Schottky contact barrier height extraction by admittance measurement

2007 ◽  
Vol 101 (5) ◽  
pp. 053705 ◽  
Author(s):  
Yu-Long Jiang ◽  
Jia Luo ◽  
Ye Yao ◽  
Fang Lu ◽  
Guo-Ping Ru ◽  
...  
Keyword(s):  
Barrier Height ◽  
Schottky Contact ◽  
Contact Barrier ◽  
Admittance Measurement

Schottky contact barrier height enhancement on p-type silicon by wet chemical etching

1989 ◽  
Vol 48 (4) ◽  
pp. 391-395 ◽  
Author(s):  
G. A. Adegboyega ◽  
A. Poggi ◽  
E. Susi ◽  
A. Castaldini ◽  
A. Cavallini
Keyword(s):  
Barrier Height ◽  
Chemical Etching ◽  
Schottky Contact ◽  
Type Silicon ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Contact Barrier ◽  
P Type

scholarly journals The Impact of the Surface Treatments on the Properties of Gan/3C-SiC/Si Based Schottky Barrier Diodes

2013 ◽  
Vol 740-742 ◽  
pp. 1111-1114 ◽  
Author(s):  
Ji Sheng Han ◽  
Philip Tanner ◽  
Sima Dimitrijev ◽  
Qu Shuang ◽  
Yan Shen ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Barrier Height ◽  
Schottky Contact ◽  
Surface Preparation ◽  
Schottky Contacts ◽  
Si Substrates ◽  
Contact Barrier ◽  
The Impact ◽  
Substrate Temperatures ◽  
Effect Of Surface

In this work, we studied the effect of surface preparation and substrate temperature during sputter deposition of Schottky contacts on N-GaN/SiC/Si substrates, looking at parameters such as on-resistance, reverse leakage, and contact barrier height. Ti, Ni and Mo were sputtered to form the contacts, and we characterized the I-V curves with the different substrate temperatures during the sputtering as shown in Figure 1. For the Ti Schottky contact, the substrate temperature of 100oC during the sputtering demonstrates the minimum series resistance with Rs about 0.04cm2, while temperatures greater than 3000C increased reverse bias leakage. The Mott-Schottky plot reveals a barrier height of 1.2V for this contact. Results for sputtered Ni contacts using different substrate temperatures will also be presented, as well as the effect of Ar sputter cleaning before contact deposition.

Electrical Nanocharacterization of Epitaxial Graphene/Silicon Carbide Schottky Contacts

2014 ◽  
Vol 778-780 ◽  
pp. 1142-1145 ◽  
Author(s):  
Filippo Giannazzo ◽  
Stefan Hertel ◽  
Andreas Albert ◽  
Antonino La Magna ◽  
Fabrizio Roccaforte ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Photoelectron Spectroscopy ◽  
Schottky Contact ◽  
Epitaxial Graphene ◽  
Schottky Contacts ◽  
Specific Contact Resistance ◽  
Monolayer Graphene ◽  
Conductive Atomic Force Microscopy

Epitaxial graphene fabricated by thermal decomposition of the Si-face of silicon carbide (SiC) forms a defined interface to the SiC substrate. As-grown monolayer graphene with buffer layer establishes an ohmic interface even to low-doped (e. g. [N] ≈ 1015 cm-3) SiC, and a specific contact resistance as low as ρC = 5.9×10-6 Ωcm2 can be achieved on highly n-doped SiC layers. After hydrogen intercalation of monolayer graphene, the so-called quasi-freestanding graphene forms a Schottky contact to n-type SiC with a Schottky barrier height of 1.5 eV as determined from C-V analysis and core level photoelectron spectroscopy (XPS). This value, however, strongly deviates from the respective value of less than 1 eV determined from I-V measurements. It was found from conductive atomic force microscopy (C-AFM) that the Schottky barrier is locally lowered on other crystal facets located at substrate step edges. For very small Schottky contacts, the barrier height extracted from I-V curves approaches the value of 1.5 eV from C-V and XPS.

Pd-on-GaAs Schottky Contact: Its Barrier Height and Response to Hydrogen

1991 ◽  
Vol 30 (Part 1, No. 5) ◽  
pp. 906-913 ◽  
Author(s):  
Heng-Yong Nie ◽  
Yasuo Nannichi
Keyword(s):  
Barrier Height ◽  
Schottky Contact

scholarly journals High spectral response of self-driven GaN-based detectors by controlling the contact barrier height

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Xiaojuan Sun ◽  
Dabing Li ◽  
Zhiming Li ◽  
Hang Song ◽  
Hong Jiang ◽  
...  
Keyword(s):  
Barrier Height ◽  
Spectral Response ◽  
Contact Barrier
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