, this effect can lead to potential sign reversal, i.e., to the realization of an enrichment layer in the space-charge region of the semiconductor even at a high density of surface states. This in turn promotes the manifestation of an anomalous dependence of the contact resistivity on temperature; the resistivity increases with an increase in temperature.

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