Schottky contact barrier height enhancement on p-type silicon by wet chemical etching

1989 ◽  
Vol 48 (4) ◽  
pp. 391-395 ◽  
Author(s):  
G. A. Adegboyega ◽  
A. Poggi ◽  
E. Susi ◽  
A. Castaldini ◽  
A. Cavallini
Keyword(s):  
Barrier Height ◽  
Chemical Etching ◽  
Schottky Contact ◽  
Type Silicon ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Contact Barrier ◽  
P Type

Simulation of hydrogen penetration into p-type silicon under wet chemical etching

2002 ◽  
Vol 36 (3) ◽  
pp. 282-285 ◽  
Author(s):  
O. V. Feklisova ◽  
E. B. Yakimov ◽  
N. A. Yarykin
Keyword(s):  
Chemical Etching ◽  
Type Silicon ◽  
Hydrogen Penetration ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
P Type

Crystallographic Wet Chemical Etching of p-Type GaN

2000 ◽  
Vol 147 (2) ◽  
pp. 763 ◽  
Author(s):  
D. A. Stocker ◽  
I. D. Goepfert ◽  
E. F. Schubert ◽  
K. S. Boutros ◽  
J. M. Redwing
Keyword(s):  
Chemical Etching ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
P Type

Fabrication of Smooth GaN-Based Laser Facets

1998 ◽  
Vol 537 ◽  
Author(s):  
D. A. Stocker ◽  
E. F. Schubert ◽  
K. S. Boutros ◽  
J. M. Redwing
Keyword(s):  
Surface Roughness ◽  
Chemical Etching ◽  
Field Effect ◽  
Etch Rate ◽  
Wet Etching ◽  
High Resistivity ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
P Type ◽  
Scanning Electron

AbstractA method is presented for fabricating fully wet-etched InGaN/GaN laser cavities using photoenhanced electrochemical wet etching followed by crystallographic wet etching. Crystallographic wet chemical etching of n- and p-type GaN grown on c-plane sapphire is achieved using H3PO4 and various hydroxides, with etch rates as high as 3.2 μm/min. The crystallographic GaN etch planes are {0001}, {1010}, {1011}, {1012}, and {1013}. The vertical {1010} planes appear perfectly smooth when viewed with a field-effect scanning electron microscope (FESEM), indicating a surface roughness less than 5 nm, suitable for laser facets. The etch rate and crystallographic nature for the various etching solutions are independent of conductivity, as shown by seamless etching of a p-GaN/undoped, high-resistivity GaN homojunction.

scholarly journals Fabrication of Smooth GaN-Based Laser Facets

1999 ◽  
Vol 4 (S1) ◽  
pp. 799-804 ◽  
Author(s):  
D. A. Stocker ◽  
E. F. Schubert ◽  
K. S. Boutros ◽  
J. M. Redwing
Keyword(s):  
Chemical Etching ◽  
Field Effect ◽  
Etch Rate ◽  
Wet Etching ◽  
High Resistivity ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Image Position ◽  
P Type ◽  
Scanning Electron

A method is presented for fabricating fully wet-etched InGaN/GaN laser cavities using hotoenhanced electrochemical wet etching followed by crystallographic wet etching. Crystallographic wet chemical etching of n- and p-type GaN grown on c-plane sapphire is achieved using H3PO4 and various hydroxides, with etch rates as high as 3.2.μm/min. The crystallographic GaN etch planes are {0001}, {100}, {10}, {10}, and {103}. The vertical {100} planes appear perfectly smooth when viewed with a field-effect scanning electron microscope (FESEM), indicating a surface roughness less than 5 nm, suitable for laser facets. The etch rate and crystallographic nature for the various etching solutions are independent of conductivity, as shown by seamless etching of a p-GaN/undoped, high-resistivity GaN homojunction.

Deep Energy Levels of Platinum-Hydrogen Complexes in Silicon

2013 ◽  
Vol 205-206 ◽  
pp. 260-264 ◽  
Author(s):  
Elie Badr ◽  
Peter Pichler ◽  
Gerhard Schmidt
Keyword(s):  
Band Gap ◽  
Deep Level Transient Spectroscopy ◽  
Chemical Etching ◽  
Deep Level ◽  
Schottky Diodes ◽  
Energy Levels ◽  
Type Silicon ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Transient Spectroscopy

Hydrogen incorporated into the samples by wet chemical etching interacts with platinum and forms several energy levels in the silicon forbidden band gap. Deep-level transient spectroscopy (DLTS) on Schottky diodes reveals several platinum-hydrogen related levels in p- and n-type silicon. In the n-type silicon, two new platinum-hydrogen related levels at 0.28 and 0.41 eV below the conduction band are reported. Annealing at 377 °C results in the dissociation of their corresponding platinum-hydrogen complexes.

Formation of Hydrogen-Related Traps in Electron-Irradiated N-type Silicon by Wet Chemical Etching

1998 ◽  
Vol 513 ◽  
Author(s):  
Yutaka Tokuda ◽  
Hitoshi Shimada
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Chemical Etching ◽  
Deep Level ◽  
Electron Trap ◽  
Light Illumination ◽  
Hydrogen Atoms ◽  
Type Silicon ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Transient Spectroscopy

ABSTRACTInteraction of hydrogen atoms and vacancy-related defects in 10 MeV electron-irradiated n-type silicon has been studied by deep-level transient spectroscopy. Hydrogen has been incorporated into electron-irradiated n-type silicon by wet chemical etching. The reduction of the concentration of the vacancy-oxygen pair and divacancy occurs by the incorporation of hydrogen, while the formation of the NHI electron trap (Ec – 0.31 eV) is observed. Further decrease of the concentration of the vacancy-oxygen pair and further increase of the concentration of the NH1 trap are observed upon subsequent below-band-gap light illumination. It is suggested that the trap NHI is tentatively ascribed to the vacancy-oxygen pair which is partly saturated with hydrogen.

Decapsulation Techniques for Cu Wire Bonding Package

2009 ◽  
Author(s):  
Dongmei Meng ◽  
Joe Rupley ◽  
Chris McMahon
Keyword(s):  
Laser Ablation ◽  
Thin Layer ◽  
Chemical Etching ◽  
Wire Bonding ◽  
Methods And Techniques ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Reliability Issue ◽  
Etch Time ◽  
Device Technology

Abstract This paper presents decapsulation solutions for devices bonded with Cu wire. By removing mold compound to a thin layer using a laser ablation tool, Cu wire bonded packages are decapsulated using wet chemical etching by controlling the etch time and temperature. Further, the paper investigates the possibilities of decapsulating Cu wire bonded devices using full wet chemical etches without the facilitation of laser ablation removing much of mold compound. Additional discussion on reliability concerns when evaluating Cu wirebond devices is addressed here. The lack of understanding of the reliability of Cu wire bonded packages creates a challenge to the FA engineer as they must develop techniques to help understanding the reliability issue associated with Cu wire bonding devices. More research and analysis are ongoing to develop appropriate analysis methods and techniques to support the Cu wire bonding device technology in the lab.

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