scholarly journals The measured dependence of the lateral ambipolar diffusion length on carrier injection-level in Stranski-Krastanov quantum dot devices

2010 ◽  
Vol 108 (4) ◽  
pp. 043108 ◽  
Author(s):  
D. Naidu ◽  
P. M. Smowton ◽  
H. D. Summers
Keyword(s):  
Quantum Dot ◽  
Diffusion Length ◽  
Ambipolar Diffusion ◽  
Carrier Injection ◽  
Injection Level ◽  
Measured Dependence

A-Si:H Ambipolar Diffusion Length and Effective Lifetime Measured by Flying Spot Technique (FST)

1991 ◽  
Vol 219 ◽  
Author(s):  
M. Vieira ◽  
R. Martins ◽  
E. Fortunato ◽  
F. Soares ◽  
L. Guimaraes
Keyword(s):  
Laser Beam ◽  
Transient Analysis ◽  
Diffusion Length ◽  
Transport Equations ◽  
Ambipolar Diffusion ◽  
Schottky Barriers ◽  
Effective Lifetime ◽  
Asymmetrical Distribution ◽  
Flying Spot

ABSTRACTThe determination of the ambipolar diffusion length, L*, and the effective lifetime, τ*, in p/i and a-Si:H Schottky barriers (ITO/p/a-Si:H/Al-Si; Cr/a-Si:H/Cr/Ag) have been determined by Flying Spot Technique, FST. This technique consists in the transient analysis of the photocurrent/photopotential induced by a laser beam that moves perpendicularly to the structure with a constant motion ratio, at different velocities. Taking into account the competition between the diffusion/drift velocities of the excess carriers and the velocity of the flying spot, it is possible to solve the transport equations and to compute separately L* and τ*, from the asymmetrical distribution responses.

Quantum Dot Gate (QDG) Quantum Dot Channel (QDC) Multistate Logic Non-Volatile Memory (NVM) with High-K Dielectric HfO2 Barriers

2020 ◽  
Vol 29 (01n04) ◽  
pp. 2040001
Author(s):  
N. R. Butterfield ◽  
R. Mays ◽  
B. Khan ◽  
R. Gudlavalleti ◽  
F. C. Jain
Keyword(s):  
Quantum Dot ◽  
Hafnium Oxide ◽  
Experimental Testing ◽  
Memory Cell ◽  
Floating Gate ◽  
Carrier Injection ◽  
High K ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
High K Dielectric

This paper presents the theory, fabrication and experimental testing results for a multiple state Non-Volatile Memory (NVM), comprised of hafnium oxide high-k dielectric tunnel and gate barriers as well as a Silicon Quantum Dot Superlattice (QDSL) implemented for the floating gate and inversion channel (QDG) and (QDC) respectively. With the conclusion of Moore’s Law for conventional transistor fabrication, regarding the minimum gate size, current efforts in memory cell research and development are focused on bridging the gap between the conventions of the past sixty years and the future of computing. One method of continuing the increasing chip density is to create multistate devices capable of storing and processing additional logic states beyond 1 and 0. Replacing the silicon nitride floating gate of a conventional Flash NVM with QDSL gives rise to minibands that result in greater control over charge levels stored in the QDG and additional intermediate states. Utilizing Hot Carrier Injection (HCI) programming, for the realized device, various magnitudes of gate voltage pulses demonstrated the ability to accurately control the charge levels stored in the QDG. This corresponds to multiple threshold voltage shifts allowing detection of multiple states during read operations.

True Concurrent Modulation of a Multi-Channel Ring Modulator Transmitter Driven by a Comb Laser

2017 ◽  
Author(s):  
Ashkan Seyedi ◽  
Marco Fiorentino ◽  
Ray Beausoleil
Keyword(s):  
Experimental Data ◽  
Quantum Dot ◽  
Carrier Injection ◽  
Channel Spacing ◽  
Ring Modulator ◽  
Ring Modulators

This paper presents experimental data of concurrent modulation of a multi-channel transmitter that uses carrier-injection ring modulators at 10Gb/s/channel that is optically driven by a quantum-dot comb laser with 50GHz channel spacing.

Proceedings modelling of SiC-PiN diode with adjust of ambipolar diffusion length

SPEEDAM 2010 ◽  
2010 ◽  
Author(s):  
L. H. Gonzalez ◽  
E. B. Brito ◽  
S. N. Perez ◽  
M. A. Rodriguez ◽  
J. C. Yris
Keyword(s):  
Diffusion Length ◽  
Ambipolar Diffusion ◽  
Pin Diode

Ambipolar diffusion length and photoconductivity measurements on ‘‘midgap’’ hydrogenated microcrystalline silicon

1996 ◽  
Vol 80 (9) ◽  
pp. 5111-5115 ◽  
Author(s):  
M. Goerlitzer ◽  
N. Beck ◽  
P. Torres ◽  
J. Meier ◽  
N. Wyrsch ◽  
...  
Keyword(s):  
Diffusion Length ◽  
Ambipolar Diffusion ◽  
Microcrystalline Silicon

Carrier Mobility, Lifetime, and Diffusion Length in Optically Thin Quantum Dot Semiconductor Films

2020 ◽  
Vol 12 (27) ◽  
pp. 30565-30571
Author(s):  
Epimitheas Georgitzikis ◽  
Jan Genoe ◽  
Paul Heremans ◽  
David Cheyns
Keyword(s):  
Quantum Dot ◽  
Carrier Mobility ◽  
Diffusion Length ◽  
Semiconductor Films ◽  
And Diffusion
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