scholarly journals High spectral response of self-driven GaN-based detectors by controlling the contact barrier height

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Xiaojuan Sun ◽  
Dabing Li ◽  
Zhiming Li ◽  
Hang Song ◽  
Hong Jiang ◽  
...  
Keyword(s):  
Barrier Height ◽  
Spectral Response ◽  
Contact Barrier

Schottky contact barrier height extraction by admittance measurement

2007 ◽  
Vol 101 (5) ◽  
pp. 053705 ◽  
Author(s):  
Yu-Long Jiang ◽  
Jia Luo ◽  
Ye Yao ◽  
Fang Lu ◽  
Guo-Ping Ru ◽  
...  
Keyword(s):  
Barrier Height ◽  
Schottky Contact ◽  
Contact Barrier ◽  
Admittance Measurement

scholarly journals Buffer/absorber interface recombination reduction and improvement of back-contact barrier height in CdTe solar cells

2019 ◽  
Vol 685 ◽  
pp. 385-392 ◽  
Author(s):  
Sanjoy Paul ◽  
Craig Swartz ◽  
Sandeep Sohal ◽  
Corey Grice ◽  
Sandip Singh Bista ◽  
...  
Keyword(s):  
Solar Cells ◽  
Barrier Height ◽  
Back Contact ◽  
Cdte Solar Cells ◽  
Interface Recombination ◽  
Contact Barrier

Schottky contact barrier height enhancement on p-type silicon by wet chemical etching

1989 ◽  
Vol 48 (4) ◽  
pp. 391-395 ◽  
Author(s):  
G. A. Adegboyega ◽  
A. Poggi ◽  
E. Susi ◽  
A. Castaldini ◽  
A. Cavallini
Keyword(s):  
Barrier Height ◽  
Chemical Etching ◽  
Schottky Contact ◽  
Type Silicon ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Contact Barrier ◽  
P Type

scholarly journals The Impact of the Surface Treatments on the Properties of Gan/3C-SiC/Si Based Schottky Barrier Diodes

2013 ◽  
Vol 740-742 ◽  
pp. 1111-1114 ◽  
Author(s):  
Ji Sheng Han ◽  
Philip Tanner ◽  
Sima Dimitrijev ◽  
Qu Shuang ◽  
Yan Shen ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Barrier Height ◽  
Schottky Contact ◽  
Surface Preparation ◽  
Schottky Contacts ◽  
Si Substrates ◽  
Contact Barrier ◽  
The Impact ◽  
Substrate Temperatures ◽  
Effect Of Surface

In this work, we studied the effect of surface preparation and substrate temperature during sputter deposition of Schottky contacts on N-GaN/SiC/Si substrates, looking at parameters such as on-resistance, reverse leakage, and contact barrier height. Ti, Ni and Mo were sputtered to form the contacts, and we characterized the I-V curves with the different substrate temperatures during the sputtering as shown in Figure 1. For the Ti Schottky contact, the substrate temperature of 100oC during the sputtering demonstrates the minimum series resistance with Rs about 0.04cm2, while temperatures greater than 3000C increased reverse bias leakage. The Mott-Schottky plot reveals a barrier height of 1.2V for this contact. Results for sputtered Ni contacts using different substrate temperatures will also be presented, as well as the effect of Ar sputter cleaning before contact deposition.

scholarly journals Новый механизм реализации омических контактов

2018 ◽  
Vol 52 (1) ◽  
pp. 138
Author(s):  
А.В. Саченко ◽  
А.Е. Беляев ◽  
Р.В. Конакова
Keyword(s):  
Barrier Height ◽  
Ohmic Contacts ◽  
Contact Potential Difference ◽  
Surface States ◽  
Semiconductor Interface ◽  
Contact Potential ◽  
Semiconductor Doping ◽  
Semiconductor Contacts ◽  
Contact Barrier ◽  
Semiconductor Contact

AbstractAnalysis of the contact-barrier height taking into account the distribution of surface states along coordinate x perpendicular to the insulator–semiconductor interface is performed for metal–semiconductor contacts with a dielectric gap. It is shown that taking into account the spatial dependence of the density of surface states at rather high semiconductor doping levels leads to a substantial decrease in the barrier height, which promotes the realization of ohmic contacts. It is established that the smaller the metal–semiconductor contact potential difference ϕ_ ms is, the stronger the effect of barrier-height lowering. If ϕ_ ms is negative, this effect can lead to potential sign reversal, i.e., to the realization of an enrichment layer in the space-charge region of the semiconductor even at a high density of surface states. This in turn promotes the manifestation of an anomalous dependence of the contact resistivity on temperature; the resistivity increases with an increase in temperature.

Effect of contact barrier height on performances of BaSi2 heterojunction and homojunction solar cells

2021 ◽  
Author(s):  
Hui Liao ◽  
Chuanmeng Cheng ◽  
Geming Wang ◽  
Shenggao Wang ◽  
Pengfei Li ◽  
...  
Keyword(s):  
Solar Cells ◽  
Barrier Height ◽  
High Efficiency ◽  
Carrier Generation ◽  
Energy Diagram ◽  
Operation Mechanism ◽  
Contact Barrier ◽  
Carrier Transportation ◽  
Alternative Structure ◽  
The Ideal

The effects of contact barrier height on performances of Si/BaSi2 p–n heterojunction, BaSi2 p–n homojunction and Si/BaSi2/Si p–i–n heterojunction were numerical calculated. Band energy diagram, built-in electric field, carrier generation and carrier transportation distributed in the devices are comprehensively investigated. BaSi2 p–n homojunction solar cells are very sensitive to front contact barrier height due to the high light absorption coefficient of front p-BaSi2 layer. Si/BaSi2 p–n heterojunction and BaSi2 p–n homojunction solar cells with donor concentration [Formula: see text] less than [Formula: see text] are apparently affected by back contact barrier height. The ideal [Formula: see text]-Si/BaSi2/[Formula: see text]-Si p–n solar cell achieves a high [Formula: see text] of 1.131 V, suggesting a promising and alternative structure to gain excellent BaSi2-based solar cells once the Urbach tail states and defects can be effectively eliminated. The results help to fundamentally understand operation mechanism and provide intuitive guidance for achieving high-efficiency BaSi2 solar cells.

scholarly journals Influence of Contact Barrier Height on the Characteristics of Polymer Field-Effect Transistors

2005 ◽  
Vol 18 (1) ◽  
pp. 75-78 ◽  
Author(s):  
Yasuda Takeshi ◽  
Lee Sang-Ho ◽  
Furusawa Yoshinobu ◽  
Tsutsui Tetsuo
Keyword(s):  
Barrier Height ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Contact Barrier
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