Room‐temperature cw operation of InGaAsP/InGaP lasers at 727 nm grown on GaAs substrates by liquid phase epitaxy

1984 ◽  
Vol 44 (11) ◽  
pp. 1035-1037 ◽  
Author(s):  
K. Wakao ◽  
H. Nishi ◽  
T. Kusunoki ◽  
S. Isozumi ◽  
S. Ohsaka
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Room Temperature ◽  
Cw Operation ◽  
Gaas Substrates

Tem Observation of defects in InGaAsP and InGaP Crystals on GaAs Substrates Grown by Liquid Phase Epitaxy

1983 ◽  
Vol 31 ◽  
Author(s):  
O. Ueda ◽  
S. Isozumi ◽  
S. Komiya ◽  
T. Kusunoki ◽  
I. Umebu
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Gaas Substrate ◽  
Stacking Faults ◽  
Dislocation Loops ◽  
Gaas Substrates ◽  
Modulated Structures ◽  
Lattice Matched

ABSTRACTDefects in InGaAsP and InGaP crystals lattice-matched to (001)-oriented GaAs substrate successfully grown by liquid phase epitaxy, have been investigated by TEM and STEM/EDX. Typical defects observed by TEM are composition-modulated structures, dislocation loops, non-structural microdefects, and stacking faults.

Liquid-phase-epitaxy-grown InAsxSb1−x∕GaAs for room-temperature 8–12μm infrared detectors

2006 ◽  
Vol 88 (24) ◽  
pp. 242108 ◽  
Author(s):  
Changtao Peng ◽  
NuoFu Chen ◽  
Fubao Gao ◽  
Xingwang Zhang ◽  
Chenlong Chen ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Infrared Detectors ◽  
Room Temperature

Hg1−x−yMnxCdyTe Alloys for 1.3−1.8 μm Photodiode Applications

1986 ◽  
Vol 89 ◽  
Author(s):  
S. H. Shin ◽  
J. G. Pasko ◽  
D. S. Lo ◽  
W. E. Tennant ◽  
J. R. Anderson ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Room Temperature ◽  
Reverse Bias ◽  
Fiber Optic ◽  
Superior Performance ◽  
Device Performance ◽  
Device Structure ◽  
Cdte Substrate ◽  
P Type

AbstractHgMnCdTe/CdTe photodiodes with responsivity cutoffs of up to 1.54 pm have been fabricated by liquid phase epitaxy (LPE). The mesa device structure consists of a boron-implanted mosaic fabricated on a p-type Hg1−x−yMnxCdyTe layer grown on a CdTe substrate. A reverse breakdown voltage (VB) of 50 V and a leakage current density of 1.5 × 10−4 A/cm2 at V = −10 V was measured at room temperature (295K). A 0.75 pF capacitance was also measured under a 5 V reverse bias at room temperature. This device performance based on the quaternary HgMnCdTe shows both theoretical and practical promise of superior performance for wavelengths in the range 1.3 to 1.8 μm for fiber optic applications.

Catastrophic degradation of InGaAsP/InGaP double‐heterostructure lasers grown on (001) GaAs substrates by liquid‐phase epitaxy

1985 ◽  
Vol 58 (11) ◽  
pp. 3996-4002 ◽  
Author(s):  
Osamu Ueda ◽  
Kiyohide Wakao ◽  
Satoshi Komiya ◽  
Akio Yamaguchi ◽  
Shoji Isozumi ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Double Heterostructure ◽  
Gaas Substrates

Growth Peculiarities and Magnetic Properties of (LuBi)3Fe5O12 Films by LPE Method

2013 ◽  
Vol 200 ◽  
pp. 256-260 ◽  
Author(s):  
I.I. Syvorotka ◽  
Igor M. Syvorotka ◽  
S.B. Ubizskii
Keyword(s):  
Magnetic Properties ◽  
Liquid Phase ◽  
Surface Morphology ◽  
Film Thickness ◽  
Faraday Rotation ◽  
Liquid Phase Epitaxy ◽  
Magnetization Reversal ◽  
Room Temperature ◽  
Mirror Surface ◽  
Different Types

The series of (LuBi)3Fe5O12 film were grown on (111) oriented GGG substrate with diameters 1, 2 and 3 inch by liquid phase epitaxy using Bi2O3-base flux. Different types of surface morphology on the grown films were observed. The films’ surface was smooth and mirror while the film thickness was less than 13 μm and becomes rough for thickness above this value. The grown films were characterized by measuring magnetization loops and magneto-optic Faraday rotation under magnetization reversal as well as ferromagnetic resonance (FMR). All films with mirror surface demonstrate the in-plane magnetization, high Faraday rotation and FMR linewidth about 0.8 Oe at 9.1 GHz and room temperature.

Liquid-Phase Epitaxy on Channeled (100) GaAs Substrates

1986 ◽  
Vol 21 (8) ◽  
pp. K146-K148
Author(s):  
G. Kühn ◽  
M. Lux ◽  
E. Nowak
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Gaas Substrates

Epitaxial lateral overgrowth of InGaAs on patterned GaAs substrates by liquid phase epitaxy

1996 ◽  
Vol 169 (4) ◽  
pp. 613-620 ◽  
Author(s):  
Y. Hayakawa ◽  
S. Iida ◽  
T. Sakurai ◽  
H. Yanagida ◽  
M. Kikuzawa ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Epitaxial Lateral Overgrowth ◽  
Lateral Overgrowth ◽  
Gaas Substrates

Defect‐free growth of AlxGa1−xAs by liquid‐phase epitaxy on V‐grooved (001) GaAs substrates

1991 ◽  
Vol 69 (12) ◽  
pp. 8154-8157
Author(s):  
I. Rechenberg ◽  
S. Stoeff ◽  
M. Krahl ◽  
D. Bimberg ◽  
A. Höpner
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Gaas Substrates ◽  
Free Growth

Liquid-phase epitaxy of highly-lattice-mismatched InxGa1−xAs layers on (001)GaAs substrates

1994 ◽  
Vol 18 (5-6) ◽  
pp. 269-272
Author(s):  
Masaya Ichimura ◽  
Shin-ichi Nakatani ◽  
Akira Usami ◽  
Takao Wada
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Gaas Substrates
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