Lateral confinement in generalized strip‐loaded optical waveguides

1990 ◽  
Vol 68 (10) ◽  
pp. 5375-5377 ◽  
Author(s):  
Michael Munowitz ◽  
David J. Vezzetti
1988 ◽  
Vol 126 ◽  
Author(s):  
B. L. Weiss ◽  
A. C. Wismayer

ABSTRACTThis paper is the first report of the use of Si+ implantation into GaAs/GaAlAs MQW material to form optical waveguides operating at a wavelength of 1.15μm. Lateral confinement is achieved by mixing of the MQW material which is produced by the implantation of Si+ and subsequent annealing at 750°C. The properties of these waveguides are compared with those of chemically etched rib waveguides and are shown to have reasonably low losses.


Author(s):  
W. E. Lee

An optical waveguide consists of a several-micron wide channel with a slightly different index of refraction than the host substrate; light can be trapped in the channel by total internal reflection.Optical waveguides can be formed from single-crystal LiNbO3 using the proton exhange technique. In this technique, polished specimens are masked with polycrystal1ine chromium in such a way as to leave 3-13 μm wide channels. These are held in benzoic acid at 249°C for 5 minutes allowing protons to exchange for lithium ions within the channels causing an increase in the refractive index of the channel and creating the waveguide. Unfortunately, optical measurements often reveal a loss in waveguiding ability up to several weeks after exchange.


1985 ◽  
Vol 132 (6) ◽  
pp. 314 ◽  
Author(s):  
J.M. Arnold ◽  
A. Belghoraf ◽  
A. Dendane

1975 ◽  
Vol 11 (22) ◽  
pp. 534
Author(s):  
Shojiro Kawakami ◽  
Shigeo Nishida
Keyword(s):  

1980 ◽  
Vol 16 (11) ◽  
pp. 440 ◽  
Author(s):  
D.N. MacFadyen ◽  
C.R. Stanley ◽  
C.D.W. Wilkinson
Keyword(s):  

Sign in / Sign up

Export Citation Format

Share Document