The Kinetics of Damage Removal Metastable Carrier Concentration Relaxation and Secondary Defect Evolution During RTA
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ABSTRACTThe kinetics of damage removal, metastable carrier concentration relaxation and secondary defect evolution in As+-implanted and rapidly annealed silicon was studied m detail. It was found that these processes are characterized by different activation energies. There is a critical temperature Tc for RTA. Only when the annealing temperature is higher than Tc, with suitable time duration can the RTA advantages be fully exloited.
1989 ◽
Vol 54
(5)
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pp. 1311-1317
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2021 ◽
Vol 21
(4)
◽
pp. 2563-2567
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2005 ◽
Vol 480-481
◽
pp. 197-200
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