Defect‐free growth of AlxGa1−xAs by liquid‐phase epitaxy on V‐grooved (001) GaAs substrates

1991 ◽  
Vol 69 (12) ◽  
pp. 8154-8157
Author(s):  
I. Rechenberg ◽  
S. Stoeff ◽  
M. Krahl ◽  
D. Bimberg ◽  
A. Höpner
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Gaas Substrates ◽  
Free Growth

Tem Observation of defects in InGaAsP and InGaP Crystals on GaAs Substrates Grown by Liquid Phase Epitaxy

1983 ◽  
Vol 31 ◽  
Author(s):  
O. Ueda ◽  
S. Isozumi ◽  
S. Komiya ◽  
T. Kusunoki ◽  
I. Umebu
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Gaas Substrate ◽  
Stacking Faults ◽  
Dislocation Loops ◽  
Gaas Substrates ◽  
Modulated Structures ◽  
Lattice Matched

ABSTRACTDefects in InGaAsP and InGaP crystals lattice-matched to (001)-oriented GaAs substrate successfully grown by liquid phase epitaxy, have been investigated by TEM and STEM/EDX. Typical defects observed by TEM are composition-modulated structures, dislocation loops, non-structural microdefects, and stacking faults.

Catastrophic degradation of InGaAsP/InGaP double‐heterostructure lasers grown on (001) GaAs substrates by liquid‐phase epitaxy

1985 ◽  
Vol 58 (11) ◽  
pp. 3996-4002 ◽  
Author(s):  
Osamu Ueda ◽  
Kiyohide Wakao ◽  
Satoshi Komiya ◽  
Akio Yamaguchi ◽  
Shoji Isozumi ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Double Heterostructure ◽  
Gaas Substrates

Liquid-Phase Epitaxy on Channeled (100) GaAs Substrates

1986 ◽  
Vol 21 (8) ◽  
pp. K146-K148
Author(s):  
G. Kühn ◽  
M. Lux ◽  
E. Nowak
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Gaas Substrates

Epitaxial lateral overgrowth of InGaAs on patterned GaAs substrates by liquid phase epitaxy

1996 ◽  
Vol 169 (4) ◽  
pp. 613-620 ◽  
Author(s):  
Y. Hayakawa ◽  
S. Iida ◽  
T. Sakurai ◽  
H. Yanagida ◽  
M. Kikuzawa ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Epitaxial Lateral Overgrowth ◽  
Lateral Overgrowth ◽  
Gaas Substrates

Liquid-phase epitaxy of highly-lattice-mismatched InxGa1−xAs layers on (001)GaAs substrates

1994 ◽  
Vol 18 (5-6) ◽  
pp. 269-272
Author(s):  
Masaya Ichimura ◽  
Shin-ichi Nakatani ◽  
Akira Usami ◽  
Takao Wada
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Gaas Substrates

scholarly journals Liquid phase epitaxy of GaAlAs on GaAs substrates with fine surface corrugations

1974 ◽  
Vol 24 (10) ◽  
pp. 466-468 ◽  
Author(s):  
M. Nakamura ◽  
K. Aiki ◽  
J. Umeda ◽  
A. Yariv ◽  
H. W. Yen ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Gaas Substrates ◽  
Fine Surface

Room‐temperature cw operation of InGaAsP/InGaP lasers at 727 nm grown on GaAs substrates by liquid phase epitaxy

1984 ◽  
Vol 44 (11) ◽  
pp. 1035-1037 ◽  
Author(s):  
K. Wakao ◽  
H. Nishi ◽  
T. Kusunoki ◽  
S. Isozumi ◽  
S. Ohsaka
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Room Temperature ◽  
Cw Operation ◽  
Gaas Substrates

Growth of (InSb)1 − x (Sn2) x films on GaAs substrates by liquid-phase epitaxy

2010 ◽  
Vol 44 (7) ◽  
pp. 938-945 ◽  
Author(s):  
A. S. Saidov ◽  
M. S. Saidov ◽  
Sh. N. Usmonov ◽  
U. P. Asatova
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Gaas Substrates

Rapid Growth of Thick, IC Quality GaAs From a Flowing Solution

1989 ◽  
Vol 160 ◽  
Author(s):  
E. E. Crismant ◽  
J. T. Daly ◽  
C. B. Roberts ◽  
D.T. Schaafsma ◽  
H. J. Gerritsen ◽  
...  
Keyword(s):  
Optical Properties ◽  
Theoretical Model ◽  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Rapid Growth ◽  
Static Solution ◽  
Novel Technique ◽  
Gaas Substrates ◽  
Good Agreement ◽  
Flowing Solution

AbstractSingle crystal layers of gallium arsenide have been grown on <111> and <100> oriented GaAs substrates using a flowing solution of gallium saturated with GaAs. With this novel technique, growth rates as high as 9.Oµm/min have been achieved for 5 minutes, while rates of approximately Aµmlmin are typically achieved for 20 minutes of growth. These figures are in good agreement with a previously developed theoretical model and are about two orders of magnitude greater than those for conventional, static solution, liquid phase epitaxy (LPE) for layer thicknesses greater than lµm. Undoped, p-doped and n-doped layers of high crystallographic and electronic quality have been grown. A description of the technique and some of the electro-optical properties are presented in this paper.

TEM study of very thin InGaAsP layers grown by liquid-phase epitaxy

1990 ◽  
Vol 48 (4) ◽  
pp. 672-673
Author(s):  
N.A. Bert ◽  
A.O. Kosogov
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Dark Field ◽  
Organic Chemical ◽  
Simple Liquid ◽  
Cross Sectional ◽  
Conventional Procedure ◽  
Double Heterostructures

The very thin (<100 Å) InGaAsP layers were grown not only by molecular beam epitaxy and metal-organic chemical vapor deposition but recently also by simple liquid phase epitaxy (LPE) technique. Characterization of their thickness, interfase abruptness and lattice defects is important and requires TEM methods to be used.The samples were InGaAsP/InGaP double heterostructures grown on (111)A GaAs substrate. The exact growth conditions are described in Ref.1. The salient points are that the quarternary layers were being grown at 750°C during a fast movement of substrate and a convection caused in the melt by that movement was eliminated. TEM cross-section specimens were prepared by means of conventional procedure. The studies were conducted in EM 420T and JEM 4000EX instruments.The (200) dark-field cross-sectional imaging is the most appropriate TEM technique to distinguish between individual layers in 111-v semiconductor heterostructures.

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