True Concurrent Modulation of a Multi-Channel Ring Modulator Transmitter Driven by a Comb Laser

2017 ◽  
Author(s):  
Ashkan Seyedi ◽  
Marco Fiorentino ◽  
Ray Beausoleil
Keyword(s):  
Experimental Data ◽  
Quantum Dot ◽  
Carrier Injection ◽  
Channel Spacing ◽  
Ring Modulator ◽  
Ring Modulators

This paper presents experimental data of concurrent modulation of a multi-channel transmitter that uses carrier-injection ring modulators at 10Gb/s/channel that is optically driven by a quantum-dot comb laser with 50GHz channel spacing.

Quantum Dot Gate (QDG) Quantum Dot Channel (QDC) Multistate Logic Non-Volatile Memory (NVM) with High-K Dielectric HfO2 Barriers

2020 ◽  
Vol 29 (01n04) ◽  
pp. 2040001
Author(s):  
N. R. Butterfield ◽  
R. Mays ◽  
B. Khan ◽  
R. Gudlavalleti ◽  
F. C. Jain
Keyword(s):  
Quantum Dot ◽  
Hafnium Oxide ◽  
Experimental Testing ◽  
Memory Cell ◽  
Floating Gate ◽  
Carrier Injection ◽  
High K ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
High K Dielectric

This paper presents the theory, fabrication and experimental testing results for a multiple state Non-Volatile Memory (NVM), comprised of hafnium oxide high-k dielectric tunnel and gate barriers as well as a Silicon Quantum Dot Superlattice (QDSL) implemented for the floating gate and inversion channel (QDG) and (QDC) respectively. With the conclusion of Moore’s Law for conventional transistor fabrication, regarding the minimum gate size, current efforts in memory cell research and development are focused on bridging the gap between the conventions of the past sixty years and the future of computing. One method of continuing the increasing chip density is to create multistate devices capable of storing and processing additional logic states beyond 1 and 0. Replacing the silicon nitride floating gate of a conventional Flash NVM with QDSL gives rise to minibands that result in greater control over charge levels stored in the QDG and additional intermediate states. Utilizing Hot Carrier Injection (HCI) programming, for the realized device, various magnitudes of gate voltage pulses demonstrated the ability to accurately control the charge levels stored in the QDG. This corresponds to multiple threshold voltage shifts allowing detection of multiple states during read operations.

Simulation of Stacked Quantum Dot Channels SWS-FET Using Multi-FET ABM Modeling

2019 ◽  
Vol 28 (03n04) ◽  
pp. 1940025
Author(s):  
H. Salama ◽  
B. Saman ◽  
R. H. Gudlavalleti ◽  
P-Y. Chan ◽  
R. Mays ◽  
...  
Keyword(s):  
Experimental Data ◽  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Simulation Models ◽  
Logic Gates ◽  
Behavior Model ◽  
Analog Behavior

This paper presents simulation of spatial wavefunction switched (SWS) field-effect transistors (FETs) comprising of two vertically stacked quantum dot channels. An analog behavior model (ABM) was used to compare the experimental I-V characteristics of a fabricated QD-SWS-FET. Each channel consists of two quantum dot layers and are connected to the dedicated drains D2 and D1, respectively. The fabricated SWS-FET has one source and one gate. The ABM simulation models SWS-FET comprising of two independent conventional BSIM FETs with their (W/L) ratios, capacitances and other device parameters. The agreement in simulation and experimental data will advance modeling of SWS based adders, logic gates and SRAMs.

Analytic Modeling of the of J–V Characteristics of Quantum Dot-Based Photovoltaic Cells

2019 ◽  
Vol 18 (03n04) ◽  
pp. 1940083
Author(s):  
A. Yu. Saunina ◽  
V. R. Nikitenko ◽  
A. A. Chistyakov ◽  
M. A. Zvaizgne ◽  
A. R. Tameev ◽  
...  
Keyword(s):  
Experimental Data ◽  
Solar Cells ◽  
Quantum Dot ◽  
Power Conversion Efficiency ◽  
Predictive Power ◽  
Diffusion Length ◽  
Power Conversion ◽  
Photovoltaic Cells ◽  
Analytic Model ◽  
Photovoltaic Devices

An analytic model of [Formula: see text]–[Formula: see text] characteristics of photovoltaic devices based on quantum dot (QD) solids is developed. The model yields the upper estimation of the power conversion efficiency and predicts its extremal dependence on the diffusion length of excitons. The predictive power of our model is approved by the comparison with the experimental data for PbS QD-based solar cells.

In-plane Thermal and Electronic Transport in Quantum Dot Superlattice

2001 ◽  
Vol 677 ◽  
Author(s):  
A. Khitun ◽  
J.L. Liu ◽  
K.L. Wang ◽  
G. Chen
Keyword(s):  
Experimental Data ◽  
Thermal Properties ◽  
Quantum Dot ◽  
Electronic Transport ◽  
Lattice Thermal Conductivity ◽  
Phonon Transport ◽  
Host Materials ◽  
Simulation Results ◽  
Germanium Quantum Dots ◽  
Good Agreement

ABSTRACTWe present a theoretical model in order to describe both thermal and electronic in-plane transports in quantum dot superlattice. The model takes into account the modifications of electron and phonon transport due to the space confinement caused by the mismatch in electronic and thermal properties between dot and host materials. The developed model provides the analysis of the in-plane superlattice electronic and thermal properties versus quantum dot size and their arrangement. Numerical calculations were carried out for a structure that consists of multiple layers of Si with regimented germanium quantum dots. The simulation results of the lattice thermal conductivity are in a good agreement with experimental data.

15 Gb/s Transmission with Wide-FSR Carrier Injection Ring Modulator for Tb/s Optical Links

2016 ◽  
Author(s):  
M. Ashkan Seyedi ◽  
Rui Wu ◽  
Chin-Hui Chen ◽  
Marco Fiorentino ◽  
Ray G. Beausoleil
Keyword(s):  
Carrier Injection ◽  
Optical Links ◽  
Ring Modulator

scholarly journals Efficiency of spin injection in novel InAs quantum dot structures: exciton vs. free carrier injection

2010 ◽  
Vol 245 ◽  
pp. 012044 ◽  
Author(s):  
J Beyer ◽  
I A Buyanova ◽  
S Suraprapapich ◽  
C W Tu ◽  
W M Chen
Keyword(s):  
Quantum Dot ◽  
Spin Injection ◽  
Free Carrier ◽  
Carrier Injection ◽  
Inas Quantum Dot
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